WO2009041256A1 - Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ - Google Patents

Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ Download PDF

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Publication number
WO2009041256A1
WO2009041256A1 PCT/JP2008/066261 JP2008066261W WO2009041256A1 WO 2009041256 A1 WO2009041256 A1 WO 2009041256A1 JP 2008066261 W JP2008066261 W JP 2008066261W WO 2009041256 A1 WO2009041256 A1 WO 2009041256A1
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Prior art keywords
group iii
iii nitride
nitride semiconductor
buffer layer
emitting device
Prior art date
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PCT/JP2008/066261
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English (en)
French (fr)
Inventor
Yasunori Yokoyama
Hisayuki Miki
Original Assignee
Showa Denko K.K.
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Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to US12/680,445 priority Critical patent/US20100219445A1/en
Priority to CN200880117594A priority patent/CN101874306A/zh
Priority to EP08833533.6A priority patent/EP2200099A4/en
Publication of WO2009041256A1 publication Critical patent/WO2009041256A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

 サファイアからなる基板１１上に、少なくともＩＩＩ族窒化物化合物からなるバッファ層１２が積層され、該バッファ層１２上に、ｎ型半導体層１４、発光層１５及びｐ型半導体層１６が順次積層されてなり、バッファ層１２は、反応性スパッタ法によって形成されるものであり、バッファ層１２が酸素を含有し、かつ、バッファ層１２中の酸素濃度が１原子％以下である。基板上に、反応性スパッタ法を用いてバッファ層を形成し、その上に結晶性の良好なＩＩＩ族窒化物半導体を成長させることができ、優れた発光特性を有するＩＩＩ族窒化物半導体発光素子及びその製造方法、並びにランプを提供する。
PCT/JP2008/066261 2007-09-27 2008-09-09 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ WO2009041256A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/680,445 US20100219445A1 (en) 2007-09-27 2008-09-09 Group iii nitride semiconductor light-emitting device, method for manufacturing the same, and lamp
CN200880117594A CN101874306A (zh) 2007-09-27 2008-09-09 Ⅲ族氮化物半导体发光元件及其制造方法以及灯
EP08833533.6A EP2200099A4 (en) 2007-09-27 2008-09-09 LIGHT-EMITTING GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-251478 2007-09-27
JP2007251478A JP2009081406A (ja) 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

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WO2009041256A1 true WO2009041256A1 (ja) 2009-04-02

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US (1) US20100219445A1 (ja)
EP (1) EP2200099A4 (ja)
JP (1) JP2009081406A (ja)
KR (1) KR20100049123A (ja)
CN (1) CN101874306A (ja)
TW (1) TW200933933A (ja)
WO (1) WO2009041256A1 (ja)

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CN102549203A (zh) * 2009-09-28 2012-07-04 株式会社德山 叠层体的制造方法
CN102597340A (zh) * 2009-11-10 2012-07-18 株式会社德山 叠层体的制造方法
CN106030834A (zh) * 2014-02-17 2016-10-12 欧司朗光电半导体有限公司 用于制造光电子半导体芯片的方法和光电子半导体芯片

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