CN105190932A - 用于薄膜封装的n2o稀释工艺对阻挡膜性能的改进 - Google Patents

用于薄膜封装的n2o稀释工艺对阻挡膜性能的改进 Download PDF

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Publication number
CN105190932A
CN105190932A CN201480014618.1A CN201480014618A CN105190932A CN 105190932 A CN105190932 A CN 105190932A CN 201480014618 A CN201480014618 A CN 201480014618A CN 105190932 A CN105190932 A CN 105190932A
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CN
China
Prior art keywords
layer
oled
inorganic
inorganic layer
substrate
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CN201480014618.1A
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English (en)
Chinese (zh)
Inventor
Y·J·崔
B·S·朴
崔寿永
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN105190932A publication Critical patent/CN105190932A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
CN201480014618.1A 2013-03-12 2014-03-10 用于薄膜封装的n2o稀释工艺对阻挡膜性能的改进 Pending CN105190932A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778067P 2013-03-12 2013-03-12
US61/778,067 2013-03-12
PCT/US2014/022498 WO2014164465A1 (en) 2013-03-12 2014-03-10 Improvement of barrier film performance with n2o dilution process for thin film encapsulation

Publications (1)

Publication Number Publication Date
CN105190932A true CN105190932A (zh) 2015-12-23

Family

ID=51523573

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480014618.1A Pending CN105190932A (zh) 2013-03-12 2014-03-10 用于薄膜封装的n2o稀释工艺对阻挡膜性能的改进

Country Status (6)

Country Link
US (1) US9269923B2 (enExample)
JP (1) JP6312791B2 (enExample)
KR (2) KR102057176B1 (enExample)
CN (1) CN105190932A (enExample)
TW (1) TWI578592B (enExample)
WO (1) WO2014164465A1 (enExample)

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WO2019144518A1 (zh) * 2018-01-24 2019-08-01 武汉华星光电半导体显示技术有限公司 Oled器件的薄膜封装方法及oled器件
CN113841263A (zh) * 2019-04-25 2021-12-24 应用材料公司 具有低折射率和低水蒸气穿透率的湿气阻挡膜
TWI772638B (zh) * 2018-04-26 2022-08-01 英商Ｓｐｔｓ科技公司 沉積SiN膜之方法
CN115623811A (zh) * 2022-11-10 2023-01-17 中山大学 一种柔性oled面板的封装方法及封装结构

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KR102364708B1 (ko) * 2017-07-12 2022-02-21 삼성디스플레이 주식회사 표시 장치의 제조 방법
US11038153B2 (en) * 2019-01-15 2021-06-15 Applied Materials, Inc. Methods for HMDSO thermal stability
CN113053941B (zh) * 2019-12-27 2025-05-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR102741002B1 (ko) 2020-04-29 2024-12-12 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
US11508590B2 (en) * 2021-04-15 2022-11-22 Jnk Tech Substrate inspection system and method of use thereof
US11987884B2 (en) 2021-04-15 2024-05-21 Jnk Tech Glass and wafer inspection system and a method of use thereof

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CN101649450A (zh) * 2004-06-25 2010-02-17 应用材料股份有限公司 包埋层水阻障性的改进
CN101810050A (zh) * 2008-09-26 2010-08-18 富士电机控股株式会社 有机el器件及其制造方法
US20120199872A1 (en) * 2011-02-08 2012-08-09 Applied Materials, Inc. Method for hybrid encapsulation of an organic light emitting diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019144518A1 (zh) * 2018-01-24 2019-08-01 武汉华星光电半导体显示技术有限公司 Oled器件的薄膜封装方法及oled器件
TWI772638B (zh) * 2018-04-26 2022-08-01 英商Ｓｐｔｓ科技公司 沉積SiN膜之方法
CN113841263A (zh) * 2019-04-25 2021-12-24 应用材料公司 具有低折射率和低水蒸气穿透率的湿气阻挡膜
CN113841263B (zh) * 2019-04-25 2024-04-26 应用材料公司 具有低折射率和低水蒸气穿透率的湿气阻挡膜
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CN115623811A (zh) * 2022-11-10 2023-01-17 中山大学 一种柔性oled面板的封装方法及封装结构

Also Published As

Publication number Publication date
JP2016512651A (ja) 2016-04-28
KR102057176B1 (ko) 2019-12-18
US9269923B2 (en) 2016-02-23
TWI578592B (zh) 2017-04-11
TW201503444A (zh) 2015-01-16
KR20150131098A (ko) 2015-11-24
WO2014164465A1 (en) 2014-10-09
KR20170126519A (ko) 2017-11-17
JP6312791B2 (ja) 2018-04-18
US20140264296A1 (en) 2014-09-18

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