KR102057176B1 - 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선 - Google Patents

박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선 Download PDF

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KR102057176B1
KR102057176B1 KR1020177032410A KR20177032410A KR102057176B1 KR 102057176 B1 KR102057176 B1 KR 102057176B1 KR 1020177032410 A KR1020177032410 A KR 1020177032410A KR 20177032410 A KR20177032410 A KR 20177032410A KR 102057176 B1 KR102057176 B1 KR 102057176B1
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layer
inorganic
oled device
oled
oxygen
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KR20170126519A (ko
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영진 최
범수 박
수영 최
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H01L51/5253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H01L51/0002—
    • H01L51/5237—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020177032410A 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선 Active KR102057176B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778067P 2013-03-12 2013-03-12
US61/778,067 2013-03-12
PCT/US2014/022498 WO2014164465A1 (en) 2013-03-12 2014-03-10 Improvement of barrier film performance with n2o dilution process for thin film encapsulation

Related Parent Applications (1)

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KR1020157027762A Division KR20150131098A (ko) 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선

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KR20170126519A KR20170126519A (ko) 2017-11-17
KR102057176B1 true KR102057176B1 (ko) 2019-12-18

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KR1020177032410A Active KR102057176B1 (ko) 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선
KR1020157027762A Ceased KR20150131098A (ko) 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선

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US (1) US9269923B2 (enExample)
JP (1) JP6312791B2 (enExample)
KR (2) KR102057176B1 (enExample)
CN (1) CN105190932A (enExample)
TW (1) TWI578592B (enExample)
WO (1) WO2014164465A1 (enExample)

Cited By (1)

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US11690251B2 (en) 2020-04-29 2023-06-27 Samsung Display Co., Ltd. Organic light-emitting display device having a gate insulating layer with controlled dielectric constants and method of manufacturing the same

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CN108305954B (zh) * 2018-01-24 2020-07-31 武汉华星光电半导体显示技术有限公司 Oled器件的薄膜封装方法及oled器件
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KR102766447B1 (ko) 2019-04-25 2025-02-10 어플라이드 머티어리얼스, 인코포레이티드 낮은 굴절률 및 낮은 수증기 투과율을 갖는 수분 배리어 막
CN113053941B (zh) * 2019-12-27 2025-05-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
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US12389679B2 (en) 2020-04-29 2025-08-12 Samsung Display Co., Ltd. Organic light-emitting display device having a gate insulating with controlled number of oxygen atoms

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Publication number Publication date
KR20170126519A (ko) 2017-11-17
JP2016512651A (ja) 2016-04-28
JP6312791B2 (ja) 2018-04-18
KR20150131098A (ko) 2015-11-24
TWI578592B (zh) 2017-04-11
US20140264296A1 (en) 2014-09-18
US9269923B2 (en) 2016-02-23
TW201503444A (zh) 2015-01-16
CN105190932A (zh) 2015-12-23
WO2014164465A1 (en) 2014-10-09

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