KR20150131098A - 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선 - Google Patents

박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선 Download PDF

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Publication number
KR20150131098A
KR20150131098A KR1020157027762A KR20157027762A KR20150131098A KR 20150131098 A KR20150131098 A KR 20150131098A KR 1020157027762 A KR1020157027762 A KR 1020157027762A KR 20157027762 A KR20157027762 A KR 20157027762A KR 20150131098 A KR20150131098 A KR 20150131098A
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layer
inorganic
oled
substrate
layers
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English (en)
Korean (ko)
Inventor
영진 최
범수 박
수영 최
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L51/5253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H01L51/0002—
    • H01L51/5237—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020157027762A 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선 Ceased KR20150131098A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778067P 2013-03-12 2013-03-12
US61/778,067 2013-03-12
PCT/US2014/022498 WO2014164465A1 (en) 2013-03-12 2014-03-10 Improvement of barrier film performance with n2o dilution process for thin film encapsulation

Related Child Applications (1)

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KR1020177032410A Division KR102057176B1 (ko) 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선

Publications (1)

Publication Number Publication Date
KR20150131098A true KR20150131098A (ko) 2015-11-24

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KR1020157027762A Ceased KR20150131098A (ko) 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선
KR1020177032410A Active KR102057176B1 (ko) 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선

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KR1020177032410A Active KR102057176B1 (ko) 2013-03-12 2014-03-10 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선

Country Status (6)

Country Link
US (1) US9269923B2 (enExample)
JP (1) JP6312791B2 (enExample)
KR (2) KR20150131098A (enExample)
CN (1) CN105190932A (enExample)
TW (1) TWI578592B (enExample)
WO (1) WO2014164465A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210102992A (ko) * 2019-01-15 2021-08-20 어플라이드 머티어리얼스, 인코포레이티드 Hmdso 열적 안정성을 위한 방법들

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KR102364708B1 (ko) * 2017-07-12 2022-02-21 삼성디스플레이 주식회사 표시 장치의 제조 방법
CN108305954B (zh) * 2018-01-24 2020-07-31 武汉华星光电半导体显示技术有限公司 Oled器件的薄膜封装方法及oled器件
GB201806865D0 (en) 2018-04-26 2018-06-13 Spts Technologies Ltd Method of depositing a SiN film
KR102766447B1 (ko) * 2019-04-25 2025-02-10 어플라이드 머티어리얼스, 인코포레이티드 낮은 굴절률 및 낮은 수증기 투과율을 갖는 수분 배리어 막
CN113053941B (zh) * 2019-12-27 2025-05-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR102741002B1 (ko) 2020-04-29 2024-12-12 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
US11508590B2 (en) 2021-04-15 2022-11-22 Jnk Tech Substrate inspection system and method of use thereof
US11987884B2 (en) 2021-04-15 2024-05-21 Jnk Tech Glass and wafer inspection system and a method of use thereof
CN115623811A (zh) * 2022-11-10 2023-01-17 中山大学 一种柔性oled面板的封装方法及封装结构

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Also Published As

Publication number Publication date
TW201503444A (zh) 2015-01-16
JP6312791B2 (ja) 2018-04-18
US9269923B2 (en) 2016-02-23
US20140264296A1 (en) 2014-09-18
JP2016512651A (ja) 2016-04-28
KR20170126519A (ko) 2017-11-17
WO2014164465A1 (en) 2014-10-09
CN105190932A (zh) 2015-12-23
TWI578592B (zh) 2017-04-11
KR102057176B1 (ko) 2019-12-18

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