JP2005150710A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005150710A5 JP2005150710A5 JP2004306331A JP2004306331A JP2005150710A5 JP 2005150710 A5 JP2005150710 A5 JP 2005150710A5 JP 2004306331 A JP2004306331 A JP 2004306331A JP 2004306331 A JP2004306331 A JP 2004306331A JP 2005150710 A5 JP2005150710 A5 JP 2005150710A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- oxygen
- manufacturing
- semiconductor element
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 16
- 239000001301 oxygen Substances 0.000 claims 16
- 229910052760 oxygen Inorganic materials 0.000 claims 16
- 238000000034 method Methods 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000004020 conductor Substances 0.000 claims 10
- 238000007599 discharging Methods 0.000 claims 9
- 238000010438 heat treatment Methods 0.000 claims 9
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 238000005498 polishing Methods 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 3
- 150000002894 organic compounds Chemical class 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004306331A JP4932150B2 (ja) | 2003-10-21 | 2004-10-21 | 半導体素子の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003361262 | 2003-10-21 | ||
| JP2003361262 | 2003-10-21 | ||
| JP2004306331A JP4932150B2 (ja) | 2003-10-21 | 2004-10-21 | 半導体素子の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005150710A JP2005150710A (ja) | 2005-06-09 |
| JP2005150710A5 true JP2005150710A5 (enExample) | 2007-11-29 |
| JP4932150B2 JP4932150B2 (ja) | 2012-05-16 |
Family
ID=34703076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004306331A Expired - Fee Related JP4932150B2 (ja) | 2003-10-21 | 2004-10-21 | 半導体素子の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4932150B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4732118B2 (ja) * | 2005-10-18 | 2011-07-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2007134481A (ja) * | 2005-11-10 | 2007-05-31 | Sony Corp | 半導体装置の製造方法 |
| KR101251995B1 (ko) | 2006-01-27 | 2013-04-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP4950532B2 (ja) * | 2006-03-20 | 2012-06-13 | 株式会社日本マイクロニクス | 回路基板の配線補修方法およびその装置 |
| JP4738299B2 (ja) | 2006-09-20 | 2011-08-03 | 富士通株式会社 | キャパシタ、その製造方法、および電子基板 |
| WO2008084736A1 (ja) * | 2007-01-09 | 2008-07-17 | Konica Minolta Holdings, Inc. | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
| US20090023235A1 (en) * | 2007-07-19 | 2009-01-22 | Mackenzie John D | Method and Apparatus for Improved Printed Cathodes for Light-Emitting Devices |
| JP5697309B2 (ja) * | 2009-03-06 | 2015-04-08 | 地方独立行政法人東京都立産業技術研究センター | 局在プラズモン共鳴センサの製造方法 |
| WO2014178639A1 (ko) | 2013-04-30 | 2014-11-06 | 주식회사 아모그린텍 | 연성인쇄회로기판 및 그 제조 방법 |
| JP5753568B2 (ja) * | 2013-11-20 | 2015-07-22 | 地方独立行政法人東京都立産業技術研究センター | 局在プラズモン共鳴センサ及びその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3690552B2 (ja) * | 1997-05-02 | 2005-08-31 | 株式会社アルバック | 金属ペーストの焼成方法 |
| JP3926076B2 (ja) * | 1999-12-24 | 2007-06-06 | 日本電気株式会社 | 薄膜パターン形成方法 |
| EP1441864B1 (en) * | 2000-01-21 | 2009-11-18 | Midwest Research Institute | Method for forming thin-film conductors through the decomposition of metal-chelates in association with metal particles |
| JP2002224604A (ja) * | 2001-01-31 | 2002-08-13 | Hitachi Ltd | パターン転写装置,パターン転写方法および転写用原版の製造方法 |
| JP2002339076A (ja) * | 2001-05-16 | 2002-11-27 | Jsr Corp | 金属銅薄膜の形成方法および銅薄膜形成用組成物 |
| JP2003080694A (ja) * | 2001-06-26 | 2003-03-19 | Seiko Epson Corp | 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体 |
| JP2003273111A (ja) * | 2002-03-14 | 2003-09-26 | Seiko Epson Corp | 成膜方法及びその方法を用いて製造したデバイス、並びにデバイスの製造方法 |
-
2004
- 2004-10-21 JP JP2004306331A patent/JP4932150B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI590444B (zh) | 包含具不同厚度的過渡金屬二硫族化物層的裝置和製造方法 | |
| JP2007529112A5 (enExample) | ||
| JP2000269213A5 (enExample) | ||
| JP2008288227A5 (enExample) | ||
| JP2001015612A5 (enExample) | ||
| JP2005150710A5 (enExample) | ||
| JP2020102623A5 (ja) | 半導体装置 | |
| TW201249903A (en) | Method for increasing adhesion between polysilazane and silicon nitride and method for forming a trench isolation | |
| JP2006054425A5 (enExample) | ||
| JP2010045204A (ja) | 半導体基板、半導体装置およびその製造方法 | |
| JP2007134598A5 (enExample) | ||
| US6376377B1 (en) | Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity | |
| JP2004079606A5 (enExample) | ||
| JP2004014828A5 (enExample) | ||
| JP4700652B2 (ja) | 層構造の製造方法 | |
| US20220223472A1 (en) | Ruthenium Reflow For Via Fill | |
| JP6040544B2 (ja) | 銅配線の表面処理方法及びその上に搭載する機能素子の製造方法 | |
| TW567546B (en) | Etch-back method for dielectric layer | |
| JP2010027869A (ja) | 薄膜トランジスタ及びその製造方法並びに導電性パターン及びその形成方法 | |
| TW201232768A (en) | Method of manufacturing semiconductor device and the semiconductor device | |
| JPH08306787A (ja) | 半導体装置及び半導体装置の製造方法 | |
| CN104167405A (zh) | 一种集成电路及其制备方法 | |
| TWI272677B (en) | Method for preventing Cu contamination and oxidation in semiconductor device manufacturing | |
| JP2005352465A5 (enExample) | ||
| JP2003060082A5 (enExample) |