JP4932150B2 - 半導体素子の作製方法 - Google Patents

半導体素子の作製方法 Download PDF

Info

Publication number
JP4932150B2
JP4932150B2 JP2004306331A JP2004306331A JP4932150B2 JP 4932150 B2 JP4932150 B2 JP 4932150B2 JP 2004306331 A JP2004306331 A JP 2004306331A JP 2004306331 A JP2004306331 A JP 2004306331A JP 4932150 B2 JP4932150 B2 JP 4932150B2
Authority
JP
Japan
Prior art keywords
film
conductive film
semiconductor
conductive
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004306331A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005150710A5 (enExample
JP2005150710A (ja
Inventor
厳 藤井
慎志 前川
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004306331A priority Critical patent/JP4932150B2/ja
Publication of JP2005150710A publication Critical patent/JP2005150710A/ja
Publication of JP2005150710A5 publication Critical patent/JP2005150710A5/ja
Application granted granted Critical
Publication of JP4932150B2 publication Critical patent/JP4932150B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004306331A 2003-10-21 2004-10-21 半導体素子の作製方法 Expired - Fee Related JP4932150B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004306331A JP4932150B2 (ja) 2003-10-21 2004-10-21 半導体素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003361262 2003-10-21
JP2003361262 2003-10-21
JP2004306331A JP4932150B2 (ja) 2003-10-21 2004-10-21 半導体素子の作製方法

Publications (3)

Publication Number Publication Date
JP2005150710A JP2005150710A (ja) 2005-06-09
JP2005150710A5 JP2005150710A5 (enExample) 2007-11-29
JP4932150B2 true JP4932150B2 (ja) 2012-05-16

Family

ID=34703076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004306331A Expired - Fee Related JP4932150B2 (ja) 2003-10-21 2004-10-21 半導体素子の作製方法

Country Status (1)

Country Link
JP (1) JP4932150B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4732118B2 (ja) * 2005-10-18 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007134481A (ja) * 2005-11-10 2007-05-31 Sony Corp 半導体装置の製造方法
KR101251995B1 (ko) 2006-01-27 2013-04-08 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP4950532B2 (ja) * 2006-03-20 2012-06-13 株式会社日本マイクロニクス 回路基板の配線補修方法およびその装置
JP4738299B2 (ja) 2006-09-20 2011-08-03 富士通株式会社 キャパシタ、その製造方法、および電子基板
WO2008084736A1 (ja) * 2007-01-09 2008-07-17 Konica Minolta Holdings, Inc. 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法
US20090023235A1 (en) * 2007-07-19 2009-01-22 Mackenzie John D Method and Apparatus for Improved Printed Cathodes for Light-Emitting Devices
JP5697309B2 (ja) * 2009-03-06 2015-04-08 地方独立行政法人東京都立産業技術研究センター 局在プラズモン共鳴センサの製造方法
CN105265029B (zh) 2013-04-30 2018-02-02 阿莫绿色技术有限公司 柔性印刷电路板及其制造方法
JP5753568B2 (ja) * 2013-11-20 2015-07-22 地方独立行政法人東京都立産業技術研究センター 局在プラズモン共鳴センサ及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3690552B2 (ja) * 1997-05-02 2005-08-31 株式会社アルバック 金属ペーストの焼成方法
JP3926076B2 (ja) * 1999-12-24 2007-06-06 日本電気株式会社 薄膜パターン形成方法
AU2000225122A1 (en) * 2000-01-21 2001-07-31 Midwest Research Institute Method for forming thin-film conductors through the decomposition of metal-chelates in association with metal particles
JP2002224604A (ja) * 2001-01-31 2002-08-13 Hitachi Ltd パターン転写装置，パターン転写方法および転写用原版の製造方法
JP2002339076A (ja) * 2001-05-16 2002-11-27 Jsr Corp 金属銅薄膜の形成方法および銅薄膜形成用組成物
JP2003080694A (ja) * 2001-06-26 2003-03-19 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP2003273111A (ja) * 2002-03-14 2003-09-26 Seiko Epson Corp 成膜方法及びその方法を用いて製造したデバイス、並びにデバイスの製造方法

Also Published As

Publication number Publication date
JP2005150710A (ja) 2005-06-09

Similar Documents

Publication Publication Date Title
JP4689159B2 (ja) 液滴吐出システム
CN1599523B (zh) 显示器件及其制造方法
JP4906142B2 (ja) 発光装置
CN100499035C (zh) 半导体器件的制造方法
CN101834201B (zh) 显示器件及其制作方法
JP4667012B2 (ja) 半導体素子及び液晶表示装置の作製方法
US8247965B2 (en) Light emitting display device and method for manufacturing the same
JP4801347B2 (ja) 表示装置
JP4704006B2 (ja) 表示装置及びその作製方法、並びに電子機器
JP4932150B2 (ja) 半導体素子の作製方法
JP4667051B2 (ja) 半導体装置の作製方法
JP4754795B2 (ja) 表示装置及び表示装置の作製方法
US7439111B2 (en) Semiconductor device and manufacturing method thereof
JP4889933B2 (ja) 半導体素子の作製方法
JP4583797B2 (ja) 半導体装置の作製方法
JP4785339B2 (ja) 表示装置の作製方法
JP4712352B2 (ja) 発光装置の作製方法
JP4963156B2 (ja) 半導体装置の作製方法
JP4877868B2 (ja) 表示装置の作製方法
JP4574295B2 (ja) 発光装置の作製方法
JP4712332B2 (ja) 薄膜トランジスタの作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071016

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071016

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110607

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110622

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111004

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20111012

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111115

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120214

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120215

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150224

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150224

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees