JP4963156B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP4963156B2 JP4963156B2 JP2004286632A JP2004286632A JP4963156B2 JP 4963156 B2 JP4963156 B2 JP 4963156B2 JP 2004286632 A JP2004286632 A JP 2004286632A JP 2004286632 A JP2004286632 A JP 2004286632A JP 4963156 B2 JP4963156 B2 JP 4963156B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- etching
- gas
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 208
- 238000000034 method Methods 0.000 title claims description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000000463 material Substances 0.000 claims description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 43
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 42
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052786 argon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- 238000000576 coating method Methods 0.000 claims description 33
- 229910052743 krypton Inorganic materials 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 26
- 125000000217 alkyl group Chemical group 0.000 claims description 19
- 229910052724 xenon Inorganic materials 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical group [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 description 543
- 238000005530 etching Methods 0.000 description 163
- 239000010410 layer Substances 0.000 description 153
- 239000007789 gas Substances 0.000 description 104
- 239000000758 substrate Substances 0.000 description 66
- 239000011261 inert gas Substances 0.000 description 49
- 239000011229 interlayer Substances 0.000 description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 33
- 239000001301 oxygen Substances 0.000 description 33
- 229910052760 oxygen Inorganic materials 0.000 description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 239000012535 impurity Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 30
- 239000010936 titanium Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- 230000006870 function Effects 0.000 description 19
- 229910052718 tin Inorganic materials 0.000 description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 18
- 239000010409 thin film Substances 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 17
- 239000001257 hydrogen Substances 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 239000000956 alloy Substances 0.000 description 16
- 229910052734 helium Inorganic materials 0.000 description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 238000005192 partition Methods 0.000 description 14
- 238000002161 passivation Methods 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 12
- 239000000945 filler Substances 0.000 description 12
- 238000009616 inductively coupled plasma Methods 0.000 description 12
- 238000007789 sealing Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 239000012212 insulator Substances 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- 239000003566 sealing material Substances 0.000 description 10
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 9
- 229910052754 neon Inorganic materials 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 150000002894 organic compounds Chemical class 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 125000001424 substituent group Chemical group 0.000 description 7
- 229910017073 AlLi Inorganic materials 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 229910017911 MgIn Inorganic materials 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 229910052744 lithium Inorganic materials 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 239000000565 sealant Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910004261 CaF 2 Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229910007991 Si-N Inorganic materials 0.000 description 4
- 229910006294 Si—N Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 238000005499 laser crystallization Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical class C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910015711 MoOx Inorganic materials 0.000 description 1
- 229910019794 NbN Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- IZMLNVKXKFSCDB-UHFFFAOYSA-N oxoindium;oxotin Chemical compound [In]=O.[Sn]=O IZMLNVKXKFSCDB-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Description
リウェット塗布を行う。シンナーを70ml滴下しながら基板をスピン(回転数100rpm)させてシンナーを遠心力で万遍なく広げた後、高速度でスピン(回転数450rpm)させてシンナーを振り切る。
Claims (6)
- 第1の絶縁膜を形成し、
前記第1の絶縁膜の上に第2の絶縁膜を形成し、
前記第2の絶縁膜の上に塗布材料液を塗布し塗布膜を形成し、
前記塗布膜を焼成することで第3の絶縁膜を形成し、
前記第3の絶縁膜の上に第4の絶縁膜を形成し、
第1の気体を用いて、前記第2乃至第4の絶縁膜を選択的に除去し、前記第1の絶縁膜に達する開口部を形成し、
第2の気体を用いて、前記開口部の前記第1の絶縁膜を選択的に除去し、コンタクトホールを形成する半導体装置の作製方法であって、
前記第1の絶縁膜は、酸化珪素膜または酸化窒化珪素膜であり、
前記第2の絶縁膜は、窒化珪素膜または窒化酸化珪素膜であり、
前記第3の絶縁膜は、アルキル基を含む酸化珪素膜であり、
前記第4の絶縁膜は、窒化珪素膜または窒化酸化珪素膜であり、
前記第1の気体は、CF4、O2及びHeを含み、Ar、Kr及びXeを含まず、
前記第2の気体は、Ar、KrまたはXeから選ばれた一種または複数種及びCHF3からなることを特徴とする半導体装置の作製方法。 - 請求項1において、
前記Ar、KrまたはXeから選ばれた一種または複数種の流量が前記第2の気体の総流量に対して60%以上85%以下であることを特徴とする半導体装置の作製方法。 - 第1の絶縁膜を形成し、
前記第1の絶縁膜の上に第2の絶縁膜を形成し、
前記第2の絶縁膜の上に塗布材料液を塗布し塗布膜を形成し、
前記塗布膜を焼成することで第3の絶縁膜を形成し、
前記第3の絶縁膜の上に第4の絶縁膜を形成し、
第1の気体を用いて、前記第2乃至第4の絶縁膜を選択的に除去し、前記第1の絶縁膜に達する開口部を形成し、
第2の気体を用いて、前記開口部の前記第1の絶縁膜を選択的に除去し、コンタクトホールを形成する半導体装置の作製方法であって、
前記第1の絶縁膜は、酸化珪素膜または酸化窒化珪素膜であり、
前記第2の絶縁膜は、窒化珪素膜または窒化酸化珪素膜であり、
前記第3の絶縁膜は、アルキル基を含む酸化珪素膜であり、
前記第4の絶縁膜は、窒化珪素膜または窒化酸化珪素膜であり、
前記第1の気体は、Ar、KrまたはXeから選ばれた一種または複数種、CF4、O2及びHeからなり、
前記第2の気体は、CHF3を含み、Ar、Kr及びXeを含まないことを特徴とする半導体装置の作製方法。 - 請求項3において、
前記Ar、KrまたはXeから選ばれた一種または複数種の流量が前記第1の気体の総流量に対して26%以上50%以下であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一において、
前記第1の絶縁膜は半導体膜に接するように形成されているゲート絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項5のいずれか一において、
前記アルキル基を含む酸化珪素膜は、シロキサン系有機樹脂膜であることを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004286632A JP4963156B2 (ja) | 2003-10-03 | 2004-09-30 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003345457 | 2003-10-03 | ||
JP2003345457 | 2003-10-03 | ||
JP2004286632A JP4963156B2 (ja) | 2003-10-03 | 2004-09-30 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005129920A JP2005129920A (ja) | 2005-05-19 |
JP2005129920A5 JP2005129920A5 (ja) | 2007-10-11 |
JP4963156B2 true JP4963156B2 (ja) | 2012-06-27 |
Family
ID=34655854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004286632A Expired - Fee Related JP4963156B2 (ja) | 2003-10-03 | 2004-09-30 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4963156B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4597790B2 (ja) * | 2005-06-24 | 2010-12-15 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法、並びに電子機器 |
KR101600887B1 (ko) * | 2009-07-06 | 2016-03-09 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
JP5275415B2 (ja) * | 2011-06-20 | 2013-08-28 | シャープ株式会社 | 結晶太陽電池セルおよび結晶太陽電池セルの製造方法 |
JP5677404B2 (ja) * | 2012-12-07 | 2015-02-25 | シャープ株式会社 | 結晶太陽電池セル |
WO2014155691A1 (ja) * | 2013-03-29 | 2014-10-02 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
JP6517535B2 (ja) * | 2015-02-25 | 2019-05-22 | エルジー ディスプレイ カンパニー リミテッド | シリコン系薄膜半導体装置、およびシリコン系薄膜半導体装置の製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2545450B2 (ja) * | 1988-10-24 | 1996-10-16 | 富士通株式会社 | 半導体装置の製造方法 |
JPH0637069A (ja) * | 1992-07-17 | 1994-02-10 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JP2950110B2 (ja) * | 1993-09-24 | 1999-09-20 | 住友金属工業株式会社 | プラズマエッチング方法 |
JPH09252001A (ja) * | 1996-03-18 | 1997-09-22 | Nkk Corp | 半導体装置に用いられる配線層およびその製造方法、ならびにそのような配線層を用いた半導体装置の製造方法 |
JPH10284299A (ja) * | 1997-04-02 | 1998-10-23 | Applied Materials Inc | 高周波導入部材及びプラズマ装置 |
JP2001168098A (ja) * | 1999-12-10 | 2001-06-22 | Seiko Epson Corp | 半導体装置及びパターンデータ作成方法 |
JP4132556B2 (ja) * | 2000-03-22 | 2008-08-13 | 三菱電機株式会社 | 液晶表示装置および液晶表示装置の製造方法 |
JP2002164342A (ja) * | 2000-07-21 | 2002-06-07 | Canon Sales Co Inc | 半導体装置及びその製造方法 |
WO2002049089A1 (fr) * | 2000-12-14 | 2002-06-20 | Tokyo Electron Limited | Methode de gravure d'un film isolant poreux, procede de double damasquinage, dispositif a semi-conducteur |
JP3504247B2 (ja) * | 2000-12-15 | 2004-03-08 | 株式会社東芝 | 半導体装置の製造方法 |
US20040035826A1 (en) * | 2000-12-21 | 2004-02-26 | Kenji Adachi | Etching method for insulating film |
JP2002289594A (ja) * | 2001-03-28 | 2002-10-04 | Nec Corp | 半導体装置およびその製造方法 |
JP2002057122A (ja) * | 2001-06-12 | 2002-02-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP4969001B2 (ja) * | 2001-09-20 | 2012-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
JP4104426B2 (ja) * | 2002-10-30 | 2008-06-18 | 富士通株式会社 | 半導体装置の製造方法 |
JP2004172456A (ja) * | 2002-11-21 | 2004-06-17 | Seiko Epson Corp | 半導体装置の製造方法 |
-
2004
- 2004-09-30 JP JP2004286632A patent/JP4963156B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005129920A (ja) | 2005-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7579270B2 (en) | Method for manufacturing a semiconductor device | |
US8362693B2 (en) | Display device and manufacturing method of display device | |
JP4823478B2 (ja) | 発光装置の作製方法 | |
US7718463B2 (en) | Display device and manufacturing method thereof | |
JP2021131560A (ja) | 表示装置 | |
JP4338934B2 (ja) | 配線の作製方法 | |
US20050122351A1 (en) | Liquid droplet ejection system and control program of ejection condition of compositions | |
JP4704006B2 (ja) | 表示装置及びその作製方法、並びに電子機器 | |
JP4801347B2 (ja) | 表示装置 | |
US7459379B2 (en) | Method for manufacturing semiconductor device | |
JP4391126B2 (ja) | 発光装置の作製方法 | |
US7825021B2 (en) | Method for manufacturing display device | |
JP4754795B2 (ja) | 表示装置及び表示装置の作製方法 | |
JP2004094236A (ja) | 半導体装置 | |
JP4884674B2 (ja) | 表示装置の作製方法 | |
JP5008288B2 (ja) | 半導体装置の作製方法 | |
JP4785339B2 (ja) | 表示装置の作製方法 | |
JP4963156B2 (ja) | 半導体装置の作製方法 | |
JP4932150B2 (ja) | 半導体素子の作製方法 | |
JP4583797B2 (ja) | 半導体装置の作製方法 | |
JP2005108825A (ja) | 発光装置およびその作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070828 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070828 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091102 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120321 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120322 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4963156 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150406 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150406 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |