JP4932150B2 - 半導体素子の作製方法 - Google Patents
半導体素子の作製方法 Download PDFInfo
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- JP4932150B2 JP4932150B2 JP2004306331A JP2004306331A JP4932150B2 JP 4932150 B2 JP4932150 B2 JP 4932150B2 JP 2004306331 A JP2004306331 A JP 2004306331A JP 2004306331 A JP2004306331 A JP 2004306331A JP 4932150 B2 JP4932150 B2 JP 4932150B2
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- film
- conductive film
- semiconductor
- conductive
- electrode
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical group 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Description
図1及び図2を参照して、本発明を逆スタガ型(ボトムゲート型)TFTのうち、特にチャネル保護型(チャネルストッパー型)TFTの作製に適用した場合について説明する。
図7、図8を参照して、本発明を順スタガ型TFTの作製に適用した場合について説明する。
スク、半導体領域形成用マスク、配線形成用マスク、コンタクトホール形成用マスク、陽
極形成用マスクの合計5枚のマスクで形成することができる。
素部を同じ基板上に形成した例について説明したが、本発明はこの構成に限定されない。
アモルファス半導体を用いたTFTで画素部を形成し、該画素部が形成された基板に別途
形成された駆動回路を貼り付けても良い。
115、502、134: ソース電極
116、503、135: ドレイン電極
101、501、520、521、522、128、602: 液滴吐出ノズル
143、1201、1202: チャネル保護膜
618: 画素電極
1118、1622: 正孔注入電極(陽極)
1624:電子注入電極(陰極)
1122: 発光素子
Claims (8)
- 導電材料を含む組成物を吐出することにより導電膜を形成し、
前記導電膜に対して窒素及び酸素からなり、かつ、前記酸素の組成比は10%〜25%(10%を除く)である雰囲気下において加熱処理を行い、
前記導電膜の表面を研磨することを特徴とする半導体素子の作製方法。 - 導電材料を含む組成物を吐出することにより導電膜を形成し、
前記導電膜に対して窒素及び酸素からなり、かつ、前記酸素の組成比は10%〜25%(10%を除く)である雰囲気下において加熱処理を行い、
前記導電膜の表面を研磨し、
前記導電膜上に、絶縁膜を形成することを特徴とする半導体素子の作製方法。 - 導電材料を含む組成物を吐出することにより導電膜を形成し、
前記導電膜に対して窒素及び酸素からなり、かつ、前記酸素の組成比は10%〜25%(10%を除く)である雰囲気下において加熱処理を行い、
前記導電膜の表面を研磨し、
前記導電膜上に、有機化合物を含む層を形成することを特徴とする半導体素子の作製方法。 - 請求項2において、
前記絶縁膜は、窒化珪素を含むことを特徴とする半導体素子の作製方法。 - 請求項1乃至3のいずれか一項において、
前記研磨は、CMP(化学的機械的研磨)法によって行われることを特徴とする半導体素子の作製方法。 - 請求項1乃至5のいずれか一項において、
前記導電材料は、Agであることを特徴とする半導体素子の作製方法。 - 請求項1乃至6のいずれか一項において、
基板上にTiを含む薄膜を形成し、
前記Tiを含む薄膜上に前記導電材料を含む組成物を吐出することにより前記導電膜を形成することを特徴とする半導体素子の作製方法。 - 請求項7において、
前記加熱処理を行うことにより、前記Tiを含む薄膜をTiO2とすることを特徴とする半導体素子の作製方法。
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JP2007134481A (ja) * | 2005-11-10 | 2007-05-31 | Sony Corp | 半導体装置の製造方法 |
KR101251995B1 (ko) | 2006-01-27 | 2013-04-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
JP4950532B2 (ja) * | 2006-03-20 | 2012-06-13 | 株式会社日本マイクロニクス | 回路基板の配線補修方法およびその装置 |
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US20090023235A1 (en) * | 2007-07-19 | 2009-01-22 | Mackenzie John D | Method and Apparatus for Improved Printed Cathodes for Light-Emitting Devices |
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