JP2001015612A5 - - Google Patents

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Publication number
JP2001015612A5
JP2001015612A5 JP1999225991A JP22599199A JP2001015612A5 JP 2001015612 A5 JP2001015612 A5 JP 2001015612A5 JP 1999225991 A JP1999225991 A JP 1999225991A JP 22599199 A JP22599199 A JP 22599199A JP 2001015612 A5 JP2001015612 A5 JP 2001015612A5
Authority
JP
Japan
Prior art keywords
insulating film
circuit device
integrated circuit
manufacturing
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999225991A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001015612A (ja
JP4149095B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP22599199A priority Critical patent/JP4149095B2/ja
Priority claimed from JP22599199A external-priority patent/JP4149095B2/ja
Priority to US09/536,756 priority patent/US6713353B1/en
Priority to KR1020000022126A priority patent/KR20010020781A/ko
Publication of JP2001015612A publication Critical patent/JP2001015612A/ja
Priority to US10/211,262 priority patent/US6821854B2/en
Publication of JP2001015612A5 publication Critical patent/JP2001015612A5/ja
Application granted granted Critical
Publication of JP4149095B2 publication Critical patent/JP4149095B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP22599199A 1999-04-26 1999-08-10 半導体集積回路装置の製造方法 Expired - Fee Related JP4149095B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP22599199A JP4149095B2 (ja) 1999-04-26 1999-08-10 半導体集積回路装置の製造方法
US09/536,756 US6713353B1 (en) 1999-04-26 2000-03-28 Method of manufacturing a semiconductor integrated circuit device
KR1020000022126A KR20010020781A (ko) 1999-04-26 2000-04-26 반도체 집적 회로 장치의 제조 방법
US10/211,262 US6821854B2 (en) 1999-04-26 2002-08-05 Method of manufacturing a semiconductor integrated circuit device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-117815 1999-04-26
JP11781599 1999-04-26
JP22599199A JP4149095B2 (ja) 1999-04-26 1999-08-10 半導体集積回路装置の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008121272A Division JP2008277836A (ja) 1999-04-26 2008-05-07 半導体集積回路装置
JP2008121271A Division JP4951585B2 (ja) 1999-04-26 2008-05-07 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2001015612A JP2001015612A (ja) 2001-01-19
JP2001015612A5 true JP2001015612A5 (enExample) 2004-10-28
JP4149095B2 JP4149095B2 (ja) 2008-09-10

Family

ID=26455865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22599199A Expired - Fee Related JP4149095B2 (ja) 1999-04-26 1999-08-10 半導体集積回路装置の製造方法

Country Status (3)

Country Link
US (2) US6713353B1 (enExample)
JP (1) JP4149095B2 (enExample)
KR (1) KR20010020781A (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4951585B2 (ja) * 1999-04-26 2012-06-13 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US6368986B1 (en) * 2000-08-31 2002-04-09 Micron Technology, Inc. Use of selective ozone TEOS oxide to create variable thickness layers and spacers
US6503851B2 (en) * 2000-08-31 2003-01-07 Micron Technology, Inc. Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
JP3746968B2 (ja) * 2001-08-29 2006-02-22 東京エレクトロン株式会社 絶縁膜の形成方法および形成システム
JP2003152102A (ja) 2001-11-15 2003-05-23 Hitachi Ltd 半導体集積回路装置の製造方法
CN100334732C (zh) 2001-11-30 2007-08-29 株式会社瑞萨科技 半导体集成电路器件及其制造方法
KR100466208B1 (ko) * 2002-07-08 2005-01-13 매그나칩 반도체 유한회사 반도체 소자의 제조 방법
JP2004087960A (ja) * 2002-08-28 2004-03-18 Fujitsu Ltd 半導体装置の製造方法
JP2004095886A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置及びその製造方法
KR100874647B1 (ko) * 2002-09-17 2008-12-17 엘지디스플레이 주식회사 액정표시소자 및 그 제조 방법
GB2394231A (en) * 2002-10-17 2004-04-21 Lohmann Gmbh & Co Kg Non-woven textile structure incorporating stabilized filament assemblies
US6706581B1 (en) * 2002-10-29 2004-03-16 Taiwan Semiconductor Manufacturing Company Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices
JP2004363214A (ja) * 2003-06-03 2004-12-24 Renesas Technology Corp 半導体集積回路装置の製造方法および半導体集積回路装置
US7132350B2 (en) * 2003-07-21 2006-11-07 Macronix International Co., Ltd. Method for manufacturing a programmable eraseless memory
JP5015420B2 (ja) * 2003-08-15 2012-08-29 旺宏電子股▲ふん▼有限公司 プログラマブル消去不要メモリに対するプログラミング方法
KR100541817B1 (ko) * 2003-10-14 2006-01-11 삼성전자주식회사 듀얼 게이트 절연막 형성 방법
US7084035B2 (en) 2004-04-13 2006-08-01 Ricoh Company, Ltd. Semiconductor device placing high, medium, and low voltage transistors on the same substrate
JP2005353892A (ja) * 2004-06-11 2005-12-22 Seiko Epson Corp 半導体基板、半導体装置及びその製造方法
CN101116185B (zh) * 2005-03-01 2010-04-21 富士通微电子株式会社 半导体装置的制造方法
US7011980B1 (en) 2005-05-09 2006-03-14 International Business Machines Corporation Method and structures for measuring gate tunneling leakage parameters of field effect transistors
KR100719219B1 (ko) * 2005-09-20 2007-05-16 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US7968148B2 (en) * 2006-09-15 2011-06-28 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with clean surfaces
JP2008270837A (ja) * 2008-06-26 2008-11-06 Renesas Technology Corp 半導体集積回路装置
KR101092317B1 (ko) * 2009-04-10 2011-12-09 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP5278132B2 (ja) * 2009-04-16 2013-09-04 富士通セミコンダクター株式会社 半導体装置の製造方法
CN102646595A (zh) * 2011-11-11 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、显示器件
US9373501B2 (en) * 2013-04-16 2016-06-21 International Business Machines Corporation Hydroxyl group termination for nucleation of a dielectric metallic oxide
JP7101090B2 (ja) 2018-09-12 2022-07-14 株式会社東芝 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0681319B1 (en) * 1994-04-15 2002-10-30 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
TW312831B (en) * 1996-08-16 1997-08-11 United Microelectronics Corp Manufacturing method of semiconductor memory device with capacitor(3)

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