JP4149095B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP4149095B2
JP4149095B2 JP22599199A JP22599199A JP4149095B2 JP 4149095 B2 JP4149095 B2 JP 4149095B2 JP 22599199 A JP22599199 A JP 22599199A JP 22599199 A JP22599199 A JP 22599199A JP 4149095 B2 JP4149095 B2 JP 4149095B2
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JP
Japan
Prior art keywords
insulating film
film
silicon oxide
manufacturing
integrated circuit
Prior art date
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Expired - Fee Related
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JP22599199A
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English (en)
Japanese (ja)
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JP2001015612A5 (enExample
JP2001015612A (ja
Inventor
隆行 神田
篤 平岩
範夫 鈴木
哲 酒井
修二 池田
安子 吉田
晋一 堀部
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Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP22599199A priority Critical patent/JP4149095B2/ja
Priority to US09/536,756 priority patent/US6713353B1/en
Priority to KR1020000022126A priority patent/KR20010020781A/ko
Publication of JP2001015612A publication Critical patent/JP2001015612A/ja
Priority to US10/211,262 priority patent/US6821854B2/en
Publication of JP2001015612A5 publication Critical patent/JP2001015612A5/ja
Application granted granted Critical
Publication of JP4149095B2 publication Critical patent/JP4149095B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP22599199A 1999-04-26 1999-08-10 半導体集積回路装置の製造方法 Expired - Fee Related JP4149095B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP22599199A JP4149095B2 (ja) 1999-04-26 1999-08-10 半導体集積回路装置の製造方法
US09/536,756 US6713353B1 (en) 1999-04-26 2000-03-28 Method of manufacturing a semiconductor integrated circuit device
KR1020000022126A KR20010020781A (ko) 1999-04-26 2000-04-26 반도체 집적 회로 장치의 제조 방법
US10/211,262 US6821854B2 (en) 1999-04-26 2002-08-05 Method of manufacturing a semiconductor integrated circuit device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11781599 1999-04-26
JP11-117815 1999-04-26
JP22599199A JP4149095B2 (ja) 1999-04-26 1999-08-10 半導体集積回路装置の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008121271A Division JP4951585B2 (ja) 1999-04-26 2008-05-07 半導体集積回路装置の製造方法
JP2008121272A Division JP2008277836A (ja) 1999-04-26 2008-05-07 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2001015612A JP2001015612A (ja) 2001-01-19
JP2001015612A5 JP2001015612A5 (enExample) 2004-10-28
JP4149095B2 true JP4149095B2 (ja) 2008-09-10

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JP22599199A Expired - Fee Related JP4149095B2 (ja) 1999-04-26 1999-08-10 半導体集積回路装置の製造方法

Country Status (3)

Country Link
US (2) US6713353B1 (enExample)
JP (1) JP4149095B2 (enExample)
KR (1) KR20010020781A (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008277836A (ja) * 1999-04-26 2008-11-13 Renesas Technology Corp 半導体集積回路装置
US6503851B2 (en) * 2000-08-31 2003-01-07 Micron Technology, Inc. Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
US6368986B1 (en) * 2000-08-31 2002-04-09 Micron Technology, Inc. Use of selective ozone TEOS oxide to create variable thickness layers and spacers
JP3746968B2 (ja) * 2001-08-29 2006-02-22 東京エレクトロン株式会社 絶縁膜の形成方法および形成システム
JP2003152102A (ja) 2001-11-15 2003-05-23 Hitachi Ltd 半導体集積回路装置の製造方法
JPWO2003049188A1 (ja) 2001-11-30 2005-04-21 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
KR100466208B1 (ko) * 2002-07-08 2005-01-13 매그나칩 반도체 유한회사 반도체 소자의 제조 방법
JP2004087960A (ja) * 2002-08-28 2004-03-18 Fujitsu Ltd 半導体装置の製造方法
JP2004095886A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置及びその製造方法
KR100874647B1 (ko) * 2002-09-17 2008-12-17 엘지디스플레이 주식회사 액정표시소자 및 그 제조 방법
GB2394231A (en) * 2002-10-17 2004-04-21 Lohmann Gmbh & Co Kg Non-woven textile structure incorporating stabilized filament assemblies
US6706581B1 (en) * 2002-10-29 2004-03-16 Taiwan Semiconductor Manufacturing Company Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices
JP2004363214A (ja) * 2003-06-03 2004-12-24 Renesas Technology Corp 半導体集積回路装置の製造方法および半導体集積回路装置
US7132350B2 (en) * 2003-07-21 2006-11-07 Macronix International Co., Ltd. Method for manufacturing a programmable eraseless memory
JP5015420B2 (ja) * 2003-08-15 2012-08-29 旺宏電子股▲ふん▼有限公司 プログラマブル消去不要メモリに対するプログラミング方法
KR100541817B1 (ko) * 2003-10-14 2006-01-11 삼성전자주식회사 듀얼 게이트 절연막 형성 방법
US7084035B2 (en) 2004-04-13 2006-08-01 Ricoh Company, Ltd. Semiconductor device placing high, medium, and low voltage transistors on the same substrate
JP2005353892A (ja) * 2004-06-11 2005-12-22 Seiko Epson Corp 半導体基板、半導体装置及びその製造方法
WO2006092846A1 (ja) * 2005-03-01 2006-09-08 Fujitsu Limited 半導体装置及びその製造方法
US7011980B1 (en) 2005-05-09 2006-03-14 International Business Machines Corporation Method and structures for measuring gate tunneling leakage parameters of field effect transistors
KR100719219B1 (ko) * 2005-09-20 2007-05-16 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US7968148B2 (en) * 2006-09-15 2011-06-28 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with clean surfaces
JP2008270837A (ja) * 2008-06-26 2008-11-06 Renesas Technology Corp 半導体集積回路装置
KR101092317B1 (ko) * 2009-04-10 2011-12-09 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP5278132B2 (ja) * 2009-04-16 2013-09-04 富士通セミコンダクター株式会社 半導体装置の製造方法
CN102646595A (zh) * 2011-11-11 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、显示器件
US9373501B2 (en) * 2013-04-16 2016-06-21 International Business Machines Corporation Hydroxyl group termination for nucleation of a dielectric metallic oxide
JP7101090B2 (ja) 2018-09-12 2022-07-14 株式会社東芝 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0681319B1 (en) * 1994-04-15 2002-10-30 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
TW312831B (en) * 1996-08-16 1997-08-11 United Microelectronics Corp Manufacturing method of semiconductor memory device with capacitor(3)

Also Published As

Publication number Publication date
US6713353B1 (en) 2004-03-30
US6821854B2 (en) 2004-11-23
JP2001015612A (ja) 2001-01-19
KR20010020781A (ko) 2001-03-15
US20030003639A1 (en) 2003-01-02

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