KR100874647B1 - 액정표시소자 및 그 제조 방법 - Google Patents
액정표시소자 및 그 제조 방법 Download PDFInfo
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- KR100874647B1 KR100874647B1 KR1020020056504A KR20020056504A KR100874647B1 KR 100874647 B1 KR100874647 B1 KR 100874647B1 KR 1020020056504 A KR1020020056504 A KR 1020020056504A KR 20020056504 A KR20020056504 A KR 20020056504A KR 100874647 B1 KR100874647 B1 KR 100874647B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 104
- 239000010408 film Substances 0.000 claims abstract description 90
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 50
- 210000002858 crystal cell Anatomy 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 136
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 21
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 229910004205 SiNX Inorganic materials 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Condensed Matter Physics & Semiconductors (AREA)
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- Thin Film Transistor (AREA)
Abstract
Description
상기 제1 박막트랜지스터의 게이트절연막의 두께는 상기 제2 박막트랜지스터의 게이트절연막의 두께보다 두껍게 형성된다.
상기 제1 박막트랜지스트의 게이트절연막은 중간층이 에치스타퍼층인 삼층구조로 형성된다.
상기 제2 박막트랜지스터의 게이트절연막은 최상층이 에치스타퍼층인 이층구조로 형성된다.
상기 제1 및 제2 박막트랜지스터의 응답속도는 상기 게이트절연막의 두께 차에 의해 서로 다르다.
상기 에치스타퍼층은 SiNx로 형성된다.
상기 제1 박막트랜지스터의 게이트절연막의 최하층과 최상층 및 상기 제2 박막트랜지스터의 게이트절연막의 최하층은 SiO2로 형성된다.
상기 목적을 달성하기 위하여, 본 발명에 따라 화상표시부에 포함되는 다수의 신호라인들과 교차로 할당된 영역마다 마련된 액정셀들 각각을 구동하기 위한 제1 박막트랜지스터와, 상기 화상표시부와 함께 표시패널 내에 형성되는 구동회로를 구동하기 위한 제2 박막트랜지스터를 형성하는 제조방법은, 상기 제1 및 제2 박막트랜지스터에 포함되는 게이트전극과 액티브층 사이의 게이트절연막을 형성하는 단계에서, 상기 게이트절연막을 에치스타퍼층을 갖는 다층 구조로 상기 제1 및 제2 박막트랜지스터에서 서로 다른 두께로 형성한다.
Claims (13)
- 화상표시부에 포함되는 다수의 신호라인들과 교차로 할당된 영역마다 마련된 액정셀들 각각을 구동하기 위한 제1 박막트랜지스터와,상기 화상표시부와 함께 표시패널 내에 형성되는 구동회로에 포함되는 제2 박막트랜지스터와,상기 제1 및 제2 박막트랜지스터의 각각에 포함되는 게이트전극과 액티브층 사이에 형성되며 에치스타퍼층을 갖는 다층 구조의 게이트절연막을 구비하며,상기 제1 및 제2 박막트랜지스터의 게이트절연막은 서로 다른 두께로 형성되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서,상기 제1 박막트랜지스터의 게이트절연막의 두께는 상기 제2 박막트랜지스터의 게이트절연막의 두께보다 두껍게 형성되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서,상기 제1 박막트랜지스트의 게이트절연막은 중간층이 에치스타퍼층인 삼층구조로 형성되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서,상기 제2 박막트랜지스터의 게이트절연막은 최상층이 에치스타퍼층인 이층구조로 형성되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서,상기 제1 및 제2 박막트랜지스터의 응답속도는 상기 게이트절연막의 두께 차에 의해 서로 다른 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서,상기 에치스타퍼층은 SiNx로 형성되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서,상기 제1 박막트랜지스터의 게이트절연막의 최하층과 최상층 및 상기 제2 박막트랜지스터의 게이트절연막의 최하층은 SiO2로 형성되는 것을 특징으로 하는 액정표시소자.
- 화상표시부에 포함되는 다수의 신호라인들과 교차로 할당된 영역마다 마련된 액정셀들 각각을 구동하기 위한 제1 박막트랜지스터와, 상기 화상표시부와 함께 표시패널 내에 형성되는 구동회로를 구동하기 위한 제2 박막트랜지스터를 형성하는 제조방법에 있어서,상기 제1 및 제2 박막트랜지스터에 포함되는 게이트전극과 액티브층 사이의 게이트절연막을 형성하는 단계에서, 상기 게이트절연막을 에치스타퍼층을 갖는 다층 구조로 상기 제1 및 제2 박막트랜지스터에서 서로 다른 두께로 형성하는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 8 항에 있어서,기판 상에 상기 제1 및 제2 박막트랜지스터의 버퍼막을 형성하는 단계와,상기 버퍼막 상에 상기 제1 및 제2 박막트랜지스터의 액티브층을 형성하는 단계와,상기 게이트절연막 상에 상기 제1 및 제2 박막트랜지스터의 게이트전극을 형성하는 단계와,상기 게이트전극이 형성된 게이트절연막 상에 상기 제1 및 제2 박막트랜지스터의 층간절연막을 형성하는 단계와,상기 층간절연막 상에 상기 제1 및 제2 박막트랜지스터의 소스전극 및 드레인전극을 형성하는 단계와,상기 층간절연막 상에 상기 제1 및 제2 박막트랜지스터의 보호막을 형성하는 단계와,상기 제1 박막트랜지스터의 드레인전극과 접촉되는 화소전극을 형성하는 단계를 추가로 포함하는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 8 항에 있어서,상기 제1 박막트랜지스터의 게이트절연막은 가운데층이 에치스타퍼층인 3층구조로 형성되는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 8 항에 있어서,상기 제2 박막트랜지스터의 게이트절연막은 최상층이 에치스타퍼인 2층구조로 형성되는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 8 항에 있어서,상기 에치스타퍼층은 SiNx로 형성되는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 8 항에 있어서,상기 제1 박막트랜지스터의 게이트절연막의 최하층과 최상층 및 상기 제2 박막트랜지스터의 게이트절연막의 최하층은 SiO2로 형성되는 것을 특징으로 하는 액정표시소자의 제조방법.
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KR1020020056504A KR100874647B1 (ko) | 2002-09-17 | 2002-09-17 | 액정표시소자 및 그 제조 방법 |
US10/662,389 US6999136B2 (en) | 2002-09-17 | 2003-09-16 | Liquid crystal display and fabricating method thereof |
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---|---|---|---|---|
KR100560405B1 (ko) * | 2003-11-04 | 2006-03-14 | 엘지.필립스 엘시디 주식회사 | 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법 |
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