JP2003264195A5 - - Google Patents
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- Publication number
- JP2003264195A5 JP2003264195A5 JP2002064225A JP2002064225A JP2003264195A5 JP 2003264195 A5 JP2003264195 A5 JP 2003264195A5 JP 2002064225 A JP2002064225 A JP 2002064225A JP 2002064225 A JP2002064225 A JP 2002064225A JP 2003264195 A5 JP2003264195 A5 JP 2003264195A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- manufacturing
- resist stripping
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 22
- 238000000034 method Methods 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 15
- 239000011229 interlayer Substances 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 229910052710 silicon Inorganic materials 0.000 claims 9
- 239000010703 silicon Substances 0.000 claims 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 6
- 230000001681 protective effect Effects 0.000 claims 5
- 238000001035 drying Methods 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 239000010410 layer Substances 0.000 claims 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims 4
- 238000009832 plasma treatment Methods 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 3
- 238000005406 washing Methods 0.000 claims 3
- 239000004925 Acrylic resin Substances 0.000 claims 2
- 229920000178 Acrylic resin Polymers 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 238000010129 solution processing Methods 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002064225A JP4275346B2 (ja) | 2002-03-08 | 2002-03-08 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002064225A JP4275346B2 (ja) | 2002-03-08 | 2002-03-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003264195A JP2003264195A (ja) | 2003-09-19 |
| JP2003264195A5 true JP2003264195A5 (enExample) | 2005-08-25 |
| JP4275346B2 JP4275346B2 (ja) | 2009-06-10 |
Family
ID=29197124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002064225A Expired - Fee Related JP4275346B2 (ja) | 2002-03-08 | 2002-03-08 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4275346B2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005134823A (ja) * | 2003-10-31 | 2005-05-26 | Arisawa Mfg Co Ltd | リアプロジェクションディスプレイ用スクリーンにおけるマイクロレンズアレイシートの製造方法 |
| JP4566547B2 (ja) * | 2003-11-13 | 2010-10-20 | Ｈｏｙａ株式会社 | マスクブランクスの製造方法及び転写マスクの製造方法 |
| CN100378929C (zh) * | 2004-12-13 | 2008-04-02 | 友达光电股份有限公司 | 薄膜晶体管元件的制造方法 |
| GB2448174B (en) * | 2007-04-04 | 2009-12-09 | Cambridge Display Tech Ltd | Organic thin film transistors |
| JP4688966B2 (ja) * | 2010-07-06 | 2011-05-25 | Ｈｏｙａ株式会社 | マスクブランクスの製造方法及び転写マスクの製造方法 |
| JP2012222171A (ja) * | 2011-04-11 | 2012-11-12 | Hitachi Ltd | 表示装置およびその製造方法 |
| JP2013080040A (ja) * | 2011-10-03 | 2013-05-02 | Seiko Epson Corp | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
| US10181484B2 (en) | 2017-04-05 | 2019-01-15 | Wuhan China Star Optoelectronics Technology Co., Ltd. | TFT substrate manufacturing method and TFT substrate |
| CN107039351B (zh) * | 2017-04-05 | 2019-10-11 | 武汉华星光电技术有限公司 | Tft基板的制作方法及tft基板 |
| CN106992116B (zh) * | 2017-04-20 | 2019-10-11 | 京东方科技集团股份有限公司 | 制造半导体器件的方法、阵列基板和显示装置 |
| CN115483096A (zh) * | 2021-05-31 | 2022-12-16 | 清华大学 | 一种硅结构去功能化的处理方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3465467B2 (ja) * | 1996-01-25 | 2003-11-10 | ミツミ電機株式会社 | レジスト剥離装置の制御方法 |
| JP3538084B2 (ja) * | 1999-09-17 | 2004-06-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001175198A (ja) * | 1999-12-14 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2001308342A (ja) * | 2000-02-15 | 2001-11-02 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法および液晶表示装置 |
-
2002
- 2002-03-08 JP JP2002064225A patent/JP4275346B2/ja not_active Expired - Fee Related
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