JP2004031394A5 - - Google Patents
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- Publication number
- JP2004031394A5 JP2004031394A5 JP2002181058A JP2002181058A JP2004031394A5 JP 2004031394 A5 JP2004031394 A5 JP 2004031394A5 JP 2002181058 A JP2002181058 A JP 2002181058A JP 2002181058 A JP2002181058 A JP 2002181058A JP 2004031394 A5 JP2004031394 A5 JP 2004031394A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- manufacturing
- semiconductor device
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 9
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- 229910021529 ammonia Inorganic materials 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 238000000034 method Methods 0.000 claims 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002181058A JP4007864B2 (ja) | 2002-06-21 | 2002-06-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002181058A JP4007864B2 (ja) | 2002-06-21 | 2002-06-21 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004031394A JP2004031394A (ja) | 2004-01-29 |
| JP2004031394A5 true JP2004031394A5 (enExample) | 2005-10-13 |
| JP4007864B2 JP4007864B2 (ja) | 2007-11-14 |
Family
ID=31177991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002181058A Expired - Fee Related JP4007864B2 (ja) | 2002-06-21 | 2002-06-21 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4007864B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005159316A (ja) * | 2003-10-30 | 2005-06-16 | Tokyo Electron Ltd | 半導体装置の製造方法及び成膜装置並びに記憶媒体 |
| JP2005236083A (ja) * | 2004-02-20 | 2005-09-02 | Toshiba Corp | 半導体装置の製造方法 |
| JP4966490B2 (ja) * | 2004-11-15 | 2012-07-04 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
| WO2012165263A1 (ja) * | 2011-06-03 | 2012-12-06 | 東京エレクトロン株式会社 | ゲート絶縁膜の形成方法およびゲート絶縁膜の形成装置 |
| JP6218062B2 (ja) * | 2012-08-24 | 2017-10-25 | 学校法人早稲田大学 | 電力素子、電力制御機器、電力素子の製造方法 |
-
2002
- 2002-06-21 JP JP2002181058A patent/JP4007864B2/ja not_active Expired - Fee Related
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