JP2007536734A5 - - Google Patents
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- Publication number
- JP2007536734A5 JP2007536734A5 JP2007511381A JP2007511381A JP2007536734A5 JP 2007536734 A5 JP2007536734 A5 JP 2007536734A5 JP 2007511381 A JP2007511381 A JP 2007511381A JP 2007511381 A JP2007511381 A JP 2007511381A JP 2007536734 A5 JP2007536734 A5 JP 2007536734A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- silicon nitride
- spacer
- gate electrode
- liner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000006850 spacer group Chemical group 0.000 claims 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 8
- 238000005468 ion implantation Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 125000001475 halogen functional group Chemical group 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/839,385 US7125805B2 (en) | 2004-05-05 | 2004-05-05 | Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processing |
| US10/839,385 | 2004-05-05 | ||
| PCT/US2005/012252 WO2005112099A2 (en) | 2004-05-05 | 2005-04-13 | Method of semiconductor fabrication in corporating disposable spacer into elevated source/drain processing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007536734A JP2007536734A (ja) | 2007-12-13 |
| JP2007536734A5 true JP2007536734A5 (enExample) | 2008-06-05 |
| JP5048480B2 JP5048480B2 (ja) | 2012-10-17 |
Family
ID=35239953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007511381A Expired - Fee Related JP5048480B2 (ja) | 2004-05-05 | 2005-04-13 | 使い捨てスペーサを隆起ソース／ドレイン処理に取り入れた半導体デバイスの製造方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7125805B2 (enExample) |
| EP (1) | EP1756860B1 (enExample) |
| JP (1) | JP5048480B2 (enExample) |
| KR (1) | KR20070007900A (enExample) |
| CN (1) | CN1998072B (enExample) |
| AT (1) | ATE447765T1 (enExample) |
| DE (1) | DE602005017490D1 (enExample) |
| TW (1) | TWI377625B (enExample) |
| WO (1) | WO2005112099A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100668954B1 (ko) * | 2004-12-15 | 2007-01-12 | 동부일렉트로닉스 주식회사 | 박막트랜지스터 제조 방법 |
| US7745296B2 (en) * | 2005-06-08 | 2010-06-29 | Globalfoundries Inc. | Raised source and drain process with disposable spacers |
| US20070056930A1 (en) * | 2005-09-14 | 2007-03-15 | International Business Machines Corporation | Polysilicon etching methods |
| US7514331B2 (en) * | 2006-06-08 | 2009-04-07 | Texas Instruments Incorporated | Method of manufacturing gate sidewalls that avoids recessing |
| US7510923B2 (en) * | 2006-12-19 | 2009-03-31 | Texas Instruments Incorporated | Slim spacer implementation to improve drive current |
| US7550808B2 (en) * | 2007-01-18 | 2009-06-23 | International Business Machines Corporation | Fully siliciding regions to improve performance |
| JP2009158677A (ja) * | 2007-12-26 | 2009-07-16 | Renesas Technology Corp | 半導体装置の製造方法及び混成トランジスタ用半導体装置の製造方法 |
| JP6169222B2 (ja) * | 2012-01-23 | 2017-07-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP5968708B2 (ja) | 2012-01-23 | 2016-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9171927B2 (en) | 2013-03-26 | 2015-10-27 | GlobalFoundries, Inc. | Spacer replacement for replacement metal gate semiconductor devices |
| CN103412444B (zh) * | 2013-07-23 | 2015-08-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法和显示面板 |
| JP6279291B2 (ja) * | 2013-11-18 | 2018-02-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US9773865B2 (en) | 2014-09-22 | 2017-09-26 | International Business Machines Corporation | Self-forming spacers using oxidation |
| US11653498B2 (en) * | 2017-11-30 | 2023-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device with improved data retention |
| JP7034834B2 (ja) | 2018-05-30 | 2022-03-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US11437245B2 (en) * | 2020-09-30 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Germanium hump reduction |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200352A (en) * | 1991-11-25 | 1993-04-06 | Motorola Inc. | Transistor having a lightly doped region and method of formation |
| US5496750A (en) * | 1994-09-19 | 1996-03-05 | Texas Instruments Incorporated | Elevated source/drain junction metal oxide semiconductor field-effect transistor using blanket silicon deposition |
| JP2848299B2 (ja) * | 1995-12-21 | 1999-01-20 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US5847428A (en) * | 1996-12-06 | 1998-12-08 | Advanced Micro Devices, Inc. | Integrated circuit gate conductor which uses layered spacers to produce a graded junction |
| TW469648B (en) * | 1999-09-07 | 2001-12-21 | Sharp Kk | Semiconductor device and its manufacture method |
| US6555437B1 (en) * | 2001-04-27 | 2003-04-29 | Advanced Micro Devices, Inc. | Multiple halo implant in a MOSFET with raised source/drain structure |
| US20020171107A1 (en) * | 2001-05-21 | 2002-11-21 | Baohong Cheng | Method for forming a semiconductor device having elevated source and drain regions |
| US6429084B1 (en) * | 2001-06-20 | 2002-08-06 | International Business Machines Corporation | MOS transistors with raised sources and drains |
| US6614079B2 (en) * | 2001-07-19 | 2003-09-02 | International Business Machines Corporation | All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS |
| JP2004095639A (ja) * | 2002-08-29 | 2004-03-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| US6800530B2 (en) * | 2003-01-14 | 2004-10-05 | International Business Machines Corporation | Triple layer hard mask for gate patterning to fabricate scaled CMOS transistors |
| US20050048732A1 (en) * | 2003-08-26 | 2005-03-03 | International Business Machines Corporation | Method to produce transistor having reduced gate height |
-
2004
- 2004-05-05 US US10/839,385 patent/US7125805B2/en not_active Expired - Lifetime
-
2005
- 2005-04-13 CN CN200580014349XA patent/CN1998072B/zh not_active Expired - Fee Related
- 2005-04-13 JP JP2007511381A patent/JP5048480B2/ja not_active Expired - Fee Related
- 2005-04-13 DE DE602005017490T patent/DE602005017490D1/de not_active Expired - Lifetime
- 2005-04-13 AT AT05735763T patent/ATE447765T1/de not_active IP Right Cessation
- 2005-04-13 WO PCT/US2005/012252 patent/WO2005112099A2/en not_active Ceased
- 2005-04-13 EP EP05735763A patent/EP1756860B1/en not_active Expired - Lifetime
- 2005-04-13 KR KR1020067023143A patent/KR20070007900A/ko not_active Withdrawn
- 2005-05-05 TW TW094114573A patent/TWI377625B/zh not_active IP Right Cessation
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