JP2009514220A5 - - Google Patents

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Publication number
JP2009514220A5
JP2009514220A5 JP2008537752A JP2008537752A JP2009514220A5 JP 2009514220 A5 JP2009514220 A5 JP 2009514220A5 JP 2008537752 A JP2008537752 A JP 2008537752A JP 2008537752 A JP2008537752 A JP 2008537752A JP 2009514220 A5 JP2009514220 A5 JP 2009514220A5
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Japan
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activation region
horizontal
region
vertical
forming
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JP2008537752A
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Japanese (ja)
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JP2009514220A (ja
JP5415766B2 (ja
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Priority claimed from US11/257,973 external-priority patent/US8513066B2/en
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JP2008537752A 2005-10-25 2006-10-11 逆ｔ型チャネルトランジスタを製造する方法 Expired - Fee Related JP5415766B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/257,973 2005-10-25
US11/257,973 US8513066B2 (en) 2005-10-25 2005-10-25 Method of making an inverted-T channel transistor
PCT/US2006/040019 WO2007050317A2 (en) 2005-10-25 2006-10-11 A method of making an inverted-t channel transistor

Publications (3)

Publication Number Publication Date
JP2009514220A JP2009514220A (ja) 2009-04-02
JP2009514220A5 true JP2009514220A5 (enExample) 2009-12-03
JP5415766B2 JP5415766B2 (ja) 2014-02-12

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Family Applications (1)

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JP2008537752A Expired - Fee Related JP5415766B2 (ja) 2005-10-25 2006-10-11 逆ｔ型チャネルトランジスタを製造する方法

Country Status (7)

Country Link
US (1) US8513066B2 (enExample)
EP (1) EP1943680A2 (enExample)
JP (1) JP5415766B2 (enExample)
KR (1) KR20080069971A (enExample)
CN (1) CN101297406A (enExample)
TW (1) TW200721324A (enExample)
WO (1) WO2007050317A2 (enExample)

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