JP2005136002A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005136002A5 JP2005136002A5 JP2003367947A JP2003367947A JP2005136002A5 JP 2005136002 A5 JP2005136002 A5 JP 2005136002A5 JP 2003367947 A JP2003367947 A JP 2003367947A JP 2003367947 A JP2003367947 A JP 2003367947A JP 2005136002 A5 JP2005136002 A5 JP 2005136002A5
- Authority
- JP
- Japan
- Prior art keywords
- mask
- etching
- forming
- group iii
- photoresist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 15
- 229920002120 photoresistant polymer Polymers 0.000 claims 10
- 150000004767 nitrides Chemical class 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 2
- 229910052753 mercury Inorganic materials 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003367947A JP4151560B2 (ja) | 2003-10-28 | 2003-10-28 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003367947A JP4151560B2 (ja) | 2003-10-28 | 2003-10-28 | 半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008004692A Division JP4821778B2 (ja) | 2008-01-11 | 2008-01-11 | 光電気化学エッチング装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005136002A JP2005136002A (ja) | 2005-05-26 |
| JP2005136002A5 true JP2005136002A5 (enExample) | 2006-03-16 |
| JP4151560B2 JP4151560B2 (ja) | 2008-09-17 |
Family
ID=34645801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003367947A Expired - Fee Related JP4151560B2 (ja) | 2003-10-28 | 2003-10-28 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4151560B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
| JP2007067290A (ja) * | 2005-09-01 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子の製造方法及び窒化物半導体素子製造装置 |
| JP2007227450A (ja) * | 2006-02-21 | 2007-09-06 | Oki Electric Ind Co Ltd | 光電気化学エッチング装置 |
| WO2007105281A1 (ja) * | 2006-03-10 | 2007-09-20 | Fujitsu Limited | 化合物半導体装置の製造方法及びエッチング液 |
| FR2945547B1 (fr) * | 2009-05-14 | 2012-02-24 | Univ Troyes Technologie | Procede de preparation d'une couche nanostructuree, nanostructure obtenue suivant un tel procede. |
| KR101880445B1 (ko) * | 2011-07-14 | 2018-07-24 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛 |
| CN104364916B (zh) | 2012-06-01 | 2018-01-19 | 皇家飞利浦有限公司 | 发光器件和用于创建发光器件的方法 |
| EP2743966B1 (en) * | 2012-12-14 | 2020-11-25 | Seoul Viosys Co., Ltd. | Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same |
| JP6935112B2 (ja) * | 2018-07-19 | 2021-09-15 | ボンドテック株式会社 | 基板接合装置 |
| CN111261506A (zh) * | 2018-11-30 | 2020-06-09 | 东泰高科装备科技有限公司 | 一种半导体器件光化学刻蚀方法及装置 |
| JP7261685B2 (ja) | 2019-07-30 | 2023-04-20 | 住友化学株式会社 | 構造体の製造方法 |
| JP7261684B2 (ja) * | 2019-07-30 | 2023-04-20 | 住友化学株式会社 | 構造体の製造方法 |
| JP7221177B2 (ja) * | 2019-09-05 | 2023-02-13 | 住友化学株式会社 | 構造体の製造方法および製造装置 |
| JP7767762B2 (ja) * | 2021-08-16 | 2025-11-12 | 住友電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
-
2003
- 2003-10-28 JP JP2003367947A patent/JP4151560B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2005136002A5 (enExample) | ||
| TWI549160B (zh) | 晶圓的製備方法 | |
| CN108227412A (zh) | 光刻掩模层 | |
| JP2008015510A5 (enExample) | ||
| CN102646633B (zh) | 阵列基板及其制作方法 | |
| CN104966665B (zh) | 一种改善SiC与SiO2界面态密度的方法 | |
| TW201411692A (zh) | 以壓印方式製造選擇性成長遮罩之方法 | |
| EP1923907A3 (en) | High electron mobility transistor semiconductor device and fabrication method thereof | |
| CN101251713B (zh) | 深紫外光刻制作“t”型栅的方法 | |
| CN104538356A (zh) | 一种阵列基板及其制作方法、显示装置 | |
| TW558794B (en) | Method for forming high quality multiple thickness oxide layers by reducing descum induced defects | |
| CN105977146B (zh) | 一种利用常规光刻技术实现深亚微米t型栅的制备方法 | |
| CN104008946B (zh) | 铝刻蚀工艺用聚焦环、铝刻蚀工艺 | |
| CN108987529B (zh) | 一种柔性氧化锌光敏晶体管的制备方法 | |
| CN106024707B (zh) | 阵列基板及其制备方法 | |
| TWI343078B (en) | Wet cleaning process and method for fabricating semiconductor device using the same | |
| JP2004031394A5 (enExample) | ||
| CN102437064A (zh) | 硅纳米线的制造方法 | |
| CN106154744A (zh) | 一种金属纳米线的制备方法 | |
| CN105632920B (zh) | 薄膜晶体管基板的制作方法 | |
| US20210351208A1 (en) | Array substrate and manufacturing method thereof | |
| KR100762027B1 (ko) | 몰리브덴/알루미늄/몰리브덴 3층막 구조를 갖는 전극의식각방법 | |
| TW201339769A (zh) | 光刻膠的去除方法 | |
| JP2008153354A5 (enExample) | ||
| CN108962727A (zh) | 半导体结构的制作方法 |