JP4151560B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4151560B2
JP4151560B2 JP2003367947A JP2003367947A JP4151560B2 JP 4151560 B2 JP4151560 B2 JP 4151560B2 JP 2003367947 A JP2003367947 A JP 2003367947A JP 2003367947 A JP2003367947 A JP 2003367947A JP 4151560 B2 JP4151560 B2 JP 4151560B2
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Japan
Prior art keywords
etching
mask
photoelectrochemical
group iii
photoelectrochemical etching
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Expired - Fee Related
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JP2003367947A
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English (en)
Japanese (ja)
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JP2005136002A5 (enExample
JP2005136002A (ja
Inventor
英之 大来
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Oki Electric Industry Co Ltd
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Oki Electric Industry Co Ltd
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Priority to JP2003367947A priority Critical patent/JP4151560B2/ja
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  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)
JP2003367947A 2003-10-28 2003-10-28 半導体装置の製造方法 Expired - Fee Related JP4151560B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003367947A JP4151560B2 (ja) 2003-10-28 2003-10-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003367947A JP4151560B2 (ja) 2003-10-28 2003-10-28 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008004692A Division JP4821778B2 (ja) 2008-01-11 2008-01-11 光電気化学エッチング装置

Publications (3)

Publication Number Publication Date
JP2005136002A JP2005136002A (ja) 2005-05-26
JP2005136002A5 JP2005136002A5 (enExample) 2006-03-16
JP4151560B2 true JP4151560B2 (ja) 2008-09-17

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JP2003367947A Expired - Fee Related JP4151560B2 (ja) 2003-10-28 2003-10-28 半導体装置の製造方法

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JP (1) JP4151560B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070018199A1 (en) * 2005-07-20 2007-01-25 Cree, Inc. Nitride-based transistors and fabrication methods with an etch stop layer
JP2007067290A (ja) * 2005-09-01 2007-03-15 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法及び窒化物半導体素子製造装置
JP2007227450A (ja) * 2006-02-21 2007-09-06 Oki Electric Ind Co Ltd 光電気化学エッチング装置
WO2007105281A1 (ja) * 2006-03-10 2007-09-20 Fujitsu Limited 化合物半導体装置の製造方法及びエッチング液
FR2945547B1 (fr) * 2009-05-14 2012-02-24 Univ Troyes Technologie Procede de preparation d'une couche nanostructuree, nanostructure obtenue suivant un tel procede.
KR101880445B1 (ko) * 2011-07-14 2018-07-24 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛
CN104364916B (zh) 2012-06-01 2018-01-19 皇家飞利浦有限公司 发光器件和用于创建发光器件的方法
EP2743966B1 (en) * 2012-12-14 2020-11-25 Seoul Viosys Co., Ltd. Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same
JP6935112B2 (ja) * 2018-07-19 2021-09-15 ボンドテック株式会社 基板接合装置
CN111261506A (zh) * 2018-11-30 2020-06-09 东泰高科装备科技有限公司 一种半导体器件光化学刻蚀方法及装置
JP7261685B2 (ja) 2019-07-30 2023-04-20 住友化学株式会社 構造体の製造方法
JP7261684B2 (ja) * 2019-07-30 2023-04-20 住友化学株式会社 構造体の製造方法
JP7221177B2 (ja) * 2019-09-05 2023-02-13 住友化学株式会社 構造体の製造方法および製造装置
JP7767762B2 (ja) * 2021-08-16 2025-11-12 住友電気工業株式会社 半導体装置及び半導体装置の製造方法

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JP2005136002A (ja) 2005-05-26

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