JP5970736B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5970736B2 JP5970736B2 JP2012103529A JP2012103529A JP5970736B2 JP 5970736 B2 JP5970736 B2 JP 5970736B2 JP 2012103529 A JP2012103529 A JP 2012103529A JP 2012103529 A JP2012103529 A JP 2012103529A JP 5970736 B2 JP5970736 B2 JP 5970736B2
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- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims description 115
- 238000000034 method Methods 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 72
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910008599 TiW Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000010931 gold Substances 0.000 description 31
- 230000015572 biosynthetic process Effects 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 230000001681 protective effect Effects 0.000 description 14
- 238000001312 dry etching Methods 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 238000007689 inspection Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000011179 visual inspection Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/4175—Source or drain electrodes for field effect devices for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Description
1.RIEのエッチング条件
エッチングガス及びガス流量:Cl2=1.0sccm、又は、Cl2/Ar=1.0/0.5〜3.0sccm
圧力:0.5〜4.0Pa
RFパワー密度:1.0〜4.0W/cm2
バイアスパワー密度:0.3〜2.0W/cm2
2.ICPエッチングのエッチング条件
エッチングガス及びガス流量:Cl2=1.0sccm、又はCl2/Ar=1.0/0.5〜3.0sccm
圧力:0.2〜4.0Pa
ICPパワー密度:1.0〜4.0W/cm2
バイアスパワー密度:0.1〜2.0W/cm2
12 チャネル層
14 電子供給層
16 キャップ層
18 透明な半導体層
20 ドレイン電極
22 ソース電極
24 Ni層
26 Au層
28 ゲート電極
30 ソースパッド
32 第1保護膜
34 ドレイン配線
36 ソース配線
38 第2保護膜
39 マスク層
50、60、70 モニタ層
52、62、72 第1開口
54、64、74 第2開口
56 シード層
58 金属層
59 裏面配線
76 第3開口
78 ダミー配線
80 スクライブライン
Claims (3)
- 透明基板の第1主面側に設けられた可視光に対して透明である窒化物半導体層上に、Au、V、及びTaの何れかからなる膜厚が2nm以上且つ30nm以下の第1の層とNiからなる第2の層、又は、Ti、TiW、Al、W、Mo、Nb、Pt、Ta、及びVの何れかからなる膜厚が2nm以上且つ30nm以下の第1の層とAuからなる第2の層をこの順に形成する工程と、
前記透明基板の第2主面側に開口を有する選択エッチングのためのマスクを形成する工程と、
前記透明基板の第2主面側から、前記マスクの開口内に露出した前記透明基板および前記窒化物半導体層をエッチングする工程と、
前記マスクの開口内における前記第1の層が前記エッチングで除去されたことによる前記第2の層の露出を確認することにより、前記エッチングの完了を判定する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記エッチングの完了を判定する工程は、可視光によってなすことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第2の層は、前記第1の層をシード層としためっき法によって形成されることを特徴とする請求項1または2記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012103529A JP5970736B2 (ja) | 2012-04-27 | 2012-04-27 | 半導体装置の製造方法 |
US13/872,347 US20130288401A1 (en) | 2012-04-27 | 2013-04-29 | Method for fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012103529A JP5970736B2 (ja) | 2012-04-27 | 2012-04-27 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013232513A JP2013232513A (ja) | 2013-11-14 |
JP2013232513A5 JP2013232513A5 (ja) | 2015-05-07 |
JP5970736B2 true JP5970736B2 (ja) | 2016-08-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012103529A Active JP5970736B2 (ja) | 2012-04-27 | 2012-04-27 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US20130288401A1 (ja) |
JP (1) | JP5970736B2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6003213B2 (ja) * | 2012-05-17 | 2016-10-05 | 住友電気工業株式会社 | 半導体装置の製造方法 |
US9779988B2 (en) * | 2013-12-20 | 2017-10-03 | Nxp Usa, Inc. | Semiconductor devices with inner via |
WO2015093406A1 (ja) * | 2013-12-20 | 2015-06-25 | 日本碍子株式会社 | 窒化ガリウム層を含む基板およびその製造方法 |
JP6104858B2 (ja) | 2014-08-20 | 2017-03-29 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
KR102637316B1 (ko) * | 2016-12-06 | 2024-02-15 | 큐로미스, 인크 | 집적된 클램프 다이오드를 포함하는 횡형 고 전자 이동도 트랜지스터 |
CN107980171B (zh) * | 2016-12-23 | 2022-06-24 | 苏州能讯高能半导体有限公司 | 半导体芯片、半导体晶圆及半导体晶圆的制造方法 |
CN107068611A (zh) * | 2016-12-23 | 2017-08-18 | 苏州能讯高能半导体有限公司 | 半导体芯片、半导体晶圆及半导体晶圆的制造方法 |
DE102017103111A1 (de) * | 2017-02-16 | 2018-08-16 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterdiode und elektronische Schaltungsanordnung hiermit |
US10224285B2 (en) * | 2017-02-21 | 2019-03-05 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
US10096550B2 (en) | 2017-02-21 | 2018-10-09 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
CN109671774B (zh) * | 2017-10-16 | 2020-08-21 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
KR102327745B1 (ko) * | 2018-02-01 | 2021-11-17 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 및 그의 제조 방법 |
JP7215800B2 (ja) * | 2019-02-19 | 2023-01-31 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法および半導体装置 |
GB2593864B (en) * | 2020-02-28 | 2023-01-04 | X Fab France Sas | Improved transfer printing for RF applications |
JP2023062209A (ja) * | 2020-03-12 | 2023-05-08 | 住友電工デバイス・イノベーション株式会社 | 半導体デバイス及び半導体デバイスの製造方法 |
US11270928B2 (en) * | 2020-04-02 | 2022-03-08 | Macom Technology Solutions Holdings, Inc. | Unibody lateral via |
US11437301B2 (en) * | 2020-10-15 | 2022-09-06 | Nxp Usa, Inc. | Device with an etch stop layer and method therefor |
US20220392856A1 (en) * | 2021-06-03 | 2022-12-08 | Nxp Usa, Inc. | Wafer with semiconductor devices and integrated electrostatic discharge protection |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2591429B2 (ja) * | 1993-06-28 | 1997-03-19 | 日本電気株式会社 | 磁気抵抗素子 |
US5406122A (en) * | 1993-10-27 | 1995-04-11 | Hughes Aircraft Company | Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer |
US7892974B2 (en) * | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
JP4936695B2 (ja) * | 2004-09-29 | 2012-05-23 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
JP4089752B2 (ja) * | 2007-05-21 | 2008-05-28 | サンケン電気株式会社 | 半導体装置の製造方法 |
EP2107611A1 (en) * | 2008-03-31 | 2009-10-07 | Kabushiki Kaisha Toshiba | Field effect transistor with Ti adhesion layer under the gate electrode |
JP5604855B2 (ja) * | 2009-11-17 | 2014-10-15 | 富士通株式会社 | 半導体装置及びその製造方法 |
WO2012014675A1 (ja) * | 2010-07-29 | 2012-02-02 | 日本碍子株式会社 | 半導体素子、hemt素子、および半導体素子の製造方法 |
US8519548B2 (en) * | 2010-11-19 | 2013-08-27 | Electronics And Telecommunications Research Institute | Wafer level packaged GaN power device and the manufacturing method thereof |
-
2012
- 2012-04-27 JP JP2012103529A patent/JP5970736B2/ja active Active
-
2013
- 2013-04-29 US US13/872,347 patent/US20130288401A1/en not_active Abandoned
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Publication number | Publication date |
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JP2013232513A (ja) | 2013-11-14 |
US20130288401A1 (en) | 2013-10-31 |
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