JP2002319673A5 - - Google Patents
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- Publication number
- JP2002319673A5 JP2002319673A5 JP2002020962A JP2002020962A JP2002319673A5 JP 2002319673 A5 JP2002319673 A5 JP 2002319673A5 JP 2002020962 A JP2002020962 A JP 2002020962A JP 2002020962 A JP2002020962 A JP 2002020962A JP 2002319673 A5 JP2002319673 A5 JP 2002319673A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- less
- silicon oxide
- thickness
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 150000004645 aluminates Chemical class 0.000 claims 1
- 230000000295 complement effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/773,443 US6693051B2 (en) | 2001-02-01 | 2001-02-01 | Silicon oxide based gate dielectric layer |
| US09/773443 | 2001-02-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002319673A JP2002319673A (ja) | 2002-10-31 |
| JP2002319673A5 true JP2002319673A5 (enExample) | 2005-07-07 |
Family
ID=25098272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002020962A Abandoned JP2002319673A (ja) | 2001-02-01 | 2002-01-30 | 半導体デバイスとゲート誘電体層の形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US6693051B2 (enExample) |
| JP (1) | JP2002319673A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020102797A1 (en) * | 2001-02-01 | 2002-08-01 | Muller David A. | Composite gate dielectric layer |
| US7037862B2 (en) * | 2001-06-13 | 2006-05-02 | Micron Technology, Inc. | Dielectric layer forming method and devices formed therewith |
| KR100683594B1 (ko) * | 2002-06-26 | 2007-02-16 | 세미이큅, 인코포레이티드 | 반도체 디바이스 제조 방법 |
| US6723581B1 (en) * | 2002-10-21 | 2004-04-20 | Agere Systems Inc. | Semiconductor device having a high-K gate dielectric and method of manufacture thereof |
| US6825538B2 (en) * | 2002-11-20 | 2004-11-30 | Agere Systems Inc. | Semiconductor device using an insulating layer having a seed layer |
| EP1649501B1 (en) * | 2003-07-30 | 2007-01-03 | Infineon Technologies AG | High-k dielectric film, method of forming the same and related semiconductor device |
| US20050137468A1 (en) * | 2003-12-18 | 2005-06-23 | Jerome Avron | Device, system, and method for in-vivo sensing of a substance |
| US7138680B2 (en) * | 2004-09-14 | 2006-11-21 | Infineon Technologies Ag | Memory device with floating gate stack |
| US7282773B2 (en) * | 2004-09-14 | 2007-10-16 | Advanced Micro Devices Inc. | Semiconductor device with high-k dielectric layer |
| JP4735601B2 (ja) * | 2007-05-14 | 2011-07-27 | ソニー株式会社 | 原子層蒸着法を用いた薄膜形成方法 |
| JP5220549B2 (ja) * | 2008-10-20 | 2013-06-26 | 本田技研工業株式会社 | アウタロータ型多極発電機のステータ構造体 |
| US8394584B2 (en) | 2008-12-19 | 2013-03-12 | The Board Of Trustees Of The University Of Illinois | Detecting and sorting methylated DNA using a synthetic nanopore |
| US8748091B2 (en) * | 2009-12-18 | 2014-06-10 | The Board Of Trustees Of The University Of Illinois | Characterizing stretched polynucleotides in a synthetic nanopassage |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4783238A (en) * | 1987-07-31 | 1988-11-08 | Hughes Aircraft Company | Planarized insulation isolation |
| DE4243410C2 (de) * | 1992-12-17 | 1996-05-15 | Mannesmann Ag | Verfahren zur Herstellung eines Dünnfilmmeßwiderstandes |
| US5937303A (en) | 1997-10-29 | 1999-08-10 | Advanced Micro Devices | High dielectric constant gate dielectric integrated with nitrogenated gate electrode |
| US6057584A (en) * | 1997-12-19 | 2000-05-02 | Advanced Micro Devices, Inc. | Semiconductor device having a tri-layer gate insulating dielectric |
| JP2000106401A (ja) * | 1998-09-29 | 2000-04-11 | Sony Corp | メモリ素子およびその製造方法ならびに集積回路 |
| US6251800B1 (en) * | 1999-01-06 | 2001-06-26 | Advanced Micro Devices, Inc. | Ultrathin deposited gate dielectric formation using low-power, low-pressure PECVD for improved semiconductor device performance |
| US6074919A (en) | 1999-01-20 | 2000-06-13 | Advanced Micro Devices, Inc. | Method of forming an ultrathin gate dielectric |
| US6303047B1 (en) * | 1999-03-22 | 2001-10-16 | Lsi Logic Corporation | Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same |
| JP2001085545A (ja) * | 1999-09-16 | 2001-03-30 | Sony Corp | メモリ素子の製造方法 |
| KR100378186B1 (ko) * | 2000-10-19 | 2003-03-29 | 삼성전자주식회사 | 원자층 증착법으로 형성된 박막이 채용된 반도체 소자 및그 제조방법 |
-
2001
- 2001-02-01 US US09/773,443 patent/US6693051B2/en not_active Expired - Fee Related
-
2002
- 2002-01-30 JP JP2002020962A patent/JP2002319673A/ja not_active Abandoned
-
2003
- 2003-10-30 US US10/696,854 patent/US6844076B2/en not_active Expired - Fee Related
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