JP2002305303A5 - - Google Patents
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- Publication number
- JP2002305303A5 JP2002305303A5 JP2002025036A JP2002025036A JP2002305303A5 JP 2002305303 A5 JP2002305303 A5 JP 2002305303A5 JP 2002025036 A JP2002025036 A JP 2002025036A JP 2002025036 A JP2002025036 A JP 2002025036A JP 2002305303 A5 JP2002305303 A5 JP 2002305303A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- vapor deposition
- forming
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000010410 layer Substances 0.000 claims 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 11
- 239000010703 silicon Substances 0.000 claims 11
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 239000002356 single layer Substances 0.000 claims 6
- 238000007740 vapor deposition Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 229910052914 metal silicate Inorganic materials 0.000 claims 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 150000004760 silicates Chemical class 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/773442 | 2001-02-01 | ||
| US09/773,442 US20020102797A1 (en) | 2001-02-01 | 2001-02-01 | Composite gate dielectric layer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009063925A Division JP2009177192A (ja) | 2001-02-01 | 2009-03-17 | 半導体デバイスとゲート誘電体組み合わせ層の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002305303A JP2002305303A (ja) | 2002-10-18 |
| JP2002305303A5 true JP2002305303A5 (enExample) | 2005-03-03 |
Family
ID=25098269
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002025036A Withdrawn JP2002305303A (ja) | 2001-02-01 | 2002-02-01 | 半導体デバイスとゲート誘電体組み合わせ層の形成方法。 |
| JP2009063925A Pending JP2009177192A (ja) | 2001-02-01 | 2009-03-17 | 半導体デバイスとゲート誘電体組み合わせ層の形成方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009063925A Pending JP2009177192A (ja) | 2001-02-01 | 2009-03-17 | 半導体デバイスとゲート誘電体組み合わせ層の形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20020102797A1 (enExample) |
| JP (2) | JP2002305303A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6617209B1 (en) * | 2002-02-22 | 2003-09-09 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric |
| US6723581B1 (en) * | 2002-10-21 | 2004-04-20 | Agere Systems Inc. | Semiconductor device having a high-K gate dielectric and method of manufacture thereof |
| US6787440B2 (en) * | 2002-12-10 | 2004-09-07 | Intel Corporation | Method for making a semiconductor device having an ultra-thin high-k gate dielectric |
| WO2005015621A1 (en) * | 2003-07-30 | 2005-02-17 | Infineon Technologies Ag | High-k dielectric film, method of forming the same and related semiconductor device |
| JP4654458B2 (ja) * | 2004-12-24 | 2011-03-23 | リコープリンティングシステムズ株式会社 | シリコン部材の陽極接合法及びこれを用いたインクジェットヘッド製造方法並びにインクジェットヘッド及びこれを用いたインクジェット記録装置 |
| JP5223771B2 (ja) * | 2009-05-08 | 2013-06-26 | 東京エレクトロン株式会社 | 成膜方法、ゲート電極構造の形成方法及び処理装置 |
| US8647723B2 (en) * | 2010-10-22 | 2014-02-11 | GM Global Technology Operations LLC | Nucleation of ultrathin, continuous, conformal metal films using atomic layer deposition and application as fuel cell catalysts |
| US8809152B2 (en) * | 2011-11-18 | 2014-08-19 | International Business Machines Corporation | Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devices |
| US9979028B2 (en) | 2013-12-13 | 2018-05-22 | GM Global Technology Operations LLC | Conformal thin film of precious metal on a support |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5861763A (ja) * | 1981-10-09 | 1983-04-12 | 武笠 均 | 触感知器消化装置 |
| US5393683A (en) * | 1992-05-26 | 1995-02-28 | Micron Technology, Inc. | Method of making semiconductor devices having two-layer gate structure |
| KR960005681B1 (ko) * | 1992-11-07 | 1996-04-30 | 금성일렉트론주식회사 | 반도체 메모리 장치의 캐패시터 제조방법 |
| US6088216A (en) * | 1995-04-28 | 2000-07-11 | International Business Machines Corporation | Lead silicate based capacitor structures |
| US6013553A (en) * | 1997-07-24 | 2000-01-11 | Texas Instruments Incorporated | Zirconium and/or hafnium oxynitride gate dielectric |
| US6841439B1 (en) * | 1997-07-24 | 2005-01-11 | Texas Instruments Incorporated | High permittivity silicate gate dielectric |
| US5834353A (en) * | 1997-10-20 | 1998-11-10 | Texas Instruments-Acer Incorporated | Method of making deep sub-micron meter MOSFET with a high permitivity gate dielectric |
| US6057584A (en) * | 1997-12-19 | 2000-05-02 | Advanced Micro Devices, Inc. | Semiconductor device having a tri-layer gate insulating dielectric |
| US6066519A (en) * | 1998-04-16 | 2000-05-23 | Advanced Micro Devices, Inc. | Semiconductor device having an outgassed oxide layer and fabrication thereof |
| US6245652B1 (en) * | 1998-09-04 | 2001-06-12 | Advanced Micro Devices, Inc. | Method of forming ultra thin gate dielectric for high performance semiconductor devices |
| KR100455737B1 (ko) * | 1998-12-30 | 2005-04-19 | 주식회사 하이닉스반도체 | 반도체소자의게이트산화막형성방법 |
| US6060755A (en) * | 1999-07-19 | 2000-05-09 | Sharp Laboratories Of America, Inc. | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same |
| US6248628B1 (en) * | 1999-10-25 | 2001-06-19 | Advanced Micro Devices | Method of fabricating an ONO dielectric by nitridation for MNOS memory cells |
| US6265268B1 (en) * | 1999-10-25 | 2001-07-24 | Advanced Micro Devices, Inc. | High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device |
| US6448127B1 (en) * | 2000-01-14 | 2002-09-10 | Advanced Micro Devices, Inc. | Process for formation of ultra-thin base oxide in high k/oxide stack gate dielectrics of mosfets |
| JP3383632B2 (ja) * | 2000-02-23 | 2003-03-04 | 沖電気工業株式会社 | Ｍｏｓトランジスタの製造方法 |
| US6677640B1 (en) * | 2000-03-01 | 2004-01-13 | Micron Technology, Inc. | Memory cell with tight coupling |
| US6320784B1 (en) * | 2000-03-14 | 2001-11-20 | Motorola, Inc. | Memory cell and method for programming thereof |
| US6649543B1 (en) * | 2000-06-22 | 2003-11-18 | Micron Technology, Inc. | Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices |
| US6551929B1 (en) * | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US6599781B1 (en) * | 2000-09-27 | 2003-07-29 | Chou H. Li | Solid state device |
| US6586334B2 (en) * | 2000-11-09 | 2003-07-01 | Texas Instruments Incorporated | Reducing copper line resistivity by smoothing trench and via sidewalls |
| JP2002170825A (ja) * | 2000-11-30 | 2002-06-14 | Nec Corp | 半導体装置及びｍｉｓ型半導体装置並びにその製造方法 |
| US6693051B2 (en) * | 2001-02-01 | 2004-02-17 | Lucent Technologies Inc. | Silicon oxide based gate dielectric layer |
| US6458661B1 (en) * | 2001-06-18 | 2002-10-01 | Macronix International Co., Ltd. | Method of forming NROM |
| KR100400252B1 (ko) * | 2001-06-29 | 2003-10-01 | 주식회사 하이닉스반도체 | 탄탈륨 옥사이드 캐퍼시터의 형성 방법 |
| US6548422B1 (en) * | 2001-09-27 | 2003-04-15 | Agere Systems, Inc. | Method and structure for oxide/silicon nitride interface substructure improvements |
| TW510048B (en) * | 2001-11-16 | 2002-11-11 | Macronix Int Co Ltd | Manufacturing method of non-volatile memory |
| US6790755B2 (en) * | 2001-12-27 | 2004-09-14 | Advanced Micro Devices, Inc. | Preparation of stack high-K gate dielectrics with nitrided layer |
| US6674138B1 (en) * | 2001-12-31 | 2004-01-06 | Advanced Micro Devices, Inc. | Use of high-k dielectric materials in modified ONO structure for semiconductor devices |
| US6586349B1 (en) * | 2002-02-21 | 2003-07-01 | Advanced Micro Devices, Inc. | Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices |
| US6797525B2 (en) * | 2002-05-22 | 2004-09-28 | Agere Systems Inc. | Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process |
-
2001
- 2001-02-01 US US09/773,442 patent/US20020102797A1/en not_active Abandoned
-
2002
- 2002-02-01 JP JP2002025036A patent/JP2002305303A/ja not_active Withdrawn
- 2002-08-23 US US10/227,091 patent/US7253063B2/en not_active Expired - Fee Related
-
2009
- 2009-03-17 JP JP2009063925A patent/JP2009177192A/ja active Pending
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