JP4007864B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4007864B2
JP4007864B2 JP2002181058A JP2002181058A JP4007864B2 JP 4007864 B2 JP4007864 B2 JP 4007864B2 JP 2002181058 A JP2002181058 A JP 2002181058A JP 2002181058 A JP2002181058 A JP 2002181058A JP 4007864 B2 JP4007864 B2 JP 4007864B2
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Prior art keywords
film
oxide film
hafnium oxide
high dielectric
silicon nitride
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Expired - Fee Related
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JP2002181058A
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Japanese (ja)
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JP2004031394A5 (enExample
JP2004031394A (ja
Inventor
清 入野
祐輔 森▲崎▼
義博 杉田
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Fujitsu Ltd
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Fujitsu Ltd
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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2002181058A 2002-06-21 2002-06-21 半導体装置の製造方法 Expired - Fee Related JP4007864B2 (ja)

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JP2002181058A JP4007864B2 (ja) 2002-06-21 2002-06-21 半導体装置の製造方法

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JP2002181058A JP4007864B2 (ja) 2002-06-21 2002-06-21 半導体装置の製造方法

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JP2004031394A JP2004031394A (ja) 2004-01-29
JP2004031394A5 JP2004031394A5 (enExample) 2005-10-13
JP4007864B2 true JP4007864B2 (ja) 2007-11-14

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JP2002181058A Expired - Fee Related JP4007864B2 (ja) 2002-06-21 2002-06-21 半導体装置の製造方法

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159316A (ja) * 2003-10-30 2005-06-16 Tokyo Electron Ltd 半導体装置の製造方法及び成膜装置並びに記憶媒体
JP2005236083A (ja) * 2004-02-20 2005-09-02 Toshiba Corp 半導体装置の製造方法
JP4966490B2 (ja) * 2004-11-15 2012-07-04 富士通セミコンダクター株式会社 半導体装置の製造方法
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
WO2012165263A1 (ja) * 2011-06-03 2012-12-06 東京エレクトロン株式会社 ゲート絶縁膜の形成方法およびゲート絶縁膜の形成装置
JP6218062B2 (ja) * 2012-08-24 2017-10-25 学校法人早稲田大学 電力素子、電力制御機器、電力素子の製造方法

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JP2004031394A (ja) 2004-01-29

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