JP2000286254A5 - - Google Patents

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Publication number
JP2000286254A5
JP2000286254A5 JP1999093871A JP9387199A JP2000286254A5 JP 2000286254 A5 JP2000286254 A5 JP 2000286254A5 JP 1999093871 A JP1999093871 A JP 1999093871A JP 9387199 A JP9387199 A JP 9387199A JP 2000286254 A5 JP2000286254 A5 JP 2000286254A5
Authority
JP
Japan
Prior art keywords
insulating film
integrated circuit
circuit device
semiconductor integrated
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999093871A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000286254A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11093871A priority Critical patent/JP2000286254A/ja
Priority claimed from JP11093871A external-priority patent/JP2000286254A/ja
Priority to TW089105602A priority patent/TW492111B/zh
Priority to KR1020000016051A priority patent/KR100787266B1/ko
Priority to US09/664,381 priority patent/US6509277B1/en
Publication of JP2000286254A publication Critical patent/JP2000286254A/ja
Priority to US10/303,935 priority patent/US6833331B2/en
Publication of JP2000286254A5 publication Critical patent/JP2000286254A5/ja
Pending legal-status Critical Current

Links

JP11093871A 1999-03-31 1999-03-31 半導体集積回路装置およびその製造方法 Pending JP2000286254A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11093871A JP2000286254A (ja) 1999-03-31 1999-03-31 半導体集積回路装置およびその製造方法
TW089105602A TW492111B (en) 1999-03-31 2000-03-27 Semiconductor integrated circuit device and manufacture thereof
KR1020000016051A KR100787266B1 (ko) 1999-03-31 2000-03-29 반도체 집적회로장치 및 그 제조방법
US09/664,381 US6509277B1 (en) 1999-03-31 2000-09-18 Method of manufacturing semiconductor integrated circuit device having insulatro film formed from liquid containing polymer of silicon, oxygen, and hydrogen
US10/303,935 US6833331B2 (en) 1999-03-31 2002-11-26 Method of manufacturing semiconductor integrated circuit device having insulating film formed from liquid substance containing polymer of silicon, oxygen, and hydrogen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11093871A JP2000286254A (ja) 1999-03-31 1999-03-31 半導体集積回路装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006239148A Division JP2007036267A (ja) 2006-09-04 2006-09-04 Ｓｏｇ膜の形成方法

Publications (2)

Publication Number Publication Date
JP2000286254A JP2000286254A (ja) 2000-10-13
JP2000286254A5 true JP2000286254A5 (enExample) 2005-03-17

Family

ID=14094535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11093871A Pending JP2000286254A (ja) 1999-03-31 1999-03-31 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (2) US6509277B1 (enExample)
JP (1) JP2000286254A (enExample)
KR (1) KR100787266B1 (enExample)
TW (1) TW492111B (enExample)

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US7291556B2 (en) * 2003-12-12 2007-11-06 Samsung Electronics Co., Ltd. Method for forming small features in microelectronic devices using sacrificial layers
US7223693B2 (en) * 2003-12-12 2007-05-29 Samsung Electronics Co., Ltd. Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same
US20070284743A1 (en) * 2003-12-12 2007-12-13 Samsung Electronics Co., Ltd. Fabricating Memory Devices Using Sacrificial Layers and Memory Devices Fabricated by Same
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US7332408B2 (en) * 2004-06-28 2008-02-19 Micron Technology, Inc. Isolation trenches for memory devices
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US20100015731A1 (en) * 2007-02-20 2010-01-21 Lam Research Corporation Method of low-k dielectric film repair
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KR100885895B1 (ko) * 2007-07-02 2009-02-26 삼성전자주식회사 반도체 장치의 제조 방법
JP2010171327A (ja) * 2009-01-26 2010-08-05 Toshiba Corp 半導体装置の製造方法
US8247332B2 (en) 2009-12-04 2012-08-21 Novellus Systems, Inc. Hardmask materials
US8951907B2 (en) * 2010-12-14 2015-02-10 GlobalFoundries, Inc. Semiconductor devices having through-contacts and related fabrication methods
US9337068B2 (en) 2012-12-18 2016-05-10 Lam Research Corporation Oxygen-containing ceramic hard masks and associated wet-cleans
TWI607510B (zh) * 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102246277B1 (ko) * 2014-03-14 2021-04-29 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
CN104952724B (zh) * 2014-03-31 2018-10-23 中芯国际集成电路制造(上海)有限公司 介电薄膜的后处理方法、互连层及半导体器件
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
CN116133436A (zh) * 2021-11-12 2023-05-16 联华电子股份有限公司 半导体元件及其制作方法
CN116801611A (zh) * 2022-03-15 2023-09-22 长鑫存储技术有限公司 存储器、半导体结构及其制备方法

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