JP2006517061A5 - - Google Patents
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- Publication number
- JP2006517061A5 JP2006517061A5 JP2006503315A JP2006503315A JP2006517061A5 JP 2006517061 A5 JP2006517061 A5 JP 2006517061A5 JP 2006503315 A JP2006503315 A JP 2006503315A JP 2006503315 A JP2006503315 A JP 2006503315A JP 2006517061 A5 JP2006517061 A5 JP 2006517061A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- porous low
- annealing
- porous
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 24
- 238000000137 annealing Methods 0.000 claims 11
- 238000000151 deposition Methods 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000011241 protective layer Substances 0.000 claims 2
- -1 Si 3 N 4 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910004200 TaSiN Inorganic materials 0.000 claims 1
- 229910008482 TiSiN Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910008807 WSiN Inorganic materials 0.000 claims 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 1
- 238000010923 batch production Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000002052 molecular layer Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/360,133 US6919101B2 (en) | 2003-02-04 | 2003-02-04 | Method to deposit an impermeable film on porous low-k dielectric film |
| PCT/US2004/003188 WO2004070794A2 (en) | 2003-02-04 | 2004-02-04 | Method to deposit an impermeable film onto a porous low-k dielectric film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006517061A JP2006517061A (ja) | 2006-07-13 |
| JP2006517061A5 true JP2006517061A5 (enExample) | 2007-03-22 |
Family
ID=32771366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006503315A Pending JP2006517061A (ja) | 2003-02-04 | 2004-02-04 | 多孔性低ｋ誘電体膜上への不透過性膜の堆積方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6919101B2 (enExample) |
| EP (1) | EP1599614A4 (enExample) |
| JP (1) | JP2006517061A (enExample) |
| KR (1) | KR20060058048A (enExample) |
| CN (1) | CN100476021C (enExample) |
| WO (1) | WO2004070794A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7081407B2 (en) * | 2003-12-16 | 2006-07-25 | Lam Research Corporation | Method of preventing damage to porous low-k materials during resist stripping |
| JP4279195B2 (ja) * | 2004-05-18 | 2009-06-17 | ソニー株式会社 | 半導体装置 |
| US20050272220A1 (en) * | 2004-06-07 | 2005-12-08 | Carlo Waldfried | Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications |
| US7396769B2 (en) * | 2004-08-02 | 2008-07-08 | Lam Research Corporation | Method for stripping photoresist from etched wafer |
| US7601246B2 (en) * | 2004-09-29 | 2009-10-13 | Lam Research Corporation | Methods of sputtering a protective coating on a semiconductor substrate |
| US7700438B2 (en) * | 2006-01-30 | 2010-04-20 | Freescale Semiconductor, Inc. | MOS device with nano-crystal gate structure |
| US8092861B2 (en) * | 2007-09-05 | 2012-01-10 | United Microelectronics Corp. | Method of fabricating an ultra dielectric constant (K) dielectric layer |
| KR101142334B1 (ko) * | 2009-06-04 | 2012-05-17 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그의 제조방법 |
| US8969132B2 (en) | 2010-09-20 | 2015-03-03 | Nuvotronics, Llc | Device package and methods for the fabrication thereof |
| CN102446813B (zh) * | 2010-10-13 | 2013-09-11 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的制作方法 |
| CN102446817B (zh) * | 2010-10-14 | 2013-11-06 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的制作方法 |
| US9018089B2 (en) * | 2011-08-30 | 2015-04-28 | International Business Machines Corporation | Multiple step anneal method and semiconductor formed by multiple step anneal |
| US9538958B2 (en) | 2012-03-16 | 2017-01-10 | Endotronix, Inc. | Permittivity shielding |
| US9337152B2 (en) | 2013-03-15 | 2016-05-10 | Nuvotronics, Inc | Formulation for packaging an electronic device and assemblies made therefrom |
| CN104073853A (zh) * | 2014-06-30 | 2014-10-01 | 上海交通大学 | 锂离子电池负极用硅氧碳复合物多孔电极的电沉积制备 |
| JP6576235B2 (ja) * | 2015-12-21 | 2019-09-18 | 東京エレクトロン株式会社 | Ｄｒａｍキャパシタの下部電極およびその製造方法 |
| JP6749225B2 (ja) * | 2016-12-06 | 2020-09-02 | 東京エレクトロン株式会社 | クリーニング方法 |
| WO2019020393A1 (en) * | 2017-07-27 | 2019-01-31 | Evatec Ag | Permeation-barrier |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5480678A (en) * | 1994-11-16 | 1996-01-02 | The B. F. Goodrich Company | Apparatus for use with CVI/CVD processes |
| JPH09275139A (ja) * | 1996-04-04 | 1997-10-21 | Sony Corp | 半導体装置の配線形成方法及びスパッタ装置 |
| JP3617283B2 (ja) * | 1997-11-10 | 2005-02-02 | ソニー株式会社 | 半導体装置の製造方法およびこれを用いた半導体装置 |
| US6171945B1 (en) * | 1998-10-22 | 2001-01-09 | Applied Materials, Inc. | CVD nanoporous silica low dielectric constant films |
| US6707544B1 (en) * | 1999-09-07 | 2004-03-16 | Applied Materials, Inc. | Particle detection and embedded vision system to enhance substrate yield and throughput |
| US6296906B1 (en) * | 1999-09-30 | 2001-10-02 | Novellus Systems, Inc. | Annealing process for low-k dielectric film |
| US6541367B1 (en) * | 2000-01-18 | 2003-04-01 | Applied Materials, Inc. | Very low dielectric constant plasma-enhanced CVD films |
| US6632478B2 (en) * | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
| US6750155B2 (en) * | 2001-08-08 | 2004-06-15 | Lam Research Corporation | Methods to minimize moisture condensation over a substrate in a rapid cycle chamber |
-
2003
- 2003-02-04 US US10/360,133 patent/US6919101B2/en not_active Expired - Lifetime
-
2004
- 2004-02-04 JP JP2006503315A patent/JP2006517061A/ja active Pending
- 2004-02-04 KR KR1020057014407A patent/KR20060058048A/ko not_active Ceased
- 2004-02-04 CN CNB2004800085625A patent/CN100476021C/zh not_active Expired - Fee Related
- 2004-02-04 EP EP04708170A patent/EP1599614A4/en not_active Withdrawn
- 2004-02-04 WO PCT/US2004/003188 patent/WO2004070794A2/en not_active Ceased
- 2004-10-12 US US10/963,192 patent/US20050084619A1/en not_active Abandoned
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