JP2009531857A5 - - Google Patents

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Publication number
JP2009531857A5
JP2009531857A5 JP2009502776A JP2009502776A JP2009531857A5 JP 2009531857 A5 JP2009531857 A5 JP 2009531857A5 JP 2009502776 A JP2009502776 A JP 2009502776A JP 2009502776 A JP2009502776 A JP 2009502776A JP 2009531857 A5 JP2009531857 A5 JP 2009531857A5
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JP
Japan
Prior art keywords
exposing
surface layer
low
film
dielectric film
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JP2009502776A
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English (en)
Japanese (ja)
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JP5271255B2 (ja
JP2009531857A (ja
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Priority claimed from US11/390,193 external-priority patent/US7795148B2/en
Application filed filed Critical
Publication of JP2009531857A publication Critical patent/JP2009531857A/ja
Publication of JP2009531857A5 publication Critical patent/JP2009531857A5/ja
Application granted granted Critical
Publication of JP5271255B2 publication Critical patent/JP5271255B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009502776A 2006-03-28 2007-01-30 損傷を受けた誘電材料の除去方法 Expired - Fee Related JP5271255B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/390,193 US7795148B2 (en) 2006-03-28 2006-03-28 Method for removing damaged dielectric material
US11/390,193 2006-03-28
PCT/US2007/002374 WO2007126461A2 (en) 2006-03-28 2007-01-30 Method for removing damaged dielectric material

Publications (3)

Publication Number Publication Date
JP2009531857A JP2009531857A (ja) 2009-09-03
JP2009531857A5 true JP2009531857A5 (enExample) 2010-03-11
JP5271255B2 JP5271255B2 (ja) 2013-08-21

Family

ID=38574058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009502776A Expired - Fee Related JP5271255B2 (ja) 2006-03-28 2007-01-30 損傷を受けた誘電材料の除去方法

Country Status (6)

Country Link
US (1) US7795148B2 (enExample)
JP (1) JP5271255B2 (enExample)
KR (1) KR101283837B1 (enExample)
CN (1) CN101454876B (enExample)
TW (1) TWI385728B (enExample)
WO (1) WO2007126461A2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4939864B2 (ja) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
US7786016B2 (en) * 2007-01-11 2010-08-31 Micron Technology, Inc. Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8382997B2 (en) * 2010-08-16 2013-02-26 Tokyo Electron Limited Method for high aspect ratio patterning in a spin-on layer
CN102420121B (zh) * 2011-05-26 2013-12-04 上海华力微电子有限公司 一种针对氟基等离子体刻蚀后的氮化钛薄膜的处理方法
CN102437037B (zh) * 2011-09-08 2014-06-04 上海华力微电子有限公司 一种有效减少水痕缺陷的方法
CN103094190B (zh) * 2011-11-01 2015-04-29 中芯国际集成电路制造(上海)有限公司 互连层中空气间隙的形成方法
US8809194B2 (en) 2012-03-07 2014-08-19 Tokyo Electron Limited Formation of SiOCl-containing layer on spacer sidewalls to prevent CD loss during spacer etch
US8551877B2 (en) 2012-03-07 2013-10-08 Tokyo Electron Limited Sidewall and chamfer protection during hard mask removal for interconnect patterning
US8592327B2 (en) 2012-03-07 2013-11-26 Tokyo Electron Limited Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damage
US8859430B2 (en) 2012-06-22 2014-10-14 Tokyo Electron Limited Sidewall protection of low-K material during etching and ashing
US8871639B2 (en) 2013-01-04 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
CN103646872A (zh) * 2013-11-26 2014-03-19 上海华力微电子有限公司 一种去胶设备
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
KR20230051311A (ko) 2014-09-12 2023-04-17 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱 장비 유출물의 처리를 위한 제어기
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10971372B2 (en) 2015-06-26 2021-04-06 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9984858B2 (en) 2015-09-04 2018-05-29 Lam Research Corporation ALE smoothness: in and outside semiconductor industry
FR3041471B1 (fr) 2015-09-18 2018-07-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation des espaceurs d'une grille d'un transistor
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US9837312B1 (en) 2016-07-22 2017-12-05 Lam Research Corporation Atomic layer etching for enhanced bottom-up feature fill
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US9997371B1 (en) 2017-04-24 2018-06-12 Lam Research Corporation Atomic layer etch methods and hardware for patterning applications
CN107845574B (zh) * 2017-10-31 2018-11-23 长鑫存储技术有限公司 半导体上刻蚀去除氧化物的方法
CN111937122A (zh) 2018-03-30 2020-11-13 朗姆研究公司 难熔金属和其他高表面结合能材料的原子层蚀刻和平滑化
US10982335B2 (en) * 2018-11-15 2021-04-20 Tokyo Electron Limited Wet atomic layer etching using self-limiting and solubility-limited reactions
CN110928142B (zh) * 2019-11-28 2023-08-29 北京遥测技术研究所 一种光刻厚胶与金属基底结合力的改善方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5685951A (en) * 1996-02-15 1997-11-11 Micron Technology, Inc. Methods and etchants for etching oxides of silicon with low selectivity in a vapor phase system
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US6627539B1 (en) 1998-05-29 2003-09-30 Newport Fab, Llc Method of forming dual-damascene interconnect structures employing low-k dielectric materials
JP3662472B2 (ja) * 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
US6451712B1 (en) * 2000-12-18 2002-09-17 International Business Machines Corporation Method for forming a porous dielectric material layer in a semiconductor device and device formed
US6541351B1 (en) * 2001-11-20 2003-04-01 International Business Machines Corporation Method for limiting divot formation in post shallow trench isolation processes
JP2003234402A (ja) * 2002-02-12 2003-08-22 Tokyo Electron Ltd 半導体製造方法及び半導体製造装置
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
US6951821B2 (en) * 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
TWI220774B (en) * 2003-11-03 2004-09-01 Univ Nat Sun Yat Sen Method for patterning low dielectric constant film and method for manufacturing dual damascene structure
US20050227494A1 (en) * 2004-03-30 2005-10-13 Tokyo Electron Limited Processing system and method for treating a substrate
US20050218113A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method and system for adjusting a chemical oxide removal process using partial pressure
US20050269291A1 (en) * 2004-06-04 2005-12-08 Tokyo Electron Limited Method of operating a processing system for treating a substrate
US7097779B2 (en) * 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
US7510972B2 (en) * 2005-02-14 2009-03-31 Tokyo Electron Limited Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device
JP4860219B2 (ja) * 2005-02-14 2012-01-25 東京エレクトロン株式会社 基板の処理方法、電子デバイスの製造方法及びプログラム
JP4515309B2 (ja) * 2005-03-31 2010-07-28 東京エレクトロン株式会社 エッチング方法
US20070031609A1 (en) * 2005-07-29 2007-02-08 Ajay Kumar Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same
US7214626B2 (en) * 2005-08-24 2007-05-08 United Microelectronics Corp. Etching process for decreasing mask defect
US7288483B1 (en) * 2006-03-28 2007-10-30 Tokyo Electron Limited Method and system for patterning a dielectric film
US20070238301A1 (en) * 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
US7368393B2 (en) * 2006-04-20 2008-05-06 International Business Machines Corporation Chemical oxide removal of plasma damaged SiCOH low k dielectrics
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
US7786016B2 (en) * 2007-01-11 2010-08-31 Micron Technology, Inc. Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide
KR101330707B1 (ko) * 2007-07-19 2013-11-19 삼성전자주식회사 반도체 장치의 형성 방법

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