JP2009531857A - 損傷を受けた誘電材料の除去方法 - Google Patents
損傷を受けた誘電材料の除去方法 Download PDFInfo
- Publication number
- JP2009531857A JP2009531857A JP2009502776A JP2009502776A JP2009531857A JP 2009531857 A JP2009531857 A JP 2009531857A JP 2009502776 A JP2009502776 A JP 2009502776A JP 2009502776 A JP2009502776 A JP 2009502776A JP 2009531857 A JP2009531857 A JP 2009531857A
- Authority
- JP
- Japan
- Prior art keywords
- exposing
- surface layer
- film
- substrate
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 150
- 239000003989 dielectric material Substances 0.000 title abstract description 6
- 230000008569 process Effects 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 43
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 239000000126 substance Substances 0.000 claims abstract description 28
- 238000004380 ashing Methods 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 86
- 239000010410 layer Substances 0.000 claims description 71
- 238000012545 processing Methods 0.000 claims description 70
- 239000002344 surface layer Substances 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 30
- 238000001020 plasma etching Methods 0.000 claims description 25
- 239000011261 inert gas Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000002156 adsorbate Substances 0.000 claims description 6
- 229910052756 noble gas Inorganic materials 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 150000001282 organosilanes Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 54
- 238000012993 chemical processing Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000002955 isolation Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 230000006378 damage Effects 0.000 description 11
- 238000000059 patterning Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000006117 anti-reflective coating Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052909 inorganic silicate Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 102100023698 C-C motif chemokine 17 Human genes 0.000 description 1
- 101000978362 Homo sapiens C-C motif chemokine 17 Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000003361 porogen Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
- C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
- C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (23)
- 基板上の誘電体膜を処理する方法であって、
当該方法は:
エッチングプラズマ、アッシングプラズマ、若しくは湿式洗浄化学物質、又は上記2以上の組合せに表面層が曝露された前記誘電体膜を有する前記基板を処理システム内に設ける工程;及び
前記誘電体膜上で非プラズマ除去プロセスを実行する工程;
を有し、
前記除去プロセスは:
前記表面層を化学的に変化させるためにHF、NH3、又はこれらの混合物を有する処理ガスに前記誘電体膜上の前記表面層を曝露する工程;並びに
前記の化学的に変化した表面層の吸着物を除去するため、前記の化学的に変化した表面層を熱処理する工程;
を有する、
方法。 - 前記曝露する工程が、1.6から2.7の範囲の誘電率を有する誘電体膜の表面層を曝露する工程を有する、請求項1に記載の方法。
- 前記曝露する工程が、有孔性誘電体膜若しくは非有孔性誘電体膜、又はこれらの混合誘電体膜の表面層を曝露する工程を有する、請求項1に記載の方法。
- 前記曝露する工程が、単相材料有孔性誘電体膜若しくは二相材料有孔性誘電体膜、又はこれらが混合した有孔性誘電体膜の表面層を曝露する工程を有する、請求項1に記載の方法。
- 前記曝露する工程が、有機材料若しくは無機材料、又はこれらの混合材料を有する膜の表面層を曝露する工程を有する、請求項1に記載の方法。
- 前記曝露する工程が、無機-有機ハイブリッド材料を有する膜の表面層を曝露する工程を有する、請求項5に記載の方法。
- 前記曝露する工程が、酸化オルガノシランを有する膜の表面層を曝露する工程を有する、請求項5に記載の方法。
- 前記曝露する工程が、水素シルセスキオキサン若しくはメチルシルセスキオキサン、又はこれらの混合物を有する膜の表面層を曝露する工程を有する、請求項5に記載の方法。
- 前記曝露する工程が、シリケートベースの材料を有する膜の表面層を曝露する工程を有する、請求項5に記載の方法。
- 前記曝露する工程が、シリコン、炭素、及び酸素を有する複合膜の表面層を曝露する工程を有する、請求項5に記載の方法。
- 前記曝露する工程が、さらに水素を有する前記複合膜の表面層を曝露する工程を有する、請求項10に記載の方法。
- 前記曝露する工程が、約1mTorrから約100Torrの範囲のプロセス圧力で実行される、請求項1に記載の方法。
- 前記曝露する工程が、前記基板温度を約10℃から約200℃の範囲の温度に維持したまま実行される、請求項1に記載の方法。
- 前記曝露する工程が、さらに不活性ガスを有する処理ガスに前記基板を曝露する工程を有する、請求項1に記載の方法。
- 前記曝露する工程が、さらに希ガスを有する処理ガスに前記基板を曝露する工程を有する、請求項14に記載の方法。
- 前記熱処理する工程が前記基板の温度を約50℃よりも高い温度に昇温する工程を有する、請求項1に記載の方法。
- 前記熱処理する工程が前記基板の温度を約100℃よりも高い温度に昇温する工程を有する、請求項1に記載の方法。
- 前記熱処理する工程が、不活性ガスを導入する工程中に実行される、請求項17に記載の方法。
- 前記導入する工程が窒素を導入する工程をさらに有する、請求項18に記載の方法。
- 基板上に形成されるlow-k膜内に特徴部位を形成する方法であって:
上に前記low-k膜を有する前記基板をプロセスチャンバ内に設ける工程;
前記low-k膜内に形成されるlow-k特徴部位に相当するパターン特徴部位を有するマスクパターンを前記low-k膜上に形成する工程;
ドライプラズマエッチングプロセスを用いて前記のlow-k膜内に形成されるlow-k特徴部位をエッチングする工程;並びに
前記low-k特徴部位上で乾式の非プラズマエッチングプロセスを実行して、前記プラズマエッチングプロセスによって損傷を受ける、及び/又は活性化する前記low-k特徴部位の表面層を除去する工程;
を有する方法。 - 前記形成する工程が、前記ドライプラズマ除去プロセスを補償するため、前記low-k特徴部位の限界寸法未満の限界寸法を有するマスクパターンを形成する工程を有する、請求項20に記載の方法。
- 前記low-k特徴部位が、相互接続ビア、若しくはワイヤとなる溝、又は上記の組合せを有する、請求項21に記載の方法。
- 前記の乾式の非プラズマエッチングプロセスを実行する工程が:
前記表面層を化学的に変化させるため、HF、若しくはNH3、又は上記の混合物を有する処理ガスに前記low-k特徴部位上の表面層を曝露する工程;及び
前記の化学的に変化した表面層の吸着物を除去するため、前記の化学的に変化した表面層を熱処理する工程;
を有する、
請求項22に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/390,193 US7795148B2 (en) | 2006-03-28 | 2006-03-28 | Method for removing damaged dielectric material |
US11/390,193 | 2006-03-28 | ||
PCT/US2007/002374 WO2007126461A2 (en) | 2006-03-28 | 2007-01-30 | Method for removing damaged dielectric material |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009531857A true JP2009531857A (ja) | 2009-09-03 |
JP2009531857A5 JP2009531857A5 (ja) | 2010-03-11 |
JP5271255B2 JP5271255B2 (ja) | 2013-08-21 |
Family
ID=38574058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009502776A Expired - Fee Related JP5271255B2 (ja) | 2006-03-28 | 2007-01-30 | 損傷を受けた誘電材料の除去方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7795148B2 (ja) |
JP (1) | JP5271255B2 (ja) |
KR (1) | KR101283837B1 (ja) |
CN (1) | CN101454876B (ja) |
TW (1) | TWI385728B (ja) |
WO (1) | WO2007126461A2 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4939864B2 (ja) * | 2006-07-25 | 2012-05-30 | 東京エレクトロン株式会社 | ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
US7786016B2 (en) * | 2007-01-11 | 2010-08-31 | Micron Technology, Inc. | Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide |
US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
US8382997B2 (en) * | 2010-08-16 | 2013-02-26 | Tokyo Electron Limited | Method for high aspect ratio patterning in a spin-on layer |
CN102420121B (zh) * | 2011-05-26 | 2013-12-04 | 上海华力微电子有限公司 | 一种针对氟基等离子体刻蚀后的氮化钛薄膜的处理方法 |
CN102437037B (zh) * | 2011-09-08 | 2014-06-04 | 上海华力微电子有限公司 | 一种有效减少水痕缺陷的方法 |
CN103094190B (zh) * | 2011-11-01 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 互连层中空气间隙的形成方法 |
US8592327B2 (en) | 2012-03-07 | 2013-11-26 | Tokyo Electron Limited | Formation of SiOCl-containing layer on exposed low-k surfaces to reduce low-k damage |
US8551877B2 (en) | 2012-03-07 | 2013-10-08 | Tokyo Electron Limited | Sidewall and chamfer protection during hard mask removal for interconnect patterning |
US8809194B2 (en) | 2012-03-07 | 2014-08-19 | Tokyo Electron Limited | Formation of SiOCl-containing layer on spacer sidewalls to prevent CD loss during spacer etch |
US8859430B2 (en) | 2012-06-22 | 2014-10-14 | Tokyo Electron Limited | Sidewall protection of low-K material during etching and ashing |
US8871639B2 (en) * | 2013-01-04 | 2014-10-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacture thereof |
CN103646872A (zh) * | 2013-11-26 | 2014-03-19 | 上海华力微电子有限公司 | 一种去胶设备 |
US9508561B2 (en) | 2014-03-11 | 2016-11-29 | Applied Materials, Inc. | Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications |
JP6811709B2 (ja) | 2014-09-12 | 2021-01-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 半導体プロセシング装置放出物の処理のためのコントローラ |
US9576811B2 (en) | 2015-01-12 | 2017-02-21 | Lam Research Corporation | Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch) |
US9806252B2 (en) * | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
TWI610361B (zh) | 2015-06-26 | 2018-01-01 | 東京威力科創股份有限公司 | 具有可控制的含矽抗反射塗層或矽氮氧化物相對於不同薄膜或遮罩之蝕刻選擇性的氣相蝕刻 |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
FR3041471B1 (fr) * | 2015-09-18 | 2018-07-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation des espaceurs d'une grille d'un transistor |
US10229837B2 (en) | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
US10727073B2 (en) | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
US9837312B1 (en) | 2016-07-22 | 2017-12-05 | Lam Research Corporation | Atomic layer etching for enhanced bottom-up feature fill |
US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
US9997371B1 (en) | 2017-04-24 | 2018-06-12 | Lam Research Corporation | Atomic layer etch methods and hardware for patterning applications |
CN107845574B (zh) * | 2017-10-31 | 2018-11-23 | 长鑫存储技术有限公司 | 半导体上刻蚀去除氧化物的方法 |
CN111937122A (zh) | 2018-03-30 | 2020-11-13 | 朗姆研究公司 | 难熔金属和其他高表面结合能材料的原子层蚀刻和平滑化 |
US10982335B2 (en) * | 2018-11-15 | 2021-04-20 | Tokyo Electron Limited | Wet atomic layer etching using self-limiting and solubility-limited reactions |
CN110928142B (zh) * | 2019-11-28 | 2023-08-29 | 北京遥测技术研究所 | 一种光刻厚胶与金属基底结合力的改善方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005062344A1 (en) * | 2003-12-17 | 2005-07-07 | Tokyo Electron Limited | Method of operating a system for chemical oxide removal |
WO2005104216A2 (en) * | 2004-03-30 | 2005-11-03 | Tokyo Electron Limited | Processing system and method for treating a substrate |
WO2005122215A1 (en) * | 2004-06-04 | 2005-12-22 | Tokyo Electron Limited | Method of operating a processing system for treating a substrate |
JP2006521017A (ja) * | 2003-03-17 | 2006-09-14 | 東京エレクトロン株式会社 | 基板を化学的処理する処理システムおよび方法 |
JP2006253634A (ja) * | 2005-02-14 | 2006-09-21 | Tokyo Electron Ltd | 基板の処理方法、電子デバイスの製造方法及びプログラム |
JP2006523379A (ja) * | 2003-03-17 | 2006-10-12 | 東京エレクトロン株式会社 | 基板を処理する処理システムおよび方法 |
JP2006286775A (ja) * | 2005-03-31 | 2006-10-19 | Tokyo Electron Ltd | エッチング方法 |
JP2007531306A (ja) * | 2004-03-30 | 2007-11-01 | 東京エレクトロン株式会社 | 分圧を使用して化学的酸化物除去プロセスを調整するための方法およびシステム |
JP2008506255A (ja) * | 2004-07-06 | 2008-02-28 | 東京エレクトロン株式会社 | Tera層を化学処理するための処理システムおよび方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5685951A (en) * | 1996-02-15 | 1997-11-11 | Micron Technology, Inc. | Methods and etchants for etching oxides of silicon with low selectivity in a vapor phase system |
US5838055A (en) * | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
US6627539B1 (en) * | 1998-05-29 | 2003-09-30 | Newport Fab, Llc | Method of forming dual-damascene interconnect structures employing low-k dielectric materials |
JP3662472B2 (ja) * | 2000-05-09 | 2005-06-22 | エム・エフエスアイ株式会社 | 基板表面の処理方法 |
US6451712B1 (en) * | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
US6541351B1 (en) * | 2001-11-20 | 2003-04-01 | International Business Machines Corporation | Method for limiting divot formation in post shallow trench isolation processes |
JP2003234402A (ja) * | 2002-02-12 | 2003-08-22 | Tokyo Electron Ltd | 半導体製造方法及び半導体製造装置 |
US6858532B2 (en) * | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
TWI220774B (en) * | 2003-11-03 | 2004-09-01 | Univ Nat Sun Yat Sen | Method for patterning low dielectric constant film and method for manufacturing dual damascene structure |
US7510972B2 (en) * | 2005-02-14 | 2009-03-31 | Tokyo Electron Limited | Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device |
US20070031609A1 (en) * | 2005-07-29 | 2007-02-08 | Ajay Kumar | Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same |
US7214626B2 (en) * | 2005-08-24 | 2007-05-08 | United Microelectronics Corp. | Etching process for decreasing mask defect |
US20070238301A1 (en) * | 2006-03-28 | 2007-10-11 | Cabral Stephen H | Batch processing system and method for performing chemical oxide removal |
US7288483B1 (en) * | 2006-03-28 | 2007-10-30 | Tokyo Electron Limited | Method and system for patterning a dielectric film |
US7368393B2 (en) * | 2006-04-20 | 2008-05-06 | International Business Machines Corporation | Chemical oxide removal of plasma damaged SiCOH low k dielectrics |
US7718032B2 (en) * | 2006-06-22 | 2010-05-18 | Tokyo Electron Limited | Dry non-plasma treatment system and method of using |
US7786016B2 (en) * | 2007-01-11 | 2010-08-31 | Micron Technology, Inc. | Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide |
KR101330707B1 (ko) * | 2007-07-19 | 2013-11-19 | 삼성전자주식회사 | 반도체 장치의 형성 방법 |
-
2006
- 2006-03-28 US US11/390,193 patent/US7795148B2/en not_active Expired - Fee Related
-
2007
- 2007-01-30 JP JP2009502776A patent/JP5271255B2/ja not_active Expired - Fee Related
- 2007-01-30 CN CN2007800197431A patent/CN101454876B/zh not_active Expired - Fee Related
- 2007-01-30 KR KR1020087026229A patent/KR101283837B1/ko not_active IP Right Cessation
- 2007-01-30 WO PCT/US2007/002374 patent/WO2007126461A2/en active Application Filing
- 2007-03-27 TW TW096110561A patent/TWI385728B/zh not_active IP Right Cessation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006521017A (ja) * | 2003-03-17 | 2006-09-14 | 東京エレクトロン株式会社 | 基板を化学的処理する処理システムおよび方法 |
JP2006523379A (ja) * | 2003-03-17 | 2006-10-12 | 東京エレクトロン株式会社 | 基板を処理する処理システムおよび方法 |
WO2005062344A1 (en) * | 2003-12-17 | 2005-07-07 | Tokyo Electron Limited | Method of operating a system for chemical oxide removal |
WO2005104216A2 (en) * | 2004-03-30 | 2005-11-03 | Tokyo Electron Limited | Processing system and method for treating a substrate |
JP2007531306A (ja) * | 2004-03-30 | 2007-11-01 | 東京エレクトロン株式会社 | 分圧を使用して化学的酸化物除去プロセスを調整するための方法およびシステム |
WO2005122215A1 (en) * | 2004-06-04 | 2005-12-22 | Tokyo Electron Limited | Method of operating a processing system for treating a substrate |
JP2008506255A (ja) * | 2004-07-06 | 2008-02-28 | 東京エレクトロン株式会社 | Tera層を化学処理するための処理システムおよび方法 |
JP2006253634A (ja) * | 2005-02-14 | 2006-09-21 | Tokyo Electron Ltd | 基板の処理方法、電子デバイスの製造方法及びプログラム |
JP2006286775A (ja) * | 2005-03-31 | 2006-10-19 | Tokyo Electron Ltd | エッチング方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2007126461A2 (en) | 2007-11-08 |
US20070235411A1 (en) | 2007-10-11 |
TWI385728B (zh) | 2013-02-11 |
TW200802603A (en) | 2008-01-01 |
CN101454876A (zh) | 2009-06-10 |
WO2007126461A3 (en) | 2008-08-14 |
JP5271255B2 (ja) | 2013-08-21 |
KR101283837B1 (ko) | 2013-07-08 |
CN101454876B (zh) | 2011-07-27 |
US7795148B2 (en) | 2010-09-14 |
KR20080109886A (ko) | 2008-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5271255B2 (ja) | 損傷を受けた誘電材料の除去方法 | |
US7723237B2 (en) | Method for selective removal of damaged multi-stack bilayer films | |
TWI488239B (zh) | 互連線結構中之絕緣介電質的覆蓋層之移除方法 | |
US7083991B2 (en) | Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments | |
TWI654683B (zh) | 蝕刻雙鑲嵌結構中的介電阻隔層之方法 | |
US7541200B1 (en) | Treatment of low k films with a silylating agent for damage repair | |
US7611986B2 (en) | Dual damascene patterning method | |
US7288483B1 (en) | Method and system for patterning a dielectric film | |
KR101143727B1 (ko) | 반도체 장치의 제조 방법 및 기억 매체 | |
EP1209728A2 (en) | Method of depositing organosilicate layers | |
JP4999419B2 (ja) | 基板処理方法および基板処理システム、ならびにコンピュータ読取可能な記憶媒体 | |
JP2009010043A (ja) | 基板処理方法,基板処理装置,記録媒体 | |
US8288252B2 (en) | Method for recovering damaged components in lower region of low dielectric insulating film | |
US6713386B1 (en) | Method of preventing resist poisoning in dual damascene structures | |
EP1646083B1 (en) | Alternative dual damascene patterning approach | |
JP4586626B2 (ja) | エッチング方法および半導体装置の製造方法 | |
JP2006059848A (ja) | レジスト除去方法及び半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100121 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120905 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120911 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121112 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130408 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130430 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130510 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |