CN100476021C - 将不渗透膜沉积到多孔低介电常数介电膜上的方法 - Google Patents

将不渗透膜沉积到多孔低介电常数介电膜上的方法 Download PDF

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Publication number
CN100476021C
CN100476021C CNB2004800085625A CN200480008562A CN100476021C CN 100476021 C CN100476021 C CN 100476021C CN B2004800085625 A CNB2004800085625 A CN B2004800085625A CN 200480008562 A CN200480008562 A CN 200480008562A CN 100476021 C CN100476021 C CN 100476021C
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China
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porous
dielectric film
porous low
film
annealing
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Expired - Fee Related
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English (en)
Chinese (zh)
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CN1768160A (zh
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张志宏
泰·D·古延
图·古延
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CollabRx Inc
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CollabRx Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
CNB2004800085625A 2003-02-04 2004-02-04 将不渗透膜沉积到多孔低介电常数介电膜上的方法 Expired - Fee Related CN100476021C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/360,133 US6919101B2 (en) 2003-02-04 2003-02-04 Method to deposit an impermeable film on porous low-k dielectric film
US10/360,133 2003-02-04

Publications (2)

Publication Number Publication Date
CN1768160A CN1768160A (zh) 2006-05-03
CN100476021C true CN100476021C (zh) 2009-04-08

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CNB2004800085625A Expired - Fee Related CN100476021C (zh) 2003-02-04 2004-02-04 将不渗透膜沉积到多孔低介电常数介电膜上的方法

Country Status (6)

Country Link
US (2) US6919101B2 (enExample)
EP (1) EP1599614A4 (enExample)
JP (1) JP2006517061A (enExample)
KR (1) KR20060058048A (enExample)
CN (1) CN100476021C (enExample)
WO (1) WO2004070794A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102446813A (zh) * 2010-10-13 2012-05-09 中芯国际集成电路制造(上海)有限公司 互连结构的制作方法

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US7081407B2 (en) * 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
JP4279195B2 (ja) * 2004-05-18 2009-06-17 ソニー株式会社 半導体装置
US20050272220A1 (en) * 2004-06-07 2005-12-08 Carlo Waldfried Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
US7396769B2 (en) * 2004-08-02 2008-07-08 Lam Research Corporation Method for stripping photoresist from etched wafer
US7601246B2 (en) * 2004-09-29 2009-10-13 Lam Research Corporation Methods of sputtering a protective coating on a semiconductor substrate
US7700438B2 (en) * 2006-01-30 2010-04-20 Freescale Semiconductor, Inc. MOS device with nano-crystal gate structure
US8092861B2 (en) * 2007-09-05 2012-01-10 United Microelectronics Corp. Method of fabricating an ultra dielectric constant (K) dielectric layer
KR101142334B1 (ko) * 2009-06-04 2012-05-17 에스케이하이닉스 주식회사 반도체 소자 및 그의 제조방법
US8969132B2 (en) 2010-09-20 2015-03-03 Nuvotronics, Llc Device package and methods for the fabrication thereof
CN102446817B (zh) * 2010-10-14 2013-11-06 中芯国际集成电路制造(上海)有限公司 互连结构的制作方法
US9018089B2 (en) * 2011-08-30 2015-04-28 International Business Machines Corporation Multiple step anneal method and semiconductor formed by multiple step anneal
JP2015516826A (ja) * 2012-03-16 2015-06-18 バイタル センサーズ ホールディング カンパニー， インク．Ｖｉｔａｌ Ｓｅｎｓｏｒｓ Ｈｏｌｄｉｎｇ Ｃｏｍｐａｎｙ， Ｉｎｃ． 誘電率遮蔽
US9337152B2 (en) 2013-03-15 2016-05-10 Nuvotronics, Inc Formulation for packaging an electronic device and assemblies made therefrom
CN104073853A (zh) * 2014-06-30 2014-10-01 上海交通大学 锂离子电池负极用硅氧碳复合物多孔电极的电沉积制备
JP6576235B2 (ja) * 2015-12-21 2019-09-18 東京エレクトロン株式会社 Ｄｒａｍキャパシタの下部電極およびその製造方法
JP6749225B2 (ja) * 2016-12-06 2020-09-02 東京エレクトロン株式会社 クリーニング方法
TWI770226B (zh) * 2017-07-27 2022-07-11 瑞士商艾維太克股份有限公司 層沉積設備及在起始基板上提供滲透阻障層系統或製造設置有表面滲透阻障層系統的基板的方法

Citations (2)

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CN1170442A (zh) * 1994-11-16 1998-01-14 B·F·谷德里奇公司 化学蒸汽渗透和沉积工艺用的设备
US6171945B1 (en) * 1998-10-22 2001-01-09 Applied Materials, Inc. CVD nanoporous silica low dielectric constant films

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JPH09275139A (ja) * 1996-04-04 1997-10-21 Sony Corp 半導体装置の配線形成方法及びスパッタ装置
JP3617283B2 (ja) * 1997-11-10 2005-02-02 ソニー株式会社 半導体装置の製造方法およびこれを用いた半導体装置
US6707544B1 (en) * 1999-09-07 2004-03-16 Applied Materials, Inc. Particle detection and embedded vision system to enhance substrate yield and throughput
US6296906B1 (en) * 1999-09-30 2001-10-02 Novellus Systems, Inc. Annealing process for low-k dielectric film
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6632478B2 (en) * 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
US6750155B2 (en) * 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1170442A (zh) * 1994-11-16 1998-01-14 B·F·谷德里奇公司 化学蒸汽渗透和沉积工艺用的设备
US6171945B1 (en) * 1998-10-22 2001-01-09 Applied Materials, Inc. CVD nanoporous silica low dielectric constant films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102446813A (zh) * 2010-10-13 2012-05-09 中芯国际集成电路制造(上海)有限公司 互连结构的制作方法
CN102446813B (zh) * 2010-10-13 2013-09-11 中芯国际集成电路制造(上海)有限公司 互连结构的制作方法

Also Published As

Publication number Publication date
WO2004070794A2 (en) 2004-08-19
CN1768160A (zh) 2006-05-03
WO2004070794A3 (en) 2004-10-21
KR20060058048A (ko) 2006-05-29
US20040149686A1 (en) 2004-08-05
JP2006517061A (ja) 2006-07-13
EP1599614A2 (en) 2005-11-30
US20050084619A1 (en) 2005-04-21
WO2004070794B1 (en) 2005-09-15
EP1599614A4 (en) 2008-04-09
US6919101B2 (en) 2005-07-19

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