JP2003523624A5 - - Google Patents

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Publication number
JP2003523624A5
JP2003523624A5 JP2001560432A JP2001560432A JP2003523624A5 JP 2003523624 A5 JP2003523624 A5 JP 2003523624A5 JP 2001560432 A JP2001560432 A JP 2001560432A JP 2001560432 A JP2001560432 A JP 2001560432A JP 2003523624 A5 JP2003523624 A5 JP 2003523624A5
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JP
Japan
Prior art keywords
layer
substrate
dielectric
electron beam
precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001560432A
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English (en)
Japanese (ja)
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JP2003523624A (ja
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Publication date
Priority claimed from US09/506,515 external-priority patent/US6582777B1/en
Application filed filed Critical
Publication of JP2003523624A publication Critical patent/JP2003523624A/ja
Publication of JP2003523624A5 publication Critical patent/JP2003523624A5/ja
Pending legal-status Critical Current

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JP2001560432A 2000-02-17 2001-02-02 Ｃｖｄ蒸着膜の電子ビーム改質による低誘電率材料の形成 Pending JP2003523624A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/506,515 US6582777B1 (en) 2000-02-17 2000-02-17 Electron beam modification of CVD deposited low dielectric constant materials
US09/506,515 2000-02-17
PCT/US2001/003440 WO2001061737A1 (en) 2000-02-17 2001-02-02 Electron beam modification of cvd deposited films, forming low dielectric constant materials

Publications (2)

Publication Number Publication Date
JP2003523624A JP2003523624A (ja) 2003-08-05
JP2003523624A5 true JP2003523624A5 (enExample) 2008-03-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001560432A Pending JP2003523624A (ja) 2000-02-17 2001-02-02 Ｃｖｄ蒸着膜の電子ビーム改質による低誘電率材料の形成

Country Status (5)

Country Link
US (3) US6582777B1 (enExample)
EP (1) EP1256125A1 (enExample)
JP (1) JP2003523624A (enExample)
KR (1) KR20020075412A (enExample)
WO (1) WO2001061737A1 (enExample)

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