JP2011003859A5 - - Google Patents
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- Publication number
- JP2011003859A5 JP2011003859A5 JP2009148054A JP2009148054A JP2011003859A5 JP 2011003859 A5 JP2011003859 A5 JP 2011003859A5 JP 2009148054 A JP2009148054 A JP 2009148054A JP 2009148054 A JP2009148054 A JP 2009148054A JP 2011003859 A5 JP2011003859 A5 JP 2011003859A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- wiring
- manufacturing
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 29
- 238000004519 manufacturing process Methods 0.000 claims 19
- 230000001681 protective effect Effects 0.000 claims 16
- 239000010410 layer Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 5
- 150000002291 germanium compounds Chemical class 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 239000000470 constituent Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 150000003377 silicon compounds Chemical class 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 239000003353 gold alloy Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 229910000531 Co alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 1
- 150000002830 nitrogen compounds Chemical class 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009148054A JP5230542B2 (ja) | 2009-06-22 | 2009-06-22 | 半導体装置の製造方法 |
| PCT/JP2010/000444 WO2010150430A1 (ja) | 2009-06-22 | 2010-01-27 | 半導体装置及びその製造方法 |
| US13/274,039 US8927416B2 (en) | 2009-06-22 | 2011-10-14 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009148054A JP5230542B2 (ja) | 2009-06-22 | 2009-06-22 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011003859A JP2011003859A (ja) | 2011-01-06 |
| JP2011003859A5 true JP2011003859A5 (enExample) | 2011-08-18 |
| JP5230542B2 JP5230542B2 (ja) | 2013-07-10 |
Family
ID=43386221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009148054A Expired - Fee Related JP5230542B2 (ja) | 2009-06-22 | 2009-06-22 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8927416B2 (enExample) |
| JP (1) | JP5230542B2 (enExample) |
| WO (1) | WO2010150430A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160276156A1 (en) * | 2015-03-16 | 2016-09-22 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing process thereof |
| US9673091B2 (en) * | 2015-06-25 | 2017-06-06 | Globalfoundries Inc. | Structure for BEOL metal levels with multiple dielectric layers for improved dielectric to metal adhesion |
| DE102019131408B4 (de) | 2019-06-28 | 2025-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Verbesserte Kontaktierung von Metallleitungen bei Fehlausrichtung von BEOL-Durchkontaktierungen |
| CN112151497B (zh) * | 2019-06-28 | 2023-08-22 | 台湾积体电路制造股份有限公司 | 半导体结构以及形成半导体结构的方法 |
| US12272600B2 (en) * | 2022-01-12 | 2025-04-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contact features of semiconductor device and method of forming same |
| CN115732405A (zh) * | 2022-09-20 | 2023-03-03 | 长鑫存储技术有限公司 | 半导体结构的形成方法及半导体结构 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980042910A (ko) | 1996-11-29 | 1998-08-17 | 윌리엄비.켐플러 | 동 표면의 밀봉을 위한 공정 |
| US6448655B1 (en) * | 1998-04-28 | 2002-09-10 | International Business Machines Corporation | Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation |
| JP2000058544A (ja) * | 1998-08-04 | 2000-02-25 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
| JP4535629B2 (ja) * | 2001-02-21 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP4063619B2 (ja) * | 2002-03-13 | 2008-03-19 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US20050250346A1 (en) * | 2004-05-06 | 2005-11-10 | Applied Materials, Inc. | Process and apparatus for post deposition treatment of low k dielectric materials |
| KR100703973B1 (ko) | 2005-07-20 | 2007-04-06 | 삼성전자주식회사 | 이중 캡핑막을 갖는 반도체 소자의 배선 및 그 형성 방법 |
| JP2009016502A (ja) * | 2007-07-03 | 2009-01-22 | Tdk Corp | ワイヤ被膜剥離方法、コイル部品の製造方法、ワイヤ被膜剥離装置およびコイル部品の製造装置 |
| JP2009016520A (ja) * | 2007-07-04 | 2009-01-22 | Tokyo Electron Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
-
2009
- 2009-06-22 JP JP2009148054A patent/JP5230542B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-27 WO PCT/JP2010/000444 patent/WO2010150430A1/ja not_active Ceased
-
2011
- 2011-10-14 US US13/274,039 patent/US8927416B2/en active Active
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