JP2008160095A5 - - Google Patents

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Publication number
JP2008160095A5
JP2008160095A5 JP2007307170A JP2007307170A JP2008160095A5 JP 2008160095 A5 JP2008160095 A5 JP 2008160095A5 JP 2007307170 A JP2007307170 A JP 2007307170A JP 2007307170 A JP2007307170 A JP 2007307170A JP 2008160095 A5 JP2008160095 A5 JP 2008160095A5
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JP
Japan
Prior art keywords
layer
substrate
electrode layer
electrode
organic compound
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JP2007307170A
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English (en)
Japanese (ja)
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JP5259160B2 (ja
JP2008160095A (ja
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Priority to JP2007307170A priority Critical patent/JP5259160B2/ja
Priority claimed from JP2007307170A external-priority patent/JP5259160B2/ja
Publication of JP2008160095A publication Critical patent/JP2008160095A/ja
Publication of JP2008160095A5 publication Critical patent/JP2008160095A5/ja
Application granted granted Critical
Publication of JP5259160B2 publication Critical patent/JP5259160B2/ja
Expired - Fee Related legal-status Critical Current
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JP2007307170A 2006-11-29 2007-11-28 半導体装置の作製方法 Expired - Fee Related JP5259160B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007307170A JP5259160B2 (ja) 2006-11-29 2007-11-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006321032 2006-11-29
JP2006321032 2006-11-29
JP2007307170A JP5259160B2 (ja) 2006-11-29 2007-11-28 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013009850A Division JP5809651B2 (ja) 2006-11-29 2013-01-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2008160095A JP2008160095A (ja) 2008-07-10
JP2008160095A5 true JP2008160095A5 (enExample) 2010-10-21
JP5259160B2 JP5259160B2 (ja) 2013-08-07

Family

ID=39467881

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007307170A Expired - Fee Related JP5259160B2 (ja) 2006-11-29 2007-11-28 半導体装置の作製方法
JP2013009850A Expired - Fee Related JP5809651B2 (ja) 2006-11-29 2013-01-23 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013009850A Expired - Fee Related JP5809651B2 (ja) 2006-11-29 2013-01-23 半導体装置

Country Status (6)

Country Link
US (1) US7712676B2 (enExample)
EP (1) EP2084745A4 (enExample)
JP (2) JP5259160B2 (enExample)
CN (1) CN101529596B (enExample)
TW (1) TWI446529B (enExample)
WO (1) WO2008066091A1 (enExample)

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* Cited by examiner, † Cited by third party
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CN101305465B (zh) * 2005-11-09 2010-06-09 株式会社半导体能源研究所 半导体器件及其制造方法
JP5121432B2 (ja) * 2007-12-11 2013-01-16 キヤノン株式会社 液晶表示装置及びその製造方法並びに液晶プロジェクション装置
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
WO2011013275A1 (ja) * 2009-07-28 2011-02-03 シャープ株式会社 有機素子及びそれを備えた有機デバイス
US20120255607A1 (en) * 2009-11-18 2012-10-11 The Trustees Of Princeton University Semiconductor coated microporous graphene scaffolds
TWI429090B (zh) * 2010-05-21 2014-03-01 國立成功大學 Crystal element and manufacturing method thereof
JP2011249556A (ja) * 2010-05-27 2011-12-08 Panasonic Corp 半導体レーザ装置及びその製造方法
KR20120042151A (ko) * 2010-10-22 2012-05-03 삼성모바일디스플레이주식회사 플렉서블 디스플레이 장치의 제조 방법
US8957462B2 (en) * 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
JP5621690B2 (ja) * 2011-03-31 2014-11-12 富士通株式会社 電子装置及びフレキシブル基板
US9001564B2 (en) 2011-06-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for driving the same
WO2014165225A1 (en) * 2013-03-12 2014-10-09 New Jersey Institute Of Technology System and method for thin film photovoltaic modules and back contact for thin film solar cells
TWI695525B (zh) * 2014-07-25 2020-06-01 日商半導體能源研究所股份有限公司 剝離方法、發光裝置、模組以及電子裝置
JP2016224297A (ja) * 2015-06-01 2016-12-28 株式会社ジャパンディスプレイ 表示装置
US10374093B2 (en) 2016-12-08 2019-08-06 Electronics And Telecommunications Research Institute Method of fabricating a flexible substrate and the flexible substrate fabricated thereby
TWI678772B (zh) * 2017-04-28 2019-12-01 矽品精密工業股份有限公司 電子封裝件及其製法
KR102750779B1 (ko) * 2019-04-25 2025-01-06 가부시끼가이샤 레조낙 돌멘 구조를 갖는 반도체 장치 및 그 제조 방법, 지지편의 제조 방법, 및, 지지편 형성용 적층 필름
JP7665512B2 (ja) * 2019-05-10 2025-04-21 株式会社半導体エネルギー研究所 半導体装置

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JP2728123B2 (ja) * 1995-07-24 1998-03-18 日本電気株式会社 スイッチング素子およびその製造方法
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
CN1271168C (zh) * 2000-09-07 2006-08-23 出光兴产株式会社 有机电场发光元件
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
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TWI243460B (en) * 2005-02-16 2005-11-11 Ind Tech Res Inst Organic semiconductor device with multi-protective layers and the making method
US8030643B2 (en) * 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
JP5008323B2 (ja) * 2005-03-28 2012-08-22 株式会社半導体エネルギー研究所 メモリ装置
JP4918994B2 (ja) * 2005-05-30 2012-04-18 住友電気工業株式会社 金属被膜の形成方法および金属配線
CN101305465B (zh) * 2005-11-09 2010-06-09 株式会社半导体能源研究所 半导体器件及其制造方法

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