JP2010267899A5 - - Google Patents

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Publication number
JP2010267899A5
JP2010267899A5 JP2009119641A JP2009119641A JP2010267899A5 JP 2010267899 A5 JP2010267899 A5 JP 2010267899A5 JP 2009119641 A JP2009119641 A JP 2009119641A JP 2009119641 A JP2009119641 A JP 2009119641A JP 2010267899 A5 JP2010267899 A5 JP 2010267899A5
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JP
Japan
Prior art keywords
film
forming
tungsten
recess
barrier metal
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JP2009119641A
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English (en)
Japanese (ja)
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JP5612830B2 (ja
JP2010267899A (ja
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Priority to JP2009119641A priority Critical patent/JP5612830B2/ja
Priority claimed from JP2009119641A external-priority patent/JP5612830B2/ja
Priority to US12/727,337 priority patent/US9177813B2/en
Publication of JP2010267899A publication Critical patent/JP2010267899A/ja
Publication of JP2010267899A5 publication Critical patent/JP2010267899A5/ja
Application granted granted Critical
Publication of JP5612830B2 publication Critical patent/JP5612830B2/ja
Priority to US14/867,400 priority patent/US20160020107A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009119641A 2009-05-18 2009-05-18 半導体装置の製造方法 Expired - Fee Related JP5612830B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009119641A JP5612830B2 (ja) 2009-05-18 2009-05-18 半導体装置の製造方法
US12/727,337 US9177813B2 (en) 2009-05-18 2010-03-19 Manufacturing method of semiconductor device
US14/867,400 US20160020107A1 (en) 2009-05-18 2015-09-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009119641A JP5612830B2 (ja) 2009-05-18 2009-05-18 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010267899A JP2010267899A (ja) 2010-11-25
JP2010267899A5 true JP2010267899A5 (enExample) 2012-04-19
JP5612830B2 JP5612830B2 (ja) 2014-10-22

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JP2009119641A Expired - Fee Related JP5612830B2 (ja) 2009-05-18 2009-05-18 半導体装置の製造方法

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US (2) US9177813B2 (enExample)
JP (1) JP5612830B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5612830B2 (ja) * 2009-05-18 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
TWI469221B (zh) 2009-06-26 2015-01-11 Pfc Device Co 溝渠式蕭基二極體及其製作方法
KR101299255B1 (ko) * 2009-11-06 2013-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2012064849A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
JP6082577B2 (ja) * 2012-11-29 2017-02-15 株式会社アルバック タングステン配線層の形成方法
FR3000840A1 (fr) * 2013-01-04 2014-07-11 St Microelectronics Rousset Procede de realisation de contacts metalliques au sein d'un circuit integre, et circuit integre correspondant
CN103928513B (zh) * 2013-01-15 2017-03-29 无锡华润上华半导体有限公司 一种沟槽dmos器件及其制作方法
US8980713B2 (en) * 2013-05-31 2015-03-17 Sony Corporation Method for fabricating a metal high-k gate stack for a buried recessed access device
JP6269276B2 (ja) * 2014-04-11 2018-01-31 豊田合成株式会社 半導体装置、半導体装置の製造方法
DE102014113254B4 (de) * 2014-09-15 2017-07-13 Infineon Technologies Austria Ag Halbleitervorrichtung mit Stromsensor
KR101955055B1 (ko) 2014-11-28 2019-03-07 매그나칩 반도체 유한회사 전력용 반도체 소자 및 그 소자의 제조 방법
JP6261494B2 (ja) * 2014-12-03 2018-01-17 三菱電機株式会社 電力用半導体装置
JP6706330B2 (ja) 2016-01-18 2020-06-03 日本テキサス・インスツルメンツ合同会社 金属充填ディープソースコンタクトを備えたパワーｍｏｓｆｅｔ
US10692863B2 (en) 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package
WO2018167925A1 (ja) * 2017-03-16 2018-09-20 三菱電機株式会社 半導体装置
US10354871B2 (en) 2017-09-11 2019-07-16 General Electric Company Sputtering system and method for forming a metal layer on a semiconductor device
JP7419740B2 (ja) 2019-10-11 2024-01-23 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US11973148B2 (en) * 2021-01-15 2024-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Surface damage control in diodes
JP7739787B2 (ja) * 2021-06-29 2025-09-17 富士電機株式会社 半導体デバイスおよび半導体デバイスの製造方法
CN115172151A (zh) * 2022-07-11 2022-10-11 四川广义微电子股份有限公司 一种改善镍硅势垒接触的方法
IT202300001455A1 (it) * 2023-01-31 2024-07-31 St Microelectronics Int Nv Dispositivo mosfet di potenza con protezione dagli agenti contaminanti e relativo processo di fabbricazione

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4717632A (en) * 1983-08-22 1988-01-05 Ovonic Synthetic-Materials Company, Inc. Adhesion and composite wear resistant coating and method
US4594294A (en) * 1983-09-23 1986-06-10 Energy Conversion Devices, Inc. Multilayer coating including disordered, wear resistant boron carbon external coating
US4619865A (en) * 1984-07-02 1986-10-28 Energy Conversion Devices, Inc. Multilayer coating and method
US4871686A (en) * 1988-03-28 1989-10-03 Motorola, Inc. Integrated Schottky diode and transistor
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5175125A (en) * 1991-04-03 1992-12-29 Chartered Semiconductor Manufacturing Ltd. Pte Method for making electrical contacts
JPH0645281A (ja) 1992-06-26 1994-02-18 Sony Corp 配線形成方法及び半導体装置、及びこれに用いることができるスパッタ方法及びスパッタ装置
JPH06151815A (ja) * 1992-11-13 1994-05-31 Ricoh Co Ltd 半導体装置とその製造方法
JP2844304B2 (ja) * 1994-02-15 1999-01-06 日本原子力研究所 プラズマ対向材料
US5514622A (en) * 1994-08-29 1996-05-07 Cypress Semiconductor Corporation Method for the formation of interconnects and landing pads having a thin, conductive film underlying the plug or an associated contact of via hole
JP3272242B2 (ja) * 1995-06-09 2002-04-08 三洋電機株式会社 半導体装置
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
JPH10223752A (ja) 1997-02-04 1998-08-21 Sony Corp 配線構造の形成方法
US6156647A (en) * 1997-10-27 2000-12-05 Applied Materials, Inc. Barrier layer structure which prevents migration of silicon into an adjacent metallic layer and the method of fabrication of the barrier layer
JPH11162879A (ja) * 1997-11-25 1999-06-18 Nippon Steel Corp 半導体装置用配線構造及びその製造方法
JPH11354541A (ja) * 1998-06-11 1999-12-24 Fujitsu Quantum Devices Kk 半導体装置およびその製造方法
JP3196200B2 (ja) 1998-06-26 2001-08-06 日本電気株式会社 半導体装置及びその製造方法
JP2000106397A (ja) * 1998-07-31 2000-04-11 Sony Corp 半導体装置における配線構造及びその形成方法
US6080285A (en) * 1998-09-14 2000-06-27 Applied Materials, Inc. Multiple step ionized metal plasma deposition process for conformal step coverage
JP2000196075A (ja) * 1998-12-25 2000-07-14 Hitachi Ltd 半導体装置及びその製造方法
JP3748337B2 (ja) 1999-02-04 2006-02-22 株式会社東芝 半導体装置
SG87187A1 (en) * 1999-10-18 2002-03-19 Applied Materials Inc Pvd-imp tungsten and tungsten nitride as a liner, barrier and/or seed layer for tungsten, aluminium and copper applications
US6193855B1 (en) * 1999-10-19 2001-02-27 Applied Materials, Inc. Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage
JP2001127005A (ja) 1999-10-28 2001-05-11 Applied Materials Inc 半導体装置の製造方法、その製造装置及び半導体装置
DE10104274C5 (de) 2000-02-04 2008-05-29 International Rectifier Corp., El Segundo Halbleiterbauteil mit MOS-Gatesteuerung und mit einer Kontaktstruktur sowie Verfahren zu seiner Herstellung
US6884724B2 (en) * 2001-08-24 2005-04-26 Applied Materials, Inc. Method for dishing reduction and feature passivation in polishing processes
JP4969001B2 (ja) * 2001-09-20 2012-07-04 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP2003318395A (ja) * 2002-04-19 2003-11-07 Hitachi Ltd 半導体装置の製造方法
JP2004247559A (ja) * 2003-02-14 2004-09-02 Elpida Memory Inc 半導体装置及びその製造方法
JP4860102B2 (ja) * 2003-06-26 2012-01-25 ルネサスエレクトロニクス株式会社 半導体装置
US7176128B2 (en) * 2004-01-12 2007-02-13 Infineon Technologies Ag Method for fabrication of a contact structure
JP2006005079A (ja) * 2004-06-16 2006-01-05 Seiko Epson Corp 半導体装置の製造方法
JP2006032598A (ja) 2004-07-15 2006-02-02 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP4671829B2 (ja) * 2005-09-30 2011-04-20 富士通株式会社 インターポーザ及び電子装置の製造方法
JP5096675B2 (ja) 2005-12-15 2012-12-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US7804668B2 (en) * 2006-11-16 2010-09-28 Headway Technologies, Inc. Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling
US20100096253A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc Pvd cu seed overhang re-sputtering with enhanced cu ionization
US8053861B2 (en) * 2009-01-26 2011-11-08 Novellus Systems, Inc. Diffusion barrier layers
JP5558020B2 (ja) * 2009-04-06 2014-07-23 株式会社アルバック 成膜方法
JP2010245334A (ja) * 2009-04-07 2010-10-28 Renesas Electronics Corp 半導体装置の製造方法
JP5612830B2 (ja) * 2009-05-18 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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