JP2007311584A5 - - Google Patents

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Publication number
JP2007311584A5
JP2007311584A5 JP2006139693A JP2006139693A JP2007311584A5 JP 2007311584 A5 JP2007311584 A5 JP 2007311584A5 JP 2006139693 A JP2006139693 A JP 2006139693A JP 2006139693 A JP2006139693 A JP 2006139693A JP 2007311584 A5 JP2007311584 A5 JP 2007311584A5
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semiconductor substrate
opening
wall
insulating film
plasma etching
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JP2006139693A
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English (en)
Japanese (ja)
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JP4812512B2 (ja
JP2007311584A (ja
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Priority claimed from JP2006139693A external-priority patent/JP4812512B2/ja
Priority to JP2006139693A priority Critical patent/JP4812512B2/ja
Priority to TW096116589A priority patent/TWI365508B/zh
Priority to KR1020070048736A priority patent/KR100864777B1/ko
Priority to US11/802,107 priority patent/US8669183B2/en
Priority to CN200710104155XA priority patent/CN101075554B/zh
Priority to EP07010073A priority patent/EP1858063A3/en
Publication of JP2007311584A publication Critical patent/JP2007311584A/ja
Publication of JP2007311584A5 publication Critical patent/JP2007311584A5/ja
Publication of JP4812512B2 publication Critical patent/JP4812512B2/ja
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JP2006139693A 2006-05-19 2006-05-19 半導体装置の製造方法 Expired - Fee Related JP4812512B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006139693A JP4812512B2 (ja) 2006-05-19 2006-05-19 半導体装置の製造方法
TW096116589A TWI365508B (en) 2006-05-19 2007-05-10 Manufacturing method of semiconductor device
KR1020070048736A KR100864777B1 (ko) 2006-05-19 2007-05-18 반도체 장치의 제조 방법
US11/802,107 US8669183B2 (en) 2006-05-19 2007-05-18 Manufacturing method of semiconductor device
CN200710104155XA CN101075554B (zh) 2006-05-19 2007-05-21 半导体装置的制造方法
EP07010073A EP1858063A3 (en) 2006-05-19 2007-05-21 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006139693A JP4812512B2 (ja) 2006-05-19 2006-05-19 半導体装置の製造方法

Publications (3)

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JP2007311584A JP2007311584A (ja) 2007-11-29
JP2007311584A5 true JP2007311584A5 (enExample) 2009-06-25
JP4812512B2 JP4812512B2 (ja) 2011-11-09

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JP2006139693A Expired - Fee Related JP4812512B2 (ja) 2006-05-19 2006-05-19 半導体装置の製造方法

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US (1) US8669183B2 (enExample)
EP (1) EP1858063A3 (enExample)
JP (1) JP4812512B2 (enExample)
KR (1) KR100864777B1 (enExample)
CN (1) CN101075554B (enExample)
TW (1) TWI365508B (enExample)

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