JP2009099792A5 - - Google Patents

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Publication number
JP2009099792A5
JP2009099792A5 JP2007270259A JP2007270259A JP2009099792A5 JP 2009099792 A5 JP2009099792 A5 JP 2009099792A5 JP 2007270259 A JP2007270259 A JP 2007270259A JP 2007270259 A JP2007270259 A JP 2007270259A JP 2009099792 A5 JP2009099792 A5 JP 2009099792A5
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JP
Japan
Prior art keywords
film
processed
leaving
films
manufacturing
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JP2007270259A
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English (en)
Japanese (ja)
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JP4976977B2 (ja
JP2009099792A (ja
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Priority to JP2007270259A priority Critical patent/JP4976977B2/ja
Priority claimed from JP2007270259A external-priority patent/JP4976977B2/ja
Priority to US12/251,791 priority patent/US7732338B2/en
Publication of JP2009099792A publication Critical patent/JP2009099792A/ja
Publication of JP2009099792A5 publication Critical patent/JP2009099792A5/ja
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Publication of JP4976977B2 publication Critical patent/JP4976977B2/ja
Expired - Fee Related legal-status Critical Current
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JP2007270259A 2007-10-17 2007-10-17 半導体装置の製造方法 Expired - Fee Related JP4976977B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007270259A JP4976977B2 (ja) 2007-10-17 2007-10-17 半導体装置の製造方法
US12/251,791 US7732338B2 (en) 2007-10-17 2008-10-15 Method of fabricating semiconductor device with reduced pitch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007270259A JP4976977B2 (ja) 2007-10-17 2007-10-17 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2009099792A JP2009099792A (ja) 2009-05-07
JP2009099792A5 true JP2009099792A5 (enExample) 2010-04-08
JP4976977B2 JP4976977B2 (ja) 2012-07-18

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Family Applications (1)

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JP2007270259A Expired - Fee Related JP4976977B2 (ja) 2007-10-17 2007-10-17 半導体装置の製造方法

Country Status (2)

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US (1) US7732338B2 (enExample)
JP (1) JP4976977B2 (enExample)

Families Citing this family (15)

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Publication number Priority date Publication date Assignee Title
KR100881513B1 (ko) * 2007-05-18 2009-02-05 주식회사 동부하이텍 반도체 미세패턴 형성 방법
US8420542B2 (en) * 2011-05-27 2013-04-16 International Business Machines Corporation Method of patterned image reversal
WO2013089727A1 (en) * 2011-12-15 2013-06-20 Intel Corporation Methods for single exposure - self-aligned double, triple, and quadruple patterning
CN103311092B (zh) * 2012-03-12 2015-08-05 中芯国际集成电路制造(上海)有限公司 沟槽的刻蚀方法
US9153440B2 (en) * 2012-03-23 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a semiconductor device
CN103779263B (zh) * 2012-10-18 2017-03-08 中芯国际集成电路制造(上海)有限公司 一种基于自对准双图案的半导体器件的制造方法
CN103794476B (zh) * 2012-10-30 2017-09-22 中芯国际集成电路制造(上海)有限公司 自对准三重图形的形成方法
US9070559B2 (en) 2013-07-25 2015-06-30 Kabushiki Kaisha Toshiba Pattern forming method and method of manufacturing semiconductor device
US9613806B2 (en) * 2013-09-04 2017-04-04 Sandisk Technologies Llc Triple patterning NAND flash memory
CN103928313B (zh) * 2014-04-22 2017-12-15 上海华力微电子有限公司 一种小尺寸图形的制作方法
CN103928314B (zh) * 2014-04-22 2017-06-06 上海华力微电子有限公司 一种底部无负载的自对准双层图形的制作方法
CN109643639B (zh) * 2016-09-13 2023-08-11 应用材料公司 用于间隔件和硬掩模应用的硼烷介导的从硅烷和烷基硅烷物质脱氢的工艺
CN110690117B (zh) * 2018-07-05 2023-10-20 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN111819691B (zh) 2020-05-25 2021-04-16 长江存储科技有限责任公司 存储器件及其形成方法
CN111758159B (zh) * 2020-05-25 2021-04-27 长江存储科技有限责任公司 存储器件及其形成方法

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Publication number Priority date Publication date Assignee Title
JPS5748237A (en) * 1980-09-05 1982-03-19 Nec Corp Manufacture of 2n doubling pattern
US5328810A (en) * 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
WO2001095690A1 (en) * 2000-06-06 2001-12-13 Ekc Technology, Inc. Method of making electronic materials
US6429123B1 (en) * 2000-10-04 2002-08-06 Vanguard International Semiconductor Corporation Method of manufacturing buried metal lines having ultra fine features
JP2002280388A (ja) * 2001-03-15 2002-09-27 Toshiba Corp 半導体装置の製造方法
JP2002359308A (ja) * 2001-06-01 2002-12-13 Toshiba Corp 半導体記憶装置及びその製造方法
US6638441B2 (en) * 2002-01-07 2003-10-28 Macronix International Co., Ltd. Method for pitch reduction
JP2006032648A (ja) * 2004-07-16 2006-02-02 Toshiba Corp パターン形成方法を含む半導体装置の製造方法
US7910288B2 (en) * 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
JP4619839B2 (ja) * 2005-03-16 2011-01-26 株式会社東芝 パターン形成方法
US7291560B2 (en) * 2005-08-01 2007-11-06 Infineon Technologies Ag Method of production pitch fractionizations in semiconductor technology
US7575992B2 (en) * 2005-09-14 2009-08-18 Hynix Semiconductor Inc. Method of forming micro patterns in semiconductor devices
KR100744683B1 (ko) * 2006-02-27 2007-08-01 주식회사 하이닉스반도체 반도체 소자 제조 방법
KR100790999B1 (ko) * 2006-10-17 2008-01-03 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
KR100817088B1 (ko) * 2007-02-16 2008-03-26 삼성전자주식회사 다마신 공정을 이용한 반도체 소자의 미세 금속 배선 패턴형성 방법
KR100822592B1 (ko) * 2007-03-23 2008-04-16 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성방법

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