JP2011502353A5 - - Google Patents

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Publication number
JP2011502353A5
JP2011502353A5 JP2010531101A JP2010531101A JP2011502353A5 JP 2011502353 A5 JP2011502353 A5 JP 2011502353A5 JP 2010531101 A JP2010531101 A JP 2010531101A JP 2010531101 A JP2010531101 A JP 2010531101A JP 2011502353 A5 JP2011502353 A5 JP 2011502353A5
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JP
Japan
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containing layer
region
layer
nitrogen
oxygen
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Pending
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JP2010531101A
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English (en)
Japanese (ja)
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JP2011502353A (ja
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Priority claimed from US11/926,348 external-priority patent/US7745344B2/en
Application filed filed Critical
Publication of JP2011502353A publication Critical patent/JP2011502353A/ja
Publication of JP2011502353A5 publication Critical patent/JP2011502353A5/ja
Pending legal-status Critical Current

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JP2010531101A 2007-10-29 2008-09-18 Ｎｖｍ回路をロジック回路と集積する方法 Pending JP2011502353A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/926,348 US7745344B2 (en) 2007-10-29 2007-10-29 Method for integrating NVM circuitry with logic circuitry
PCT/US2008/076750 WO2009058486A1 (en) 2007-10-29 2008-09-18 Method for integrating nvm circuitry with logic circuitry

Publications (2)

Publication Number Publication Date
JP2011502353A JP2011502353A (ja) 2011-01-20
JP2011502353A5 true JP2011502353A5 (enExample) 2011-11-10

Family

ID=40583356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010531101A Pending JP2011502353A (ja) 2007-10-29 2008-09-18 Ｎｖｍ回路をロジック回路と集積する方法

Country Status (8)

Country Link
US (1) US7745344B2 (enExample)
EP (1) EP2206151B1 (enExample)
JP (1) JP2011502353A (enExample)
KR (1) KR20100084164A (enExample)
CN (1) CN101842899B (enExample)
AT (1) ATE554501T1 (enExample)
TW (1) TWI437667B (enExample)
WO (1) WO2009058486A1 (enExample)

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FR2959349B1 (fr) * 2010-04-22 2012-09-21 Commissariat Energie Atomique Fabrication d'une memoire a deux grilles independantes auto-alignees
US8202778B2 (en) * 2010-08-31 2012-06-19 Freescale Semiconductor, Inc. Patterning a gate stack of a non-volatile memory (NVM) with simultaneous etch in non-NVM area
US8399310B2 (en) 2010-10-29 2013-03-19 Freescale Semiconductor, Inc. Non-volatile memory and logic circuit process integration
US8658497B2 (en) 2012-01-04 2014-02-25 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and logic integration
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US9111865B2 (en) * 2012-10-26 2015-08-18 Freescale Semiconductor, Inc. Method of making a logic transistor and a non-volatile memory (NVM) cell
JP6026914B2 (ja) * 2013-02-12 2016-11-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8716089B1 (en) 2013-03-08 2014-05-06 Freescale Semiconductor, Inc. Integrating formation of a replacement gate transistor and a non-volatile memory cell having thin film storage
US8741719B1 (en) 2013-03-08 2014-06-03 Freescale Semiconductor, Inc. Integrating formation of a logic transistor and a non-volatile memory cell using a partial replacement gate technique
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US8877585B1 (en) 2013-08-16 2014-11-04 Freescale Semiconductor, Inc. Non-volatile memory (NVM) cell, high voltage transistor, and high-K and metal gate transistor integration
US9082837B2 (en) 2013-08-08 2015-07-14 Freescale Semiconductor, Inc. Nonvolatile memory bitcell with inlaid high k metal select gate
US9082650B2 (en) 2013-08-21 2015-07-14 Freescale Semiconductor, Inc. Integrated split gate non-volatile memory cell and logic structure
US9252246B2 (en) 2013-08-21 2016-02-02 Freescale Semiconductor, Inc. Integrated split gate non-volatile memory cell and logic device
US8932925B1 (en) * 2013-08-22 2015-01-13 Freescale Semiconductor, Inc. Split-gate non-volatile memory (NVM) cell and device structure integration
US9275864B2 (en) 2013-08-22 2016-03-01 Freescale Semiconductor,Inc. Method to form a polysilicon nanocrystal thin film storage bitcell within a high k metal gate platform technology using a gate last process to form transistor gates
US9136129B2 (en) 2013-09-30 2015-09-15 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-last methodology
US8901632B1 (en) 2013-09-30 2014-12-02 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-K and metal gate integration using gate-last methodology
US9129855B2 (en) 2013-09-30 2015-09-08 Freescale Semiconductor, Inc. Non-volatile memory (NVM) and high-k and metal gate integration using gate-first methodology
US9231077B2 (en) 2014-03-03 2016-01-05 Freescale Semiconductor, Inc. Method of making a logic transistor and non-volatile memory (NVM) cell
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