CN101842899B - 将nvm电路与逻辑电路集成的方法 - Google Patents

将nvm电路与逻辑电路集成的方法 Download PDF

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CN101842899B
CN101842899B CN2008801140238A CN200880114023A CN101842899B CN 101842899 B CN101842899 B CN 101842899B CN 2008801140238 A CN2008801140238 A CN 2008801140238A CN 200880114023 A CN200880114023 A CN 200880114023A CN 101842899 B CN101842899 B CN 101842899B
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CN101842899A (zh
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G·L·钦德洛
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NXP USA Inc
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    • H10B41/42—Simultaneous manufacture of periphery and memory cells
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    • H10B41/42—Simultaneous manufacture of periphery and memory cells
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    • H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
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    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
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    • H10B—ELECTRONIC MEMORY DEVICES
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    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
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    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
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    • H10D30/68—Floating-gate IGFETs
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    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
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    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
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  • Theoretical Computer Science (AREA)
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  • Non-Volatile Memory (AREA)
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CN2008801140238A 2007-10-29 2008-09-18 将nvm电路与逻辑电路集成的方法 Active CN101842899B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/926,348 2007-10-29
US11/926,348 US7745344B2 (en) 2007-10-29 2007-10-29 Method for integrating NVM circuitry with logic circuitry
PCT/US2008/076750 WO2009058486A1 (en) 2007-10-29 2008-09-18 Method for integrating nvm circuitry with logic circuitry

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CN101842899A CN101842899A (zh) 2010-09-22
CN101842899B true CN101842899B (zh) 2012-08-29

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US (1) US7745344B2 (enExample)
EP (1) EP2206151B1 (enExample)
JP (1) JP2011502353A (enExample)
KR (1) KR20100084164A (enExample)
CN (1) CN101842899B (enExample)
AT (1) ATE554501T1 (enExample)
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US20090111226A1 (en) 2009-04-30
ATE554501T1 (de) 2012-05-15
KR20100084164A (ko) 2010-07-23
TW200939404A (en) 2009-09-16
CN101842899A (zh) 2010-09-22
EP2206151A4 (en) 2010-11-24
WO2009058486A1 (en) 2009-05-07
EP2206151A1 (en) 2010-07-14
EP2206151B1 (en) 2012-04-18
JP2011502353A (ja) 2011-01-20
TWI437667B (zh) 2014-05-11
US7745344B2 (en) 2010-06-29

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