CN101529596B - 装置及其制造方法 - Google Patents

装置及其制造方法 Download PDF

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Publication number
CN101529596B
CN101529596B CN2007800392561A CN200780039256A CN101529596B CN 101529596 B CN101529596 B CN 101529596B CN 2007800392561 A CN2007800392561 A CN 2007800392561A CN 200780039256 A CN200780039256 A CN 200780039256A CN 101529596 B CN101529596 B CN 101529596B
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CN
China
Prior art keywords
layer
memory
tin
electrode layer
semiconductor device
Prior art date
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Expired - Fee Related
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CN2007800392561A
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English (en)
Chinese (zh)
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CN101529596A (zh
Inventor
汤川干央
杉泽希
永田贵章
吉富修平
相泽道子
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN101529596A publication Critical patent/CN101529596A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom

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  • Semiconductor Memories (AREA)
CN2007800392561A 2006-11-29 2007-11-21 装置及其制造方法 Expired - Fee Related CN101529596B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP321032/2006 2006-11-29
JP2006321032 2006-11-29
PCT/JP2007/072991 WO2008066091A1 (en) 2006-11-29 2007-11-21 Device, and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN101529596A CN101529596A (zh) 2009-09-09
CN101529596B true CN101529596B (zh) 2011-12-14

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Family Applications (1)

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CN2007800392561A Expired - Fee Related CN101529596B (zh) 2006-11-29 2007-11-21 装置及其制造方法

Country Status (6)

Country Link
US (1) US7712676B2 (enExample)
EP (1) EP2084745A4 (enExample)
JP (2) JP5259160B2 (enExample)
CN (1) CN101529596B (enExample)
TW (1) TWI446529B (enExample)
WO (1) WO2008066091A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101305465B (zh) * 2005-11-09 2010-06-09 株式会社半导体能源研究所 半导体器件及其制造方法
JP5121432B2 (ja) * 2007-12-11 2013-01-16 キヤノン株式会社 液晶表示装置及びその製造方法並びに液晶プロジェクション装置
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
WO2011013275A1 (ja) * 2009-07-28 2011-02-03 シャープ株式会社 有機素子及びそれを備えた有機デバイス
US20120255607A1 (en) * 2009-11-18 2012-10-11 The Trustees Of Princeton University Semiconductor coated microporous graphene scaffolds
TWI429090B (zh) * 2010-05-21 2014-03-01 國立成功大學 Crystal element and manufacturing method thereof
JP2011249556A (ja) * 2010-05-27 2011-12-08 Panasonic Corp 半導体レーザ装置及びその製造方法
KR20120042151A (ko) * 2010-10-22 2012-05-03 삼성모바일디스플레이주식회사 플렉서블 디스플레이 장치의 제조 방법
US8957462B2 (en) * 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
JP5621690B2 (ja) * 2011-03-31 2014-11-12 富士通株式会社 電子装置及びフレキシブル基板
US9001564B2 (en) 2011-06-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for driving the same
WO2014165225A1 (en) * 2013-03-12 2014-10-09 New Jersey Institute Of Technology System and method for thin film photovoltaic modules and back contact for thin film solar cells
TWI695525B (zh) * 2014-07-25 2020-06-01 日商半導體能源研究所股份有限公司 剝離方法、發光裝置、模組以及電子裝置
JP2016224297A (ja) * 2015-06-01 2016-12-28 株式会社ジャパンディスプレイ 表示装置
US10374093B2 (en) 2016-12-08 2019-08-06 Electronics And Telecommunications Research Institute Method of fabricating a flexible substrate and the flexible substrate fabricated thereby
TWI678772B (zh) * 2017-04-28 2019-12-01 矽品精密工業股份有限公司 電子封裝件及其製法
KR102750779B1 (ko) * 2019-04-25 2025-01-06 가부시끼가이샤 레조낙 돌멘 구조를 갖는 반도체 장치 및 그 제조 방법, 지지편의 제조 방법, 및, 지지편 형성용 적층 필름
JP7665512B2 (ja) * 2019-05-10 2025-04-21 株式会社半導体エネルギー研究所 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5201865A (en) * 1991-10-28 1993-04-13 Medtronic, Inc. Medical lead impedance measurement system
WO2005034028A1 (ja) * 2003-09-30 2005-04-14 Brother Kogyo Kabushiki Kaisha 無線タグ回路素子、無線タグ、無線タグ作成装置、及び無線タグ通信装置
KR20060073077A (ko) * 2004-12-24 2006-06-28 삼성전자주식회사 양자점을 이용하는 메모리 소자
WO2006085633A1 (en) * 2005-02-10 2006-08-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2728123B2 (ja) * 1995-07-24 1998-03-18 日本電気株式会社 スイッチング素子およびその製造方法
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
CN1271168C (zh) * 2000-09-07 2006-08-23 出光兴产株式会社 有机电场发光元件
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2004002929A (ja) * 2001-08-03 2004-01-08 Furuya Kinzoku:Kk 銀合金、スパッタリングターゲット、反射型ｌｃｄ用反射板、反射配線電極、薄膜、その製造方法、光学記録媒体、電磁波遮蔽体、電子部品用金属材料、配線材料、電子部品、電子機器、金属膜の加工方法、電子光学部品、積層体及び建材ガラス
US7220985B2 (en) * 2002-12-09 2007-05-22 Spansion, Llc Self aligned memory element and wordline
WO2005112288A1 (ja) * 2004-05-13 2005-11-24 Brother Kogyo Kabushiki Kaisha 無線タグ通信装置、無線タグ通信システム、及び無線タグ検出システム
US7211824B2 (en) * 2004-09-27 2007-05-01 Nitto Denko Corporation Organic semiconductor diode
KR20140015128A (ko) 2004-10-18 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP4954537B2 (ja) * 2004-12-03 2012-06-20 株式会社半導体エネルギー研究所 半導体装置
WO2006059554A1 (en) * 2004-12-03 2006-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20060178696A1 (en) * 2005-02-04 2006-08-10 Porter Stephen C Macroporous materials for use in aneurysms
JP5046524B2 (ja) * 2005-02-10 2012-10-10 株式会社半導体エネルギー研究所 記憶素子、記憶装置、及び電子機器
TWI243460B (en) * 2005-02-16 2005-11-11 Ind Tech Res Inst Organic semiconductor device with multi-protective layers and the making method
US8030643B2 (en) * 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
JP5008323B2 (ja) * 2005-03-28 2012-08-22 株式会社半導体エネルギー研究所 メモリ装置
JP4918994B2 (ja) * 2005-05-30 2012-04-18 住友電気工業株式会社 金属被膜の形成方法および金属配線
CN101305465B (zh) * 2005-11-09 2010-06-09 株式会社半导体能源研究所 半导体器件及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5201865A (en) * 1991-10-28 1993-04-13 Medtronic, Inc. Medical lead impedance measurement system
WO2005034028A1 (ja) * 2003-09-30 2005-04-14 Brother Kogyo Kabushiki Kaisha 無線タグ回路素子、無線タグ、無線タグ作成装置、及び無線タグ通信装置
KR20060073077A (ko) * 2004-12-24 2006-06-28 삼성전자주식회사 양자점을 이용하는 메모리 소자
WO2006085633A1 (en) * 2005-02-10 2006-08-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device

Also Published As

Publication number Publication date
EP2084745A4 (en) 2012-10-24
TWI446529B (zh) 2014-07-21
US20080128517A1 (en) 2008-06-05
JP5809651B2 (ja) 2015-11-11
WO2008066091A1 (en) 2008-06-05
TW200840035A (en) 2008-10-01
US7712676B2 (en) 2010-05-11
JP2013102204A (ja) 2013-05-23
CN101529596A (zh) 2009-09-09
JP5259160B2 (ja) 2013-08-07
EP2084745A1 (en) 2009-08-05
JP2008160095A (ja) 2008-07-10

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