JP2008501239A5 - - Google Patents

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Publication number
JP2008501239A5
JP2008501239A5 JP2007515099A JP2007515099A JP2008501239A5 JP 2008501239 A5 JP2008501239 A5 JP 2008501239A5 JP 2007515099 A JP2007515099 A JP 2007515099A JP 2007515099 A JP2007515099 A JP 2007515099A JP 2008501239 A5 JP2008501239 A5 JP 2008501239A5
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JP
Japan
Prior art keywords
wafer
layer
bonding
channel region
strain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007515099A
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English (en)
Japanese (ja)
Other versions
JP2008501239A (ja
JP4744514B2 (ja
Filing date
Publication date
Priority claimed from US10/856,581 external-priority patent/US7041576B2/en
Application filed filed Critical
Publication of JP2008501239A publication Critical patent/JP2008501239A/ja
Publication of JP2008501239A5 publication Critical patent/JP2008501239A5/ja
Application granted granted Critical
Publication of JP4744514B2 publication Critical patent/JP4744514B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007515099A 2004-05-28 2005-04-26 集積回路の形成方法 Expired - Fee Related JP4744514B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/856,581 US7041576B2 (en) 2004-05-28 2004-05-28 Separately strained N-channel and P-channel transistors
US10/856,581 2004-05-28
PCT/US2005/014325 WO2005119746A1 (en) 2004-05-28 2005-04-26 Separately strained n-channel and p-channel transistors

Publications (3)

Publication Number Publication Date
JP2008501239A JP2008501239A (ja) 2008-01-17
JP2008501239A5 true JP2008501239A5 (enExample) 2008-06-19
JP4744514B2 JP4744514B2 (ja) 2011-08-10

Family

ID=35459624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515099A Expired - Fee Related JP4744514B2 (ja) 2004-05-28 2005-04-26 集積回路の形成方法

Country Status (7)

Country Link
US (1) US7041576B2 (enExample)
EP (1) EP1749311A4 (enExample)
JP (1) JP4744514B2 (enExample)
KR (1) KR101149134B1 (enExample)
CN (1) CN100508130C (enExample)
TW (1) TWI416702B (enExample)
WO (1) WO2005119746A1 (enExample)

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US7459781B2 (en) * 2003-12-03 2008-12-02 Wen-Kun Yang Fan out type wafer level package structure and method of the same
US7348658B2 (en) * 2004-08-30 2008-03-25 International Business Machines Corporation Multilayer silicon over insulator device
US8013342B2 (en) 2007-11-14 2011-09-06 International Business Machines Corporation Double-sided integrated circuit chips
US7670927B2 (en) * 2006-05-16 2010-03-02 International Business Machines Corporation Double-sided integrated circuit chips
KR100789570B1 (ko) * 2006-08-23 2007-12-28 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US7485508B2 (en) * 2007-01-26 2009-02-03 International Business Machines Corporation Two-sided semiconductor-on-insulator structures and methods of manufacturing the same
US7800150B2 (en) * 2007-05-29 2010-09-21 United Microelectronics Corp. Semiconductor device
US8288756B2 (en) * 2007-11-30 2012-10-16 Advanced Micro Devices, Inc. Hetero-structured, inverted-T field effect transistor
US20090289280A1 (en) * 2008-05-22 2009-11-26 Da Zhang Method for Making Transistors and the Device Thereof
US8003454B2 (en) * 2008-05-22 2011-08-23 Freescale Semiconductor, Inc. CMOS process with optimized PMOS and NMOS transistor devices
US8193559B2 (en) * 2009-01-27 2012-06-05 Infineon Technologies Austria Ag Monolithic semiconductor switches and method for manufacturing
TWI478319B (zh) * 2010-07-20 2015-03-21 晶元光電股份有限公司 整合式發光裝置及其製造方法
DE102010045055B4 (de) * 2010-09-10 2019-03-28 Austriamicrosystems Ag Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Durchkontaktierung
US8421193B2 (en) * 2010-11-18 2013-04-16 Nanya Technology Corporation Integrated circuit device having through via and method for preparing the same
US9947688B2 (en) * 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
US8664756B2 (en) 2012-07-24 2014-03-04 Medtronic, Inc. Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability
US8803292B2 (en) 2012-04-27 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate vias and methods for forming the same
US8624324B1 (en) 2012-08-10 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Connecting through vias to devices
US10128269B2 (en) 2013-11-08 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a semiconductor structure having multiple semiconductor-device layers
US10163897B2 (en) * 2013-11-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Inter-level connection for multi-layer structures
KR102530338B1 (ko) * 2016-12-15 2023-05-08 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US11869890B2 (en) * 2017-12-26 2024-01-09 Intel Corporation Stacked transistors with contact last
US11430814B2 (en) 2018-03-05 2022-08-30 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
KR102746120B1 (ko) 2019-03-11 2024-12-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11158738B2 (en) * 2019-06-18 2021-10-26 Samsung Electronics Co., Ltd Method of forming isolation dielectrics for stacked field effect transistors (FETs)
WO2022201497A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、半導体装置、集積回路要素、及び、集積回路要素の製造方法
US12431469B2 (en) * 2022-02-11 2025-09-30 International Business Machines Corporation Vertically stacked FET with strained channel

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JPS6052052A (ja) * 1983-08-31 1985-03-23 Fujitsu Ltd 相補型ｍｉｓ半導体装置
JPS60154549A (ja) * 1984-01-24 1985-08-14 Fujitsu Ltd 半導体装置の製造方法
JPS63126262A (ja) * 1986-11-14 1988-05-30 Sharp Corp 三次元半導体集積回路の製造方法
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US5936280A (en) * 1997-04-21 1999-08-10 Advanced Micro Devices, Inc. Multilayer quadruple gate field effect transistor structure for use in integrated circuit devices
US5906951A (en) 1997-04-30 1999-05-25 International Business Machines Corporation Strained Si/SiGe layers on insulator
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