CN100508130C - 分别应变的n沟道和p沟道晶体管 - Google Patents

分别应变的n沟道和p沟道晶体管 Download PDF

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Publication number
CN100508130C
CN100508130C CNB2005800152361A CN200580015236A CN100508130C CN 100508130 C CN100508130 C CN 100508130C CN B2005800152361 A CNB2005800152361 A CN B2005800152361A CN 200580015236 A CN200580015236 A CN 200580015236A CN 100508130 C CN100508130 C CN 100508130C
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layer
wafer
bonding
transistors
conductivity type
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Expired - Fee Related
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Chinese (zh)
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CN1954410A (zh
Inventor
斯科特·K·鲍兹德尔
塞利·M.·塞里克
比阳·W.·民
万斯·H.·阿达姆斯
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01032—Germanium [Ge]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01033—Arsenic [As]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
CNB2005800152361A 2004-05-28 2005-04-26 分别应变的n沟道和p沟道晶体管 Expired - Fee Related CN100508130C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/856,581 US7041576B2 (en) 2004-05-28 2004-05-28 Separately strained N-channel and P-channel transistors
US10/856,581 2004-05-28

Publications (2)

Publication Number Publication Date
CN1954410A CN1954410A (zh) 2007-04-25
CN100508130C true CN100508130C (zh) 2009-07-01

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CNB2005800152361A Expired - Fee Related CN100508130C (zh) 2004-05-28 2005-04-26 分别应变的n沟道和p沟道晶体管

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US (1) US7041576B2 (enExample)
EP (1) EP1749311A4 (enExample)
JP (1) JP4744514B2 (enExample)
KR (1) KR101149134B1 (enExample)
CN (1) CN100508130C (enExample)
TW (1) TWI416702B (enExample)
WO (1) WO2005119746A1 (enExample)

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US7514767B2 (en) * 2003-12-03 2009-04-07 Advanced Chip Engineering Technology Inc. Fan out type wafer level package structure and method of the same
US7459781B2 (en) * 2003-12-03 2008-12-02 Wen-Kun Yang Fan out type wafer level package structure and method of the same
US7348658B2 (en) * 2004-08-30 2008-03-25 International Business Machines Corporation Multilayer silicon over insulator device
US7670927B2 (en) * 2006-05-16 2010-03-02 International Business Machines Corporation Double-sided integrated circuit chips
US8013342B2 (en) * 2007-11-14 2011-09-06 International Business Machines Corporation Double-sided integrated circuit chips
KR100789570B1 (ko) * 2006-08-23 2007-12-28 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US7485508B2 (en) * 2007-01-26 2009-02-03 International Business Machines Corporation Two-sided semiconductor-on-insulator structures and methods of manufacturing the same
US7800150B2 (en) * 2007-05-29 2010-09-21 United Microelectronics Corp. Semiconductor device
US8288756B2 (en) * 2007-11-30 2012-10-16 Advanced Micro Devices, Inc. Hetero-structured, inverted-T field effect transistor
US8003454B2 (en) * 2008-05-22 2011-08-23 Freescale Semiconductor, Inc. CMOS process with optimized PMOS and NMOS transistor devices
US20090289280A1 (en) * 2008-05-22 2009-11-26 Da Zhang Method for Making Transistors and the Device Thereof
US8193559B2 (en) 2009-01-27 2012-06-05 Infineon Technologies Austria Ag Monolithic semiconductor switches and method for manufacturing
TWI478319B (zh) * 2010-07-20 2015-03-21 晶元光電股份有限公司 整合式發光裝置及其製造方法
DE102010045055B4 (de) * 2010-09-10 2019-03-28 Austriamicrosystems Ag Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Durchkontaktierung
US8421193B2 (en) * 2010-11-18 2013-04-16 Nanya Technology Corporation Integrated circuit device having through via and method for preparing the same
US9947688B2 (en) * 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
US8664756B2 (en) 2012-07-24 2014-03-04 Medtronic, Inc. Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability
US8803292B2 (en) 2012-04-27 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate vias and methods for forming the same
US8624324B1 (en) 2012-08-10 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Connecting through vias to devices
US10128269B2 (en) * 2013-11-08 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a semiconductor structure having multiple semiconductor-device layers
KR102530338B1 (ko) * 2016-12-15 2023-05-08 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US11869890B2 (en) * 2017-12-26 2024-01-09 Intel Corporation Stacked transistors with contact last
US11430814B2 (en) 2018-03-05 2022-08-30 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
KR102746120B1 (ko) 2019-03-11 2024-12-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11158738B2 (en) * 2019-06-18 2021-10-26 Samsung Electronics Co., Ltd Method of forming isolation dielectrics for stacked field effect transistors (FETs)
WO2022201497A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、半導体装置、集積回路要素、及び、集積回路要素の製造方法
US12431469B2 (en) * 2022-02-11 2025-09-30 International Business Machines Corporation Vertically stacked FET with strained channel

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Cited By (6)

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Publication number Priority date Publication date Assignee Title
CN104658999A (zh) * 2013-11-15 2015-05-27 台湾积体电路制造股份有限公司 用于多层结构的层间连接件
US10163897B2 (en) 2013-11-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Inter-level connection for multi-layer structures
CN104658999B (zh) * 2013-11-15 2019-08-23 台湾积体电路制造股份有限公司 用于多层结构的层间连接件
US10879235B2 (en) 2013-11-15 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Inter-level connection for multi-layer structures
US11532612B2 (en) 2013-11-15 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Inter-level connection for multi-layer structures
US11784183B2 (en) 2013-11-15 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Inter-level connection for multi-layer structures

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EP1749311A1 (en) 2007-02-07
TWI416702B (zh) 2013-11-21
TW200614489A (en) 2006-05-01
US20050275017A1 (en) 2005-12-15
KR101149134B1 (ko) 2012-05-29
WO2005119746A1 (en) 2005-12-15
CN1954410A (zh) 2007-04-25
US7041576B2 (en) 2006-05-09
EP1749311A4 (en) 2010-01-13
JP4744514B2 (ja) 2011-08-10
JP2008501239A (ja) 2008-01-17
KR20070022809A (ko) 2007-02-27

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