JP4744514B2 - 集積回路の形成方法 - Google Patents
集積回路の形成方法 Download PDFInfo
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Description
それにより、Nチャネル型トランジスタ及びPチャネル型トランジスタの両方に対して動作速度を向上させることのできる集積回路を形成することができる。
各図中の同じ部材番号は、別の注記がなければ同一の物品を示す。各図は、実寸に従い図示されていない。
図1〜図3は、本発明の一実施形態に従う集積回路において3つの製造段階を示す。図1は、本発明に従うウェハの部分側断面図を示す。ウェハ101には、絶縁体105及び基板103上に設けられた二つのPチャネル型トランジスタ114,116が図示されている。トランジスタ114は、層107内に形成された活性領域115を含む。活性領域115は、N導電型ドーパント(リンやヒ素等)でドープされる半導体材料(シリコン等)から形成される。活性領域は、主部124と、P+型伝導度を有するようにカウンタードープされる二つのソース/ドレイン領域117,119とを含む。トランジスタ114は、活性領域115内に設けられたトランジスタ114のチャネル領域120上に位置するゲート121(ポリシリコンや金属等)を含む。
別の層のチャネル領域よりも大きな圧縮歪みを有する層のチャネル領域を備えた集積回路により、ホール移動度が向上するように相対的に大きな圧縮歪みを有するチャネル領域を備えたPチャネル型トランジスタと、電子移動度が向上するように相対的に大きな引張り歪みを有するチャネル領域を備えたNチャネル型トランジスタとが得られる。従って、集積回路は、Pチャネル型トランジスタの全てではないにしろその大部分がウェハ101の残りの層に設けられ、Nチャネル型トランジスタの全てではないにしろその大部分がウェハ201の層に設けられたウェハ301から作製してもよい。この構成により、実施形態によっては、Pチャネル型トランジスタがホール移動度を増大させるために作製され、Nチャネル型トランジスタが電子移動度を増大させるために作製される。
図6は、基板453、結合材451及び層452が除去された後の合成ウェハ501の部分側断面図である。層452が除去された後で、かつILD605が形成される前に、ビア607,619のホールがILD511の各相互接続部533,532に至るまで形成される。また、ホールは、各ビア611,651,653及び614に対して、ILD411の各相互接続部433、429、431及び435に至るまで形成される。ビア金属層が析出されてホールが充填された後、合成ウェハ501は、平坦化及びホール外の過剰金属を除去するため研磨(例えば、化学機械研磨)される。その後、ILD605が形成される。ILD605は、相互接続部533,433を接続する相互接続部609と、相互接続部435,532を接続する相互接続部621とを含む。また、ILD605は、合成ウェハ501について図示されたトランジスタの外部接続用パッド631,673及びビア641,635も含む。保護層661は、ILD605上に形成され、開口が、パッド631,673を露出させるために形成される。別の実施形態において、ウェハ501は、別の種類の外部導電構造体を含む。
Claims (5)
- 集積回路を形成する方法であって、
第一基板(203、503)と、その第一基板(203、503)上に配置される第一層(207、507)と、その第一層にチャネル領域を有する複数のNチャネル型トランジスタ(214、216、514、516)とを備える第一ウェハ(201、502)を提供するステップと、
第二基板(103、403)と、その第二基板(103、403)上に配置される第二層(107、407)と、その第二層にチャネル領域(120、420)を有する複数のPチャネル型トランジスタ(114、116、414、416)とを備える第二ウェハ(101、401)を、前記第一ウェハ(201、502)に結合するステップと、
前記結合するステップに続いて、第二ウェハ(101、401)の一部(103、453)を除去するステップとを備え、
前記除去するステップの後に、第一層(207、507)のチャネル領域は第一歪みを有し、第二層(107、407)のチャネル領域は第二歪みを有し、第一歪みは第二歪みよりも高い伸張性を有している方法。 - 請求項1記載の方法において、 前記結合するステップにて、前記第二層にチャネル領域を有するPチャネル型トランジスタ(114、116)が、第一ウェハ(201)に対して表面を下向きにして配置されるように、第二ウェハ(101)が第一ウェハ(201)に結合される方法。
- 請求項1記載の方法は、更に、
第二ウェハ(401)を結合する前に、第二ウェハ(401)の第二基板(403)上に第二層(452)を形成するステップと、
第二ウェハ(401)を結合する前に、第二層(452)上に追加の基板(453)を結合するステップと、
第二ウェハ(401)を結合する前に、第二ウエハから前記第二ウェハの第二基板(403)を除去するステップとを備え、
前記結合するステップに続いて、第二ウェハ(401)の一部を除去するステップでは、前記追加の基板(453)が除去されることを含む方法。 - 請求項1記載の方法は、更に、
前記除去するステップに続いて、第一及び第二ウェハ上に層間絶縁膜(311)を形成するステップを備える方法。 - 請求項1記載の方法において、
前記結合するステップは、第二層にチャネル領域を有するPチャネル型トランジスタ(414、416)が第一ウェハ(502)に対して表面を上向きにして配置されるように第二ウェハ(401)を第一ウェハ(502)に結合するステップを含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/856,581 US7041576B2 (en) | 2004-05-28 | 2004-05-28 | Separately strained N-channel and P-channel transistors |
US10/856,581 | 2004-05-28 | ||
PCT/US2005/014325 WO2005119746A1 (en) | 2004-05-28 | 2005-04-26 | Separately strained n-channel and p-channel transistors |
Publications (3)
Publication Number | Publication Date |
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JP2008501239A JP2008501239A (ja) | 2008-01-17 |
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CN (1) | CN100508130C (ja) |
TW (1) | TWI416702B (ja) |
WO (1) | WO2005119746A1 (ja) |
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DE102010045055B4 (de) * | 2010-09-10 | 2019-03-28 | Austriamicrosystems Ag | Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Durchkontaktierung |
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US9947688B2 (en) * | 2011-06-22 | 2018-04-17 | Psemi Corporation | Integrated circuits with components on both sides of a selected substrate and methods of fabrication |
US8664756B2 (en) | 2012-07-24 | 2014-03-04 | Medtronic, Inc. | Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability |
US8803292B2 (en) | 2012-04-27 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-substrate vias and methods for forming the same |
US8624324B1 (en) | 2012-08-10 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Connecting through vias to devices |
US10128269B2 (en) * | 2013-11-08 | 2018-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for a semiconductor structure having multiple semiconductor-device layers |
US10163897B2 (en) | 2013-11-15 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Inter-level connection for multi-layer structures |
KR102530338B1 (ko) * | 2016-12-15 | 2023-05-08 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
DE112017008080T5 (de) * | 2017-12-26 | 2020-07-09 | Intel Corporation | Gestapelte transistoren mit zuletzt ausgebildetem kontakt |
WO2019172879A1 (en) | 2018-03-05 | 2019-09-12 | Intel Corporation | Metallization structures for stacked device connectivity and their methods of fabrication |
US11158738B2 (en) * | 2019-06-18 | 2021-10-26 | Samsung Electronics Co., Ltd | Method of forming isolation dielectrics for stacked field effect transistors (FETs) |
WO2022201497A1 (ja) * | 2021-03-26 | 2022-09-29 | 昭和電工マテリアルズ株式会社 | 半導体装置の製造方法、半導体装置、集積回路要素、及び、集積回路要素の製造方法 |
US20230260971A1 (en) * | 2022-02-11 | 2023-08-17 | International Business Machines Corporation | Vertically stacked fet with strained channel |
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- 2005-04-26 EP EP05738546A patent/EP1749311A4/en not_active Withdrawn
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KR101149134B1 (ko) | 2012-05-29 |
EP1749311A1 (en) | 2007-02-07 |
JP2008501239A (ja) | 2008-01-17 |
CN1954410A (zh) | 2007-04-25 |
US7041576B2 (en) | 2006-05-09 |
EP1749311A4 (en) | 2010-01-13 |
WO2005119746A1 (en) | 2005-12-15 |
TW200614489A (en) | 2006-05-01 |
CN100508130C (zh) | 2009-07-01 |
US20050275017A1 (en) | 2005-12-15 |
KR20070022809A (ko) | 2007-02-27 |
TWI416702B (zh) | 2013-11-21 |
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