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  • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H10D48/34—Bipolar devices
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  • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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  • H10D84/01—Manufacture or treatment
  • H10D84/02—Manufacture or treatment characterised by using material-based technologies
  • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
  • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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  • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
  • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
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  • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
  • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
  • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
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  • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
  • H01L2224/8319—Arrangement of the layer connectors prior to mounting
  • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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  • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
  • H01L2224/838—Bonding techniques
  • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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  • H01L2924/01033—Arsenic [As]
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  • H01L2924/01074—Tungsten [W]
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  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/049—Nitrides composed of metals from groups of the periodic table
  • H01L2924/0494—4th Group
  • H01L2924/04941—TiN
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  • H01L2924/06—Polymers
  • H01L2924/078—Adhesive characteristics other than chemical
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  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/14—Integrated circuits
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  • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
  • H01L2924/1901—Structure
  • H01L2924/1904—Component type
  • H01L2924/19043—Component type being a resistor

Definitions

• This invention relates in general to integrated circuits and in particular to integrated circuits with differently strained channels for transistors of different conductivity types.
• the strain of a channel of a transistor affects the carrier mobility of the transistor. Strain may be induced either intentionally or unintentionally during the manufacture. A particular strain differently affects the electron mobility of N-channel transistors and the hole mobility of P-channel transistors. A particular strain may be more desirable for the operating speed of an N-channel transistor and less desirable for the operating speed of a P-channel transistor. For example, a more tensile strain of a channel region may provide for an increase in electron mobility and a decrease in hole mobility.
• Figure 1 is a partial cutaway side view of a wafer during a stage in manufacture of one embodiment of an integrated circuit according to the present invention.
• Figure 2 is a partial cutaway side view of a wafer during another stage in manufacture of one embodiment of an integrated circuit according to the present invention.
• Figure 3 is a partial cutaway side view of a wafer during another stage in manufacture of one embodiment of an integrated circuit according to the present invention.
• Figure 4 is a partial cutaway side view of a wafer during a stage in manufacture of another embodiment of an integrated circuit according to the present invention.
• Figure 5 is a partial cutaway side view of a wafer during another stage in manufacture of another embodiment of an integrated circuit according to the present invention
• Figure 6 is a partial cutaway side view of a wafer during another stage in manufacture of another embodiment of an integrated circuit according to the present invention
• Figures 1-3 show three different stages during the manufacture of one embodiment of an integrated circuit according to the present invention.
• Figure 1 shows a partial side cutaway view of a wafer according to the present invention. Shown on wafer 101 are two P- channel transistors 114 and 116 located over insulator 105 and substrate 103.
• Transistor 114 includes an active region 115 formed in layer 107. Active region 115 is made of a semiconductor material (e.g. silicon) that is doped with an N conductivity type dopant (e.g. phosphorous or arsenic). Active region includes a body 124 and two source/drain regions 117 and 119 that are counter doped to have a P+ type conductivity.
• Transistor 114 includes a gate 121 (e.g. polysilicon or metal) located over the channel region 120 of transistor 114, which is located in active region 115.
• gate 121 e.g. polysilicon or metal
• Oxide portion 113 of layer 107 is located between active region 115 of transistor 114 and the active region 136 of transistor 116. Oxide portion 113 serves as an isolation region between active regions. In one embodiment, oxide portion 113 is formed by etching silicon or other semiconductor material of layer 107 and then filling with an oxide. In one embodiment, the active regions of layer 107 are made of a single material (e.g. silicon). In other embodiments, layer 107 may be made of multiple layers of different materials, e.g. a silicon layer on a silicon germanium layer. Via 127 electrically couples gate 121 to an interconnect 129 in inter level dielectric (ILD) 111. Interconnect 129 is coupled to either another gate (not shown) or another source/drain region (not shown).
• ILD inter level dielectric
• Source/drain contact 125 (e.g. made of tungsten) couples source/drain region 119 to interconnect 131 of ILD 111.
• Source/drain contact 126 couples source/drain region 117 to interconnect 133 of ILD 111.
• Interconnect 131 couples source/drain region 119 to source/drain region 132 of P-channel transistor 116.
• ILD 111 includes only a single layer of interconnects, but in other embodiments, may have multiple layers of interconnects.
• Barrier layers e.g. of titanium, titanium nitride may be located between the contacts (125 and 126) and the source/drain regions (119 and 117), between the interconnects and the vias, and/or on the side walls of the vias, interconnects, and contacts. Also, the top portions of the gates and the source/drain regions may include suicides (not shown).
• substrate 103 has a thickness of 600 microns
• insulator 105 has a thickness of 200 nm
• layer 107 has a thickness of 110 nm
• polysilicon/contact layer 109 has a thickness of 400 nm
• ILD 111 has a thickness of 200 nm.
• Other wafers may have other dimensions in other embodiments.
• substrate 103 is at least 100 times thicker than layer 107, and in some embodiments is at least 1000 times thicker.
• FIG. 2 shows a partial side cutaway view of another wafer according to the present invention.
• wafer 201 Shown on wafer 201 are two N-channel transistors 214 and 216 located over insulator 205 and substrate 203.
• Wafer 201 is similar to wafer 101 except that transistor 214 and 216 are N-type transistors.
• Transistor 214 includes an active region 215 formed in active layer 207.
• Active region 215 is doped with a P conductivity type dopant (e.g. boron) and includes a body 226 and two source/drain regions 217 and 219 that are counter doped to have an N+ type conductivity.
• An ILD 211 is located over a gate/contact layer 209.
• wafer 101 is inverted and bonded to wafer 201 in a "face- to-face" configuration to form a resultant wafer. In such a configuration, the transistors 114 and 116 are bonded in a face down configuration.
• Substrate 103 is then removed e.g. by grinding substrate 103 to about 50 microns of thickness and then by performing a follow up etch of Tetramethylammonioum Hydroxide (TMAH) to remove the remaining portion of substrate 103.
• TMAH Tetramethylammonioum Hydroxide
• Other types of enchants may be used for removing the remaining portion of the substrate in other embodiments.
• insulator 105 may be removed as well.
• Figure 3 is as partial side cutaway view of the resultant wafer 301 after wafer 101 has been bonded to wafer 201, substrate 103 has been removed, and a subsequent ILD 311 has been formed.
• a subsequent dielectric layer (not shown) e.g. of 200 nm may be deposited on insulator 105 to protect insulator 105 prior to forming ILD 311. In other embodiments, such a subsequent layer of dielectric is not utilized.
• the wafers are bonded with a bonding material 303 applied to ILD 211.
• the bonding material 303 is benzocyclobutene (BCB).
• the material is sold by the DOW CHEMICAL COMPANY under the trade name of CYCLOTENE
• bonding material 303 has a low Young's Modulus (e.g. 10 giga pascals or less). In one embodiment, bonding material 303 has a Young's Modulus of 2.9 giga pascals.
• layers 107 and 207 Prior to bonding, layers 107 and 207 have a form that is governed by the form of their respective substrates (e.g. 103 and 203) and a resulting strain governed by their respective substrates and BLDs and governed the processes by which they were made.
• the wafers have a slight upward bow (e.g. radius of curvature of 80-100 meters or more).
• substrate 103 When substrate 103 is removed, the stress on layer 107 provided by substrate 103 is removed, thereby making the strain on the active regions of layer 107 more compressive. Removal of substrate 103 causes the ILD 111 to provide a compressive stress on the active regions of layer 107, which causes the strain of the active regions of layer 107 to become more compressive.
• This compressive strain increases hole mobility for the channel regions (e.g. 120) of transistors built in those active regions.
• substrate 103 e.g. with a Young's modulus of 47 giga pascals for bulk silicon
• bonding material 303 e.g. with a Young's modulus of 2.9 giga pascals in one embodiment
• Providing an increased stress on the active regions of layer 107 provides for channel regions formed in those active regions to have a greater compressive strain, thereby having channel regions with greater hole mobility. Accordingly, P-channel devices whose channel regions are located in the active regions of layer 107 have a greater hole mobility than the transistors (e.g. 214 and 216) having channel regions in layer 207.
• bonding material 303 has a low Young's modulus which allows for the structure of wafer 201 to have a minimal effect on the strain of the active regions of layer 107. Thus, the active regions of layer 107 to have a more compressive strain than the active regions of layers 207.
• ILD 311 Prior to forming ILD 311, holes for vias 305 and 309 are formed through to interconnects 334 and 336 respectively of ILD 111. Holes are also formed through to interconnects 318 and 133, respectively, of ELD 111. After a layer of via metal is deposited to fill the holes, the resultant wafer 301 is polished (e.g. chemical mechanical polishing) for planarization and removal of excess metal exterior to the holes.
• interconnect layer (ILD) 311 is formed.
• ELD 311 includes interconnects 313 and 321 that couple the interconnects of ILD 111 with interconnects of ELD 211.
• ELD 311 includes pads (317 and 327) for external coupling of the transistors of the resultant wafer.
• a passivation layer 312 having openings (e.g. 319) for expositing the pads (e.g. 317) is located on ELD 311.
• vias may be formed to contact the backside of the source/drain regions (e.g. 119) of layer 107.
• Subsequent processing steps may be performed on wafer 301 such as e.g. forming conductive caps and singulation after individual integrated circuits.
• an integrated circuit may allow for an integrated circuit to have P-channels transistors with channel regions having a relatively more compressive strain to improve hole mobility and N-channel transistors having channel regions with a relatively more tensile strain for improved electron mobility.
• an integrated circuit may be made from wafer 301 where most, if not all, of the P-channel transistors are located in the remaining layers of wafer 101 and most, if not all, of the N-channel transistors are located in the layers of wafer 201.
• the P-channel transistors can be manufactured for increase hole mobility and the N-channel transistors can be manufactured for increased electron mobility.
• the strain of the channel regions of layer 107 is more compressive than the strain of the channel regions of layer 207.
• the compressive strain is in a lateral direction, relative to the view of Figure 3, but it may also be more compressive in the direction of into the page, relative to the view shown in Figure 3.
• Figure 3 shows an example of how one wafer is bonded in a face down configuration to another wafer in order to achieve a resultant wafer with channel regions in a first layer having a strain that is more compressive than the strain of the channel regions of a second layer.
• bonding a wafer in a face up configuration to another wafer may also achieve, in some embodiments, a resultant wafer with channel regions in a first layer having a strain that is more compressive than the strain of the channel regions of a second layer.
• the strain is slightly more compressive for a face up configuration than for a face down configuration.
• Figures 4-6 show three different stages during the manufacture of one embodiment of an integrated circuit having channel regions in different layers in a face up configuration.
• FIG. 4 shows a wafer having P-channel transistors that will be attached to another wafer in a face up configuration. Shown in Figure 4 are two P-channel transistors 414 and 416 located over insulator 405 and substrate 403.
• Transistor 414 includes an active region 415 formed in layer 407. Active region 415 is doped with an N conductivity type dopant (e.g. phosphorous or arsenic) and includes a body 426 and two source/drain regions 417 and 419 that are counter doped to have a P+ type conductivity.
• Transistor 414 includes a gate 421 (e.g. polysilicon or metal) located over the channel region 420 of active region 415.
• N conductivity type dopant e.g. phosphorous or arsenic
• Wafer 401 also includes an ELD 411 with interconnects 433, 429, 431, and 435.
• substrate 403, insulator 405, layer 407, layer 409 and ILD 411 are similar to substrate 103, insulator 105, layer 107, layer 109 and ELD 111 of wafer 101.
• oxide layer 452 is formed on ELD 411.
• oxide layer 452 is 20 nm thick and is utilized to protect ELD 411 in subsequent processing.
• Substrate 453 e.g. silicon
• bonding material 451 is BCB, but may include other types of bonding material in other embodiments.
• substrate 403 is removed e.g. by grinding and a subsequent etch. Wafer 401 is then bonded to another wafer in a face up configuration.
• Figure 5 is a partial side cutaway view after wafer 401 has been bonded to wafer 502 to form resultant wafer 501 in a face up configuration.
• Wafer 502 includes substrate 503, insulator 505, layer 507, layer 509, and ILD 511.
• ELD 511 includes interconnects 533, 531 , and 532.
• Wafer 502 includes two N channel transistors 514 and 516. In one embodiment, wafer 502 is similar to wafer 201.
• Wafer 401 is bonded to wafer 502 with bonding material 551.
• bonding material 551 is BCB, but may be of other types of bonding material including bonding material with a low Young's modulus in other embodiments.
• Figure 6 is as partial side cutaway view of the resultant wafer 501 after substrate 453, bonding material 451 and layer 452 have been removed.
• ILD 605 After the removal of layer 452 and prior to the formation of ILD 605, holes for vias 607 and 619 are formed through to interconnects 533 and 532, respectively of ELD 511. Holes are also formed through to interconnects 433, 429, 431, and 435, respectively, of ELD 411 for vias 611, 651, 653, and 614, respectively.
• a layer of via metal is deposited to fill the holes, the resultant wafer 501 is polished (e.g. chemical mechanical polishing) for planarization and removal of excess metal exterior to the holes. Afterwards ILD 605 is formed.
• ELD 605 includes interconnect 609 to couple interconnects 533 and 433 together and interconnect 621 to couple interconnect 435 and 532 together. Also, ELD 605 also includes pads 631 and 673 and vias 641 and 635 for external coupling of the transistors shown of resultant wafer 501. A passivation layer 661 is formed on ELD 605 and openings are made for exposing pads 631 and 673. In other embodiments, wafer 501 may include other types of external conductive structures. As with wafer 301, wafer 501 includes two layers 407 and 507 having channel regions of different strains. Accordingly, the channel regions of layer 407 have a strain that is relatively more compressive and therefore more beneficial for increased hole mobility and the channel regions of layer 507 have a strain that is relatively more tensile and therefore is more beneficial for electron mobility.
• the transistors shown in Figures 3 and 6 are utilized in an integrated circuit such as an integrated circuit implementing transistors in a complementary MOS (CMOS) configuration.
• CMOS complementary MOS
• layers 107, 207, 407, and 507 traverse the entire surface of their respective wafers. In other embodiments, these layers are localized to specific areas of the wafer to implement specific circuits (e.g. a processor core, memory, or timer) of an integrated circuit.
• an integrated circuit includes a substrate, a first layer located over the substrate, and a first plurality of channel regions implemented in the first layer. At least a substantial majority of the channel regions implemented in the first layer are for transistors of a first conductivity type.
• the integrated circuit also includes a bonding material over the first layer, a second layer over the bonding material, and a second plurality of channel regions implemented in the second layer. At least a substantial majority of the channel regions implemented in the second layer are for transistors of a second conductivity type.
• Another embodiment includes a method of forming an integrated circuit.
• the method includes providing a first wafer including a first layer. At least a substantial majority of the transistors having channel regions in the first layer are of a first conductivity type.
• the method also includes bonding a second wafer to the first wafer.
• the second wafer includes a second layer. At least a substantial majority of the transistors having channel regions in the second layer are of a second conductivity type.
• the method further includes removing a portion of the second wafer subsequent the bonding.
• Another embodiment also includes a method of forming a integrated circuit.
• the method includes providing a first wafer comprising a first layer, a first insulator, and a first substrate.
• the first insulator is located between the first layer and the first substrate.
• the method also includes forming source/drain regions in the first layer. At least a substantial majority of the source/drain regions are of a first conductivity type.
• the method further includes providing a second wafer comprising a second layer, a second insulator, and a second substrate.
• the second insulator located between the second layer and the second substrate.
• the method still further includes forming source/drain regions in the second layer. At least a substantial majority of the source/drain regions are of a second conductivity type.
• the method also includes bonding the first wafer to the second wafer subsequent to the forming the source/drain regions in the first layer and the forming the source/drain regions in the second layer.
• the bonding includes bonding with a material having a low Young's modulus.
• the method includes removing the second substrate subsequent to bonding the first wafer to the second wafer.

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• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Thin Film Transistor (AREA)
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