KR101149134B1 - 개별 변형된 ｎ-채널 및 ｐ-채널 트랜지스터 - Google Patents

개별 변형된 ｎ-채널 및 ｐ-채널 트랜지스터 Download PDF

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KR101149134B1
KR101149134B1 KR1020067027473A KR20067027473A KR101149134B1 KR 101149134 B1 KR101149134 B1 KR 101149134B1 KR 1020067027473 A KR1020067027473 A KR 1020067027473A KR 20067027473 A KR20067027473 A KR 20067027473A KR 101149134 B1 KR101149134 B1 KR 101149134B1
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layer
wafer
bonding
transistors
conductivity type
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Expired - Fee Related
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Korean (ko)
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KR20070022809A (ko
Inventor
스콧 케이. 포즈더
샐리 엠. 셀리크
병 더블유. 민
반스 에이치. 아담스
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
KR1020067027473A 2004-05-28 2005-04-26 개별 변형된 ｎ-채널 및 ｐ-채널 트랜지스터 Expired - Fee Related KR101149134B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/856,581 US7041576B2 (en) 2004-05-28 2004-05-28 Separately strained N-channel and P-channel transistors
US10/856,581 2004-05-28
PCT/US2005/014325 WO2005119746A1 (en) 2004-05-28 2005-04-26 Separately strained n-channel and p-channel transistors

Publications (2)

Publication Number Publication Date
KR20070022809A KR20070022809A (ko) 2007-02-27
KR101149134B1 true KR101149134B1 (ko) 2012-05-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067027473A Expired - Fee Related KR101149134B1 (ko) 2004-05-28 2005-04-26 개별 변형된 ｎ-채널 및 ｐ-채널 트랜지스터

Country Status (7)

Country Link
US (1) US7041576B2 (enExample)
EP (1) EP1749311A4 (enExample)
JP (1) JP4744514B2 (enExample)
KR (1) KR101149134B1 (enExample)
CN (1) CN100508130C (enExample)
TW (1) TWI416702B (enExample)
WO (1) WO2005119746A1 (enExample)

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US7514767B2 (en) * 2003-12-03 2009-04-07 Advanced Chip Engineering Technology Inc. Fan out type wafer level package structure and method of the same
US7459781B2 (en) * 2003-12-03 2008-12-02 Wen-Kun Yang Fan out type wafer level package structure and method of the same
US7348658B2 (en) * 2004-08-30 2008-03-25 International Business Machines Corporation Multilayer silicon over insulator device
US8013342B2 (en) 2007-11-14 2011-09-06 International Business Machines Corporation Double-sided integrated circuit chips
US7670927B2 (en) * 2006-05-16 2010-03-02 International Business Machines Corporation Double-sided integrated circuit chips
KR100789570B1 (ko) * 2006-08-23 2007-12-28 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
US7485508B2 (en) * 2007-01-26 2009-02-03 International Business Machines Corporation Two-sided semiconductor-on-insulator structures and methods of manufacturing the same
US7800150B2 (en) * 2007-05-29 2010-09-21 United Microelectronics Corp. Semiconductor device
US8288756B2 (en) * 2007-11-30 2012-10-16 Advanced Micro Devices, Inc. Hetero-structured, inverted-T field effect transistor
US20090289280A1 (en) * 2008-05-22 2009-11-26 Da Zhang Method for Making Transistors and the Device Thereof
US8003454B2 (en) * 2008-05-22 2011-08-23 Freescale Semiconductor, Inc. CMOS process with optimized PMOS and NMOS transistor devices
US8193559B2 (en) * 2009-01-27 2012-06-05 Infineon Technologies Austria Ag Monolithic semiconductor switches and method for manufacturing
TWI478319B (zh) * 2010-07-20 2015-03-21 晶元光電股份有限公司 整合式發光裝置及其製造方法
DE102010045055B4 (de) * 2010-09-10 2019-03-28 Austriamicrosystems Ag Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Durchkontaktierung
US8421193B2 (en) * 2010-11-18 2013-04-16 Nanya Technology Corporation Integrated circuit device having through via and method for preparing the same
US9947688B2 (en) * 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
US8664756B2 (en) 2012-07-24 2014-03-04 Medtronic, Inc. Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability
US8803292B2 (en) 2012-04-27 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Through-substrate vias and methods for forming the same
US8624324B1 (en) 2012-08-10 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Connecting through vias to devices
US10128269B2 (en) 2013-11-08 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for a semiconductor structure having multiple semiconductor-device layers
US10163897B2 (en) * 2013-11-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Inter-level connection for multi-layer structures
KR102530338B1 (ko) * 2016-12-15 2023-05-08 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US11869890B2 (en) * 2017-12-26 2024-01-09 Intel Corporation Stacked transistors with contact last
US11430814B2 (en) 2018-03-05 2022-08-30 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
KR102746120B1 (ko) 2019-03-11 2024-12-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11158738B2 (en) * 2019-06-18 2021-10-26 Samsung Electronics Co., Ltd Method of forming isolation dielectrics for stacked field effect transistors (FETs)
WO2022201497A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、半導体装置、集積回路要素、及び、集積回路要素の製造方法
US12431469B2 (en) * 2022-02-11 2025-09-30 International Business Machines Corporation Vertically stacked FET with strained channel

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Also Published As

Publication number Publication date
CN100508130C (zh) 2009-07-01
US7041576B2 (en) 2006-05-09
EP1749311A1 (en) 2007-02-07
TW200614489A (en) 2006-05-01
US20050275017A1 (en) 2005-12-15
JP2008501239A (ja) 2008-01-17
TWI416702B (zh) 2013-11-21
CN1954410A (zh) 2007-04-25
JP4744514B2 (ja) 2011-08-10
KR20070022809A (ko) 2007-02-27
EP1749311A4 (en) 2010-01-13
WO2005119746A1 (en) 2005-12-15

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