JP2010262977A5 - - Google Patents

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Publication number
JP2010262977A5
JP2010262977A5 JP2009110663A JP2009110663A JP2010262977A5 JP 2010262977 A5 JP2010262977 A5 JP 2010262977A5 JP 2009110663 A JP2009110663 A JP 2009110663A JP 2009110663 A JP2009110663 A JP 2009110663A JP 2010262977 A5 JP2010262977 A5 JP 2010262977A5
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JP
Japan
Prior art keywords
region
misfet
insulating film
metal
film
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Application number
JP2009110663A
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English (en)
Japanese (ja)
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JP2010262977A (ja
JP5329294B2 (ja
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Application filed filed Critical
Priority to JP2009110663A priority Critical patent/JP5329294B2/ja
Priority claimed from JP2009110663A external-priority patent/JP5329294B2/ja
Priority to TW099109213A priority patent/TWI449132B/zh
Priority to US12/755,058 priority patent/US8293632B2/en
Publication of JP2010262977A publication Critical patent/JP2010262977A/ja
Publication of JP2010262977A5 publication Critical patent/JP2010262977A5/ja
Application granted granted Critical
Publication of JP5329294B2 publication Critical patent/JP5329294B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009110663A 2009-04-30 2009-04-30 半導体装置の製造方法 Expired - Fee Related JP5329294B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009110663A JP5329294B2 (ja) 2009-04-30 2009-04-30 半導体装置の製造方法
TW099109213A TWI449132B (zh) 2009-04-30 2010-03-26 Manufacturing method of semiconductor device
US12/755,058 US8293632B2 (en) 2009-04-30 2010-04-06 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009110663A JP5329294B2 (ja) 2009-04-30 2009-04-30 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013153766A Division JP5866319B2 (ja) 2013-07-24 2013-07-24 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010262977A JP2010262977A (ja) 2010-11-18
JP2010262977A5 true JP2010262977A5 (enExample) 2012-04-12
JP5329294B2 JP5329294B2 (ja) 2013-10-30

Family

ID=43030710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009110663A Expired - Fee Related JP5329294B2 (ja) 2009-04-30 2009-04-30 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US8293632B2 (enExample)
JP (1) JP5329294B2 (enExample)
TW (1) TWI449132B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5268829B2 (ja) * 2009-08-21 2013-08-21 パナソニック株式会社 半導体装置
JP2011100822A (ja) * 2009-11-05 2011-05-19 Hitachi High-Technologies Corp 半導体素子加工方法
JP5449026B2 (ja) * 2010-05-24 2014-03-19 パナソニック株式会社 半導体装置及びその製造方法
JP2012049227A (ja) * 2010-08-25 2012-03-08 Renesas Electronics Corp 半導体集積回路装置および半導体集積回路装置の製造方法
JP2012209331A (ja) * 2011-03-29 2012-10-25 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
KR20130017664A (ko) * 2011-08-11 2013-02-20 삼성전자주식회사 금속 패턴 형성 방법 및 반도체 소자의 제조 방법
EP2717308A1 (en) * 2012-10-08 2014-04-09 Imec A method for manufacturing a dual work function semiconductor device
US9190409B2 (en) 2013-02-25 2015-11-17 Renesas Electronics Corporation Replacement metal gate transistor with controlled threshold voltage
CN113809012B (zh) 2020-06-12 2024-02-09 长鑫存储技术有限公司 半导体器件及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI250583B (en) * 1997-03-05 2006-03-01 Hitachi Ltd Manufacturing method for semiconductor integrated circuit device
JP3998665B2 (ja) * 2004-06-16 2007-10-31 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP4854245B2 (ja) * 2005-09-22 2012-01-18 東京エレクトロン株式会社 半導体装置の製造方法
US7569466B2 (en) * 2005-12-16 2009-08-04 International Business Machines Corporation Dual metal gate self-aligned integration
JP2007234861A (ja) * 2006-03-01 2007-09-13 Renesas Technology Corp 半導体装置の製造方法
JP2007243009A (ja) * 2006-03-10 2007-09-20 Renesas Technology Corp 半導体装置およびその製造方法
JP2007335834A (ja) * 2006-05-15 2007-12-27 Toshiba Corp 半導体装置およびその製造方法
JP4282691B2 (ja) * 2006-06-07 2009-06-24 株式会社東芝 半導体装置
TWI492367B (zh) * 2007-12-03 2015-07-11 Renesas Electronics Corp Ｃｍｏｓ半導體裝置之製造方法
JP5288789B2 (ja) * 2007-12-28 2013-09-11 株式会社東芝 半導体装置及びその製造方法
JP2009194352A (ja) * 2008-01-17 2009-08-27 Toshiba Corp 半導体装置の製造方法
JP2009283770A (ja) * 2008-05-23 2009-12-03 Renesas Technology Corp 半導体装置の製造方法
US7994036B2 (en) * 2008-07-01 2011-08-09 Panasonic Corporation Semiconductor device and fabrication method for the same
JP5314964B2 (ja) * 2008-08-13 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2010103130A (ja) * 2008-10-21 2010-05-06 Panasonic Corp 半導体装置及びその製造方法
JP2010177265A (ja) * 2009-01-27 2010-08-12 Fujitsu Semiconductor Ltd 半導体装置の製造方法
JP2010238685A (ja) * 2009-03-30 2010-10-21 Fujitsu Semiconductor Ltd 半導体装置の製造方法

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