JP5329294B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5329294B2
JP5329294B2 JP2009110663A JP2009110663A JP5329294B2 JP 5329294 B2 JP5329294 B2 JP 5329294B2 JP 2009110663 A JP2009110663 A JP 2009110663A JP 2009110663 A JP2009110663 A JP 2009110663A JP 5329294 B2 JP5329294 B2 JP 5329294B2
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JP
Japan
Prior art keywords
film
insulating film
containing insulating
metal
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009110663A
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English (en)
Japanese (ja)
Other versions
JP2010262977A (ja
JP2010262977A5 (enExample
Inventor
勝 門島
真介 坂下
孝昭 川原
二郎 由上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009110663A priority Critical patent/JP5329294B2/ja
Priority to TW099109213A priority patent/TWI449132B/zh
Priority to US12/755,058 priority patent/US8293632B2/en
Publication of JP2010262977A publication Critical patent/JP2010262977A/ja
Publication of JP2010262977A5 publication Critical patent/JP2010262977A5/ja
Application granted granted Critical
Publication of JP5329294B2 publication Critical patent/JP5329294B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009110663A 2009-04-30 2009-04-30 半導体装置の製造方法 Expired - Fee Related JP5329294B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009110663A JP5329294B2 (ja) 2009-04-30 2009-04-30 半導体装置の製造方法
TW099109213A TWI449132B (zh) 2009-04-30 2010-03-26 Manufacturing method of semiconductor device
US12/755,058 US8293632B2 (en) 2009-04-30 2010-04-06 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009110663A JP5329294B2 (ja) 2009-04-30 2009-04-30 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013153766A Division JP5866319B2 (ja) 2013-07-24 2013-07-24 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010262977A JP2010262977A (ja) 2010-11-18
JP2010262977A5 JP2010262977A5 (enExample) 2012-04-12
JP5329294B2 true JP5329294B2 (ja) 2013-10-30

Family

ID=43030710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009110663A Expired - Fee Related JP5329294B2 (ja) 2009-04-30 2009-04-30 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US8293632B2 (enExample)
JP (1) JP5329294B2 (enExample)
TW (1) TWI449132B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5268829B2 (ja) * 2009-08-21 2013-08-21 パナソニック株式会社 半導体装置
JP2011100822A (ja) * 2009-11-05 2011-05-19 Hitachi High-Technologies Corp 半導体素子加工方法
JP5449026B2 (ja) * 2010-05-24 2014-03-19 パナソニック株式会社 半導体装置及びその製造方法
JP2012049227A (ja) * 2010-08-25 2012-03-08 Renesas Electronics Corp 半導体集積回路装置および半導体集積回路装置の製造方法
JP2012209331A (ja) * 2011-03-29 2012-10-25 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
KR20130017664A (ko) * 2011-08-11 2013-02-20 삼성전자주식회사 금속 패턴 형성 방법 및 반도체 소자의 제조 방법
EP2717308A1 (en) * 2012-10-08 2014-04-09 Imec A method for manufacturing a dual work function semiconductor device
US9190409B2 (en) 2013-02-25 2015-11-17 Renesas Electronics Corporation Replacement metal gate transistor with controlled threshold voltage
CN113809012B (zh) 2020-06-12 2024-02-09 长鑫存储技术有限公司 半导体器件及其制造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI250583B (en) * 1997-03-05 2006-03-01 Hitachi Ltd Manufacturing method for semiconductor integrated circuit device
JP3998665B2 (ja) * 2004-06-16 2007-10-31 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP4854245B2 (ja) * 2005-09-22 2012-01-18 東京エレクトロン株式会社 半導体装置の製造方法
US7569466B2 (en) * 2005-12-16 2009-08-04 International Business Machines Corporation Dual metal gate self-aligned integration
JP2007234861A (ja) * 2006-03-01 2007-09-13 Renesas Technology Corp 半導体装置の製造方法
JP2007243009A (ja) * 2006-03-10 2007-09-20 Renesas Technology Corp 半導体装置およびその製造方法
JP2007335834A (ja) * 2006-05-15 2007-12-27 Toshiba Corp 半導体装置およびその製造方法
JP4282691B2 (ja) * 2006-06-07 2009-06-24 株式会社東芝 半導体装置
TWI492367B (zh) * 2007-12-03 2015-07-11 Renesas Electronics Corp Ｃｍｏｓ半導體裝置之製造方法
JP5288789B2 (ja) * 2007-12-28 2013-09-11 株式会社東芝 半導体装置及びその製造方法
JP2009194352A (ja) * 2008-01-17 2009-08-27 Toshiba Corp 半導体装置の製造方法
JP2009283770A (ja) * 2008-05-23 2009-12-03 Renesas Technology Corp 半導体装置の製造方法
US7994036B2 (en) * 2008-07-01 2011-08-09 Panasonic Corporation Semiconductor device and fabrication method for the same
JP5314964B2 (ja) * 2008-08-13 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2010103130A (ja) * 2008-10-21 2010-05-06 Panasonic Corp 半導体装置及びその製造方法
JP2010177265A (ja) * 2009-01-27 2010-08-12 Fujitsu Semiconductor Ltd 半導体装置の製造方法
JP2010238685A (ja) * 2009-03-30 2010-10-21 Fujitsu Semiconductor Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI449132B (zh) 2014-08-11
JP2010262977A (ja) 2010-11-18
US20100279496A1 (en) 2010-11-04
TW201044508A (en) 2010-12-16
US8293632B2 (en) 2012-10-23

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