JP2011100822A - 半導体素子加工方法 - Google Patents
半導体素子加工方法 Download PDFInfo
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- JP2011100822A JP2011100822A JP2009253910A JP2009253910A JP2011100822A JP 2011100822 A JP2011100822 A JP 2011100822A JP 2009253910 A JP2009253910 A JP 2009253910A JP 2009253910 A JP2009253910 A JP 2009253910A JP 2011100822 A JP2011100822 A JP 2011100822A
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000001312 dry etching Methods 0.000 claims abstract description 34
- 238000001039 wet etching Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 238000003672 processing method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 229910004200 TaSiN Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 32
- 238000005530 etching Methods 0.000 description 17
- 239000007864 aqueous solution Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000004435 EPR spectroscopy Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】Si基板上に形成されたHfあるいはZrを含む絶縁膜とその上層あるいは下層あるいは膜中に存在するMg,YあるいはAlとを含む堆積膜の除去を、ドライエッチングとウエットエッチングを、ウエットエッチングを先にして少なくとも1回繰り返して行う。
【選択図】図1
Description
本発明の半導体素子加工方法は、Si基板上に形成されたhigh-k絶縁膜と仕事関数を制御するための物質とを含む堆積膜の上に、金属の電極が配置されたメタルゲート構造を有する半導体素子の加工方法であって、前記high-k絶縁膜と前記仕事関数を制御するための物質を含む前記堆積膜の除去のために、ウエットエッチングとドライエッチングとを少なくとも1回行い、かつ前記除去の工程を前記ウエットエッチングから開始することを特徴とする。
Claims (8)
- Si基板上に形成されたhigh-k絶縁膜と仕事関数を制御するための物質とを含む堆積膜の上に、金属の電極が配置されたメタルゲート構造を有する半導体素子の加工方法であって、
前記high-k絶縁膜と前記仕事関数を制御するための物質を含む前記堆積膜の除去のために、ウエットエッチングとドライエッチングとを少なくとも1回行い、かつ前記除去の工程を前記ウエットエッチングから開始することを特徴とする半導体素子加工方法。 - 請求項1に記載の前記堆積膜の除去のためのウエットエッチングとドライエッチングは、前記半導体素子の被処理面上における残渣がなくなるまで交互に繰り返すことを特徴とする半導体素子加工方法。
- 請求項1に記載の前記high-k絶縁膜は、HfあるいはZrの酸化物であり、前記仕事関数を制御するための物質は、Mg,YあるいはAlであることを特徴とする半導体素子加工方法。
- 請求項1に記載の前記仕事関数を制御するための物質は、前記high-k絶縁膜に混合していることを特徴とする半導体素子加工方法。
- 請求項1に記載の前記仕事関数を制御するための物質を含む膜は、前記high-k絶縁膜の上層あるいは下層に堆積されていることを特徴とする半導体素子加工方法。
- 請求項1に記載の前記high-k絶縁膜がHf酸化物あるいはZr酸化物であり、かつ、前記仕事関数を制御する物質がMgあるいはAlの場合は、前記ウエットエッチングをHFガス、前記ドライエッチングをBCl3とCl2の混合ガスで行うことを特徴とする半導体素子加工方法。
- 請求項1に記載の前記絶縁膜の組成がHf酸化物あるいはZr酸化物であり、前記仕事関数を制御する物質がYの場合は、前記ウエットエッチングをHNO3ガス、前記ドライエッチングをBCl3とBCl3の混合ガスで行うことを特徴とする半導体素子加工方法。
- 請求項1から7のいずれかにおいて、前記メタルゲートの材料がTiNあるいはTaNの場合はCl2ガスにてドライエッチングを行い、TaSiNの場合はCF4、SF6あるいはNF3ガスにて前記メタルゲートのドライエッチングを行うことを特徴とする半導体素子加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009253910A JP2011100822A (ja) | 2009-11-05 | 2009-11-05 | 半導体素子加工方法 |
TW099100923A TW201117291A (en) | 2009-11-05 | 2010-01-14 | Method for processing semiconductor device |
US12/694,394 US8501608B2 (en) | 2009-11-05 | 2010-01-27 | Method for processing semiconductor device |
KR1020100007842A KR101133697B1 (ko) | 2009-11-05 | 2010-01-28 | 반도체소자 가공방법 |
Applications Claiming Priority (1)
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JP2009253910A JP2011100822A (ja) | 2009-11-05 | 2009-11-05 | 半導体素子加工方法 |
Publications (2)
Publication Number | Publication Date |
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JP2011100822A true JP2011100822A (ja) | 2011-05-19 |
JP2011100822A5 JP2011100822A5 (ja) | 2013-07-04 |
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JP2009253910A Pending JP2011100822A (ja) | 2009-11-05 | 2009-11-05 | 半導体素子加工方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8501608B2 (ja) |
JP (1) | JP2011100822A (ja) |
KR (1) | KR101133697B1 (ja) |
TW (1) | TW201117291A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112012004523T5 (de) * | 2011-10-28 | 2014-08-14 | Stmicroelectronics S.R.L. | Verfahren zur Herstellung einer Schutzschicht gegen HF-Ätzen, mit der Schutzschicht ausgestattete Halbleitervorrichtung, und Verfahren zur Herstellung der Halbleitervorrichtung |
JP6163446B2 (ja) * | 2014-03-27 | 2017-07-12 | 株式会社東芝 | 半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005013374A1 (ja) * | 2003-08-05 | 2005-02-10 | Fujitsu Limited | 半導体装置および半導体装置の製造方法 |
JP2007115732A (ja) * | 2005-10-18 | 2007-05-10 | Renesas Technology Corp | エッチング液およびそれを用いた半導体装置の製造方法 |
JP2010262977A (ja) * | 2009-04-30 | 2010-11-18 | Renesas Electronics Corp | 半導体装置の製造方法 |
Family Cites Families (8)
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US6800326B1 (en) * | 1997-01-14 | 2004-10-05 | Seiko Epson Corporation | Method of treating a surface of a surface of a substrate containing titanium for an ornament |
US6245684B1 (en) * | 1998-03-13 | 2001-06-12 | Applied Materials, Inc. | Method of obtaining a rounded top trench corner for semiconductor trench etch applications |
JP2000252259A (ja) | 1999-02-25 | 2000-09-14 | Sony Corp | ドライエッチング方法及び半導体装置の製造方法 |
JP4152271B2 (ja) | 2003-07-24 | 2008-09-17 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US20050081781A1 (en) * | 2003-10-17 | 2005-04-21 | Taiwan Semiconductor Manufacturing Co. | Fully dry, Si recess free process for removing high k dielectric layer |
US20050260804A1 (en) * | 2004-05-24 | 2005-11-24 | Tae-Wook Kang | Semiconductor device and method of fabricating the same |
KR20080018711A (ko) | 2006-08-25 | 2008-02-28 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US7820552B2 (en) * | 2007-03-13 | 2010-10-26 | International Business Machines Corporation | Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack |
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2009
- 2009-11-05 JP JP2009253910A patent/JP2011100822A/ja active Pending
-
2010
- 2010-01-14 TW TW099100923A patent/TW201117291A/zh unknown
- 2010-01-27 US US12/694,394 patent/US8501608B2/en not_active Expired - Fee Related
- 2010-01-28 KR KR1020100007842A patent/KR101133697B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005013374A1 (ja) * | 2003-08-05 | 2005-02-10 | Fujitsu Limited | 半導体装置および半導体装置の製造方法 |
JP2007115732A (ja) * | 2005-10-18 | 2007-05-10 | Renesas Technology Corp | エッチング液およびそれを用いた半導体装置の製造方法 |
JP2010262977A (ja) * | 2009-04-30 | 2010-11-18 | Renesas Electronics Corp | 半導体装置の製造方法 |
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Publication number | Publication date |
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US8501608B2 (en) | 2013-08-06 |
TW201117291A (en) | 2011-05-16 |
KR101133697B1 (ko) | 2012-04-06 |
KR20110049619A (ko) | 2011-05-12 |
US20110104882A1 (en) | 2011-05-05 |
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