JP5247115B2 - 半導体デバイスにおけるDyScO材料の選択的除去 - Google Patents
半導体デバイスにおけるDyScO材料の選択的除去 Download PDFInfo
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- JP5247115B2 JP5247115B2 JP2007275170A JP2007275170A JP5247115B2 JP 5247115 B2 JP5247115 B2 JP 5247115B2 JP 2007275170 A JP2007275170 A JP 2007275170A JP 2007275170 A JP2007275170 A JP 2007275170A JP 5247115 B2 JP5247115 B2 JP 5247115B2
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- 239000000463 material Substances 0.000 title claims description 150
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 84
- 239000000758 substrate Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 62
- 150000002910 rare earth metals Chemical class 0.000 claims description 43
- 238000000059 patterning Methods 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 238000001039 wet etching Methods 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 203
- 239000000460 chlorine Substances 0.000 description 55
- 238000005660 chlorination reaction Methods 0.000 description 26
- 238000005530 etching Methods 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 19
- 229910052801 chlorine Inorganic materials 0.000 description 18
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 17
- 229910052692 Dysprosium Inorganic materials 0.000 description 17
- 229910052706 scandium Inorganic materials 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- -1 rare earth scandium compound Chemical class 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000011065 in-situ storage Methods 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 230000031709 bromination Effects 0.000 description 6
- 238000005893 bromination reaction Methods 0.000 description 6
- 229910052794 bromium Inorganic materials 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910004129 HfSiO Inorganic materials 0.000 description 3
- 229910052689 Holmium Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 229910052775 Thulium Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- SYKNUAWMBRIEKB-UHFFFAOYSA-N [Cl].[Br] Chemical compound [Cl].[Br] SYKNUAWMBRIEKB-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- NJOPPKGMYWXXLJ-UHFFFAOYSA-N COCC(C)(O[Dy](OC(COC)(C)C)OC(COC)(C)C)C Chemical compound COCC(C)(O[Dy](OC(COC)(C)C)OC(COC)(C)C)C NJOPPKGMYWXXLJ-UHFFFAOYSA-N 0.000 description 1
- ABEMZNOFHMYEKL-UHFFFAOYSA-N COCC(C)(O[Sc])C Chemical compound COCC(C)(O[Sc])C ABEMZNOFHMYEKL-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- HJGMWXTVGKLUAQ-UHFFFAOYSA-N oxygen(2-);scandium(3+) Chemical class [O-2].[O-2].[O-2].[Sc+3].[Sc+3] HJGMWXTVGKLUAQ-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
Description
DyScO3層を原子層堆積装置(AVD(登録商標))により形成する。AVD(登録商標)は、分離した、独立のインジェクタから、パルスモードで前駆物質を導入する。DI H2O/O3溶液中で形成された薄いSiO2層上に全ての層を形成した。この処理により、約0.8nmの膜厚のSiO2層が得られ、通常これは”IMEC−クリーン”出発表面と称される。実験において、AVD(登録商標)によりDyScO層を形成するために使用される前駆物質は、Dy(mmp)3(トリス(1−メトキシ−2−メチル−2−プロポキシ)ディスプロシウム、Dy(OC(CH3)2CH2OCH3)3)及びSc(mmp)3([トリス(1−メトキシ−2−メチル−2−プロポキシ)スカンジウム、Sc(OC(CH3)2CH2OCH3)3])である。図2において、Dy/Scの比率が80/20であるDyScOについての成長曲線を示す。膜厚と注入されたパルスの全体の回数との間には、直線関係が見られる。Scパルスに対して注入されたDyの割合を変化させることにより、形成される層の組成を変更することができ、これらの前駆物質により、純粋なDy2O3から純粋なSc2O3までの範囲に及ぶ層を析出することができることが示された。Sc前駆物質の効率は、Dy前駆物質と比較して6倍以上高いことが分かった。結果として、0.86と等しい前駆物質のパルス比率[Dy/(Dy+Sc)]では、50/50の組成が得られる。5nm未満の膜厚の層について3〜5%の実効膜厚値を有する層は、原子間力顕微鏡による測定により、非常に滑らかであることが分かった。前駆物質は、0.1Mの濃度のトルエンに(安定化剤としてテトラグリムを使用して)溶解した。
原子層堆積法(AVD(登録商標))により形成されたDyScO3層を備えるウェハをラム ヴェルシス2300TCPエッチング反応炉内でエッチングした。当該炉は、プラズマのパワー及び基板のバイアスを別々に制御することができる。当該エッチングは、2つのガス、Cl2若しくはBCl3のいずれかを使用して、プラズマパワー450W、基板バイアス−30V、圧力10mTで30秒間実行した。エッチングの前及び後の当該層の厚さを分光偏光解析法により測定した。その後、当該エッチングされた層を10分間DIウォータリンスにさらし、膜厚を再び測定した。
Claims (18)
- 基板上で希土類元素含有層を少なくとも部分的に除去するための方法であって、
基板を準備する工程と、
上記基板上に上記希土類元素含有層を形成する工程と、
上記希土類元素含有層の少なくとも一部を露出させるために、感光性イメージング層を形成しマスク構造を形成する工程と、
上記の希土類元素含有層の露出部分にCl含有及び/又はBr含有プラズマをさらし、上記の露出される希土類元素含有層の少なくとも一部を塩化物化又は臭化物化する工程と、
上記の希土類元素含有層の塩化物化又は臭化物化された部分をウェットエッチングを用いて除去する工程と、
を備え、
上記希土類元素含有層は、DyScO3、LaScO3、PrScO3、NdScO3、GdScO3、TbScO3、HoScO3、ErScO3、TmScO3、YbScO3、及びLuScO3の少なくとも1種から選択されるスカンジウム酸化物を含む高k材料であることを特徴とする方法。 - 上記の希土類元素含有層の露出部分にさらす工程が、異方性ドライエッチングプラズマを使用して実行されることを特徴とする請求項1記載の方法。
- 上記の希土類元素含有層の少なくとも一部の除去が、希土類元素含有層にゲート構造をパターニングすることに関連することを特徴とする請求項1記載の方法。
- 上記希土類元素含有層が高kゲート誘電体層であり、
その構造が半導体デバイスにおけるゲート構造であることを特徴とする請求項3記載の方法。 - 上記希土類元素含有層が高k誘電体層であり、
上記高k誘電体層の形成工程の後、さらに、
上記高k誘電体層上にゲート電極層を形成する工程と、
ゲート構造を形成するため、感光性イメージング層を形成し、上記感光性イメージング層にフォトリソグラフパターンを転写する工程と、
上記ゲート電極層に上記ゲート構造のパターンを転写する工程と、
を備えることを特徴とする請求項1記載の方法。 - 上記ゲート電極層がTaN、TiN、TaN/TiN層の一つであることを特徴とする請求項5記載の方法。
- 上記の希土類元素含有層の露出部分にさらす工程が、Cl及び/又はBr含有プラズマを使用して上記ゲート電極層に上記ゲート構造を転写する工程の間に、異方性ドライエッチングプラズマにより実行され、上記希土類元素含有層の露出部分が塩化物化又は臭化物化されることを特徴とする請求項5記載の方法。
- 上記希土類元素含有層が、DyScO3を含む高k材料層であることを特徴とする請求項1記載の方法。
- 上記Cl含有プラズマがCl2若しくはBCl3含有プラズマであることを特徴とする請求項1記載の方法。
- 上記Br含有プラズマが、Br2若しくはHBr含有プラズマであることを特徴とする請求項1〜9のいずれかに記載の方法。
- 上記の塩化物化又は臭化物化された希土類元素含有層の一部を取り除く工程の後、さらに、上記感光性イメージング層の残りの部分を除去する工程を備えることを特徴とする請求項1記載の方法。
- 上記基板が、シリコンウェハであることを特徴とする請求項1記載の方法。
- 上記ウェットエッチングが、ウォータベースのリンスにより行われることを特徴とする請求項1記載の方法。
- 上記の高k材料層の露出部分にCl及び/又はBr含有プラズマをさらす工程の間の基板バイアスが、−30Vであることを特徴とする請求項1記載の方法。
- 上記の高k材料層の露出部分にCl及び/又はBr含有プラズマをさらす工程の間のプラズマパワーが、100W〜1200Wの範囲にあることを特徴とする請求項1記載の方法。
- 上記の高k材料層の露出部分にCl及び/又はBr含有プラズマをさらす工程の間のプラズマパワーが、450Wであることを特徴とする請求項1記載の方法。
- 上記の高k材料層の露出部分にCl及び/又はBr含有プラズマをさらす工程の間のプラズマ圧力が、10mT(1.333Pa)〜80mT(10.665Pa)であることを特徴とする請求項1記載の方法。
- 半導体装置においてゲート構造をパターニングするために用いられる、請求項1に係る方法。
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7073158B2 (en) * | 2002-05-17 | 2006-07-04 | Pixel Velocity, Inc. | Automated system for designing and developing field programmable gate arrays |
US20080036864A1 (en) * | 2006-08-09 | 2008-02-14 | Mccubbrey David | System and method for capturing and transmitting image data streams |
US20080151049A1 (en) * | 2006-12-14 | 2008-06-26 | Mccubbrey David L | Gaming surveillance system and method of extracting metadata from multiple synchronized cameras |
WO2008103850A2 (en) * | 2007-02-21 | 2008-08-28 | Pixel Velocity, Inc. | Scalable system for wide area surveillance |
US20090086023A1 (en) * | 2007-07-18 | 2009-04-02 | Mccubbrey David L | Sensor system including a configuration of the sensor as a virtual sensor device |
JP2009152439A (ja) * | 2007-12-21 | 2009-07-09 | Elpida Memory Inc | 半導体装置の製造方法 |
JP2011527124A (ja) * | 2008-07-06 | 2011-10-20 | アイメック | 半導体構造のドープ方法およびその半導体デバイス |
KR20100081764A (ko) * | 2009-01-07 | 2010-07-15 | 삼성전자주식회사 | 반도체 집적 회로 장치의 제조 방법 |
US8101525B2 (en) * | 2009-02-13 | 2012-01-24 | Applied Materials, Inc. | Method for fabricating a semiconductor device having a lanthanum-family-based oxide layer |
JP5592083B2 (ja) | 2009-06-12 | 2014-09-17 | アイメック | 基板処理方法およびそれを用いた半導体装置の製造方法 |
EP2499827A4 (en) * | 2009-11-13 | 2018-01-03 | Pixel Velocity, Inc. | Method for tracking an object through an environment across multiple cameras |
US8329585B2 (en) * | 2009-11-17 | 2012-12-11 | Lam Research Corporation | Method for reducing line width roughness with plasma pre-etch treatment on photoresist |
RU2450385C1 (ru) * | 2010-10-13 | 2012-05-10 | Открытое акционерное общество "НИИ молекулярной электроники и завод "Микрон" | Состав газовой смеси для формирования нитрид танталового металлического затвора методом плазмохимического травления |
US9589827B2 (en) * | 2014-06-16 | 2017-03-07 | International Business Machines Corporation | Shallow trench isolation regions made from crystalline oxides |
US9455317B1 (en) | 2015-06-24 | 2016-09-27 | International Business Machines Corporation | Nanowire semiconductor device including lateral-etch barrier region |
CN106865488B (zh) * | 2017-02-08 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | 锗层图形化方法及硅基mems运动传感器的制造方法 |
US10720516B2 (en) * | 2017-06-30 | 2020-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate stack structure and method for forming the same |
JP7250397B2 (ja) * | 2017-08-11 | 2023-04-03 | 東京エレクトロン株式会社 | ハロゲン不活性化を使用した選択的膜堆積 |
WO2019244174A2 (en) * | 2018-06-22 | 2019-12-26 | Indian Institute Of Technology Bombay | Method for fabricating germanium/silicon on insulator in radio frequency sputter system |
JP7199174B2 (ja) * | 2018-07-26 | 2023-01-05 | 東京エレクトロン株式会社 | エッチング方法 |
KR102623838B1 (ko) | 2018-08-20 | 2024-01-11 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN111653477A (zh) * | 2020-05-09 | 2020-09-11 | 中国科学院微电子研究所 | 氧化钇薄膜的形成方法及系统 |
CN111710603A (zh) * | 2020-06-24 | 2020-09-25 | 中国科学院微电子研究所 | 一种刻蚀方法及系统 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10270427A (ja) * | 1997-03-27 | 1998-10-09 | Toshiba Corp | アルミニウム合金のパターニング方法およびパターニング装置 |
US6682999B1 (en) * | 1999-10-22 | 2004-01-27 | Agere Systems Inc. | Semiconductor device having multilevel interconnections and method of manufacture thereof |
JP3490669B2 (ja) * | 2000-07-18 | 2004-01-26 | 株式会社日立製作所 | 不揮発性材料のエッチング方法および装置 |
US6764898B1 (en) * | 2002-05-16 | 2004-07-20 | Advanced Micro Devices, Inc. | Implantation into high-K dielectric material after gate etch to facilitate removal |
JP2004165555A (ja) * | 2002-11-15 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4358556B2 (ja) * | 2003-05-30 | 2009-11-04 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7220635B2 (en) * | 2003-12-19 | 2007-05-22 | Intel Corporation | Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer |
JP2006054354A (ja) * | 2004-08-13 | 2006-02-23 | Nippon Telegr & Teleph Corp <Ntt> | 酸化物基板の表面処理方法 |
US20060068603A1 (en) * | 2004-09-30 | 2006-03-30 | Tokyo Electron Limited | A method for forming a thin complete high-permittivity dielectric layer |
US7701034B2 (en) * | 2005-01-21 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy patterns in integrated circuit fabrication |
US7504329B2 (en) * | 2005-05-11 | 2009-03-17 | Interuniversitair Microelektronica Centrum (Imec) | Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET |
US7432139B2 (en) * | 2005-06-29 | 2008-10-07 | Amberwave Systems Corp. | Methods for forming dielectrics and metal electrodes |
US7166485B1 (en) * | 2005-07-05 | 2007-01-23 | Sharp Laboratories Of America, Inc. | Superlattice nanocrystal Si-SiO2 electroluminescence device |
JP2007080995A (ja) * | 2005-09-13 | 2007-03-29 | Toshiba Corp | 半導体装置 |
JP2007123527A (ja) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体装置の製造方法 |
EP1780779A3 (en) * | 2005-10-28 | 2008-06-11 | Interuniversitair Microelektronica Centrum ( Imec) | A plasma for patterning advanced gate stacks |
JP2007161952A (ja) * | 2005-12-16 | 2007-06-28 | Konica Minolta Medical & Graphic Inc | 放射線画像変換パネルとその製造方法 |
US20080014689A1 (en) * | 2006-07-07 | 2008-01-17 | Texas Instruments Incorporated | Method for making planar nanowire surround gate mosfet |
US7745309B2 (en) * | 2006-08-09 | 2010-06-29 | Applied Materials, Inc. | Methods for surface activation by plasma immersion ion implantation process utilized in silicon-on-insulator structure |
US7820552B2 (en) * | 2007-03-13 | 2010-10-26 | International Business Machines Corporation | Advanced high-k gate stack patterning and structure containing a patterned high-k gate stack |
JP2008135765A (ja) * | 2007-12-21 | 2008-06-12 | Seiko Epson Corp | 半導体装置 |
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