JP4699719B2 - High−k物質を選択的に除去する方法 - Google Patents
High−k物質を選択的に除去する方法 Download PDFInfo
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- JP4699719B2 JP4699719B2 JP2004221896A JP2004221896A JP4699719B2 JP 4699719 B2 JP4699719 B2 JP 4699719B2 JP 2004221896 A JP2004221896 A JP 2004221896A JP 2004221896 A JP2004221896 A JP 2004221896A JP 4699719 B2 JP4699719 B2 JP 4699719B2
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- 239000000463 material Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 28
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 35
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 37
- 238000005530 etching Methods 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 150000007522 mineralic acids Chemical class 0.000 description 6
- 150000002894 organic compounds Chemical class 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000002798 polar solvent Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 201000011452 Adrenoleukodystrophy Diseases 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 208000010796 X-linked adrenoleukodystrophy Diseases 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Description
半導体基板の上にhigh−k物質を設けるステップと、
前記前記high−k物質をHF、有機化合物、及び有機酸を含む溶液にさらすステップと
を含むことを特徴とする。
成膜したままの、また、ダメージ付与され、且つ、熱処理したHFO2ベース層について熱酸化物に対する最高の選択性、すなわち無限大の選択性が得られる。
成膜したままのHfO2ベース層について、ポリシリコンに対して少なくとも14:1の選択性が得られる。
ダメージ付与され、熱処理されたHfO2ベース層について、ポリシリコンに対して少なくとも250:1の選択性が得られる。
ダメージ付与され、熱処理されたHfO2ベース層の場合、LPCVD Si3N4に対して少なくとも20:1の選択性が得られる.
HDP酸化物の場合には、少なくとも9:1の選択性が得られる。
DXZ酸化物の場合には、少なくとも5:1の選択性が得られる。
TEOSの場合には、少なくとも6:1の選択性が得られる。
TaN及びTiNの場合には、少なくとも100:1の選択性が得られる。
ダメージ付与され、熱処理されたHfO2ベース層の場合には、室温で5nm/minのエッチングレートが得られる。
2 絶縁構造体
3 ゲート・ポリシリコン
4 マスク
5 high−k物質層
Claims (10)
- 半導体基板の上に、HfO 2 からなるhigh−k物質を設けるステップと、
前記high−k物質を、フッ化水素、アルコール及び塩酸HClを含む溶液にさらすステップと
を含み、
前記フッ化水素HFの濃度は、0.005M〜0.1Mの範囲内であることを特徴とするhigh−k物質の選択的除去方法。 - 前記溶液中の前記塩酸HClの濃度は、50%未満であることを特徴とする請求項1に記載の方法。
- 前記溶液中の前記塩酸HClの濃度は、10%〜30%の範囲内であることを特徴とする請求項2に記載の方法。
- 前記アルコールは、エタノール、イソプロピルアルコール及びエチレングリコールの群から選ばれることを特徴とする請求項1に記載の方法。
- 前記アルコールの濃度は、50%を超えることを特徴とする請求項1から4のいずれか一項に記載の方法。
- 前記アルコールの濃度は、60%〜90%の範囲内にあることを特徴とする請求項5に記載の方法。
- 前記溶液の温度は、20℃〜80℃の範囲内にあることを特徴とする請求項1から6のいずれか一項に記載の方法。
- 前記溶液は、さらに界面活性剤を含むことを特徴とする請求項1から7のいずれか一項に記載の方法。
- 前記溶液は、pH−0.5〜pH2の範囲のpHを有することを特徴とする請求項1から8のいずれか一項に記載の方法。
- 前記high−k物質をダメージ付与ステップにさらすステップをさらに含み、
前記ダメージ付与ステップは、化学的ダメージ付与ステップ又は物理的ダメージ付与ステップを含むことを特徴とする請求項1に記載の方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49202003P | 2003-08-01 | 2003-08-01 | |
US60/492020 | 2003-08-01 | ||
EP04447059.9A EP1511074B1 (en) | 2003-08-01 | 2004-03-09 | A method for selective removal of high-K material |
EP04447059-9 | 2004-03-09 | ||
US10/797888 | 2004-03-09 | ||
US10/797,888 US7132370B2 (en) | 2003-08-01 | 2004-03-09 | Method for selective removal of high-k material |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005057276A JP2005057276A (ja) | 2005-03-03 |
JP4699719B2 true JP4699719B2 (ja) | 2011-06-15 |
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JP2004221896A Active JP4699719B2 (ja) | 2003-08-01 | 2004-07-29 | High−k物質を選択的に除去する方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005079311A (ja) * | 2003-08-29 | 2005-03-24 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
JP4580258B2 (ja) * | 2004-03-24 | 2010-11-10 | 東ソー株式会社 | エッチング用組成物及びエッチング処理方法 |
JP2006080353A (ja) * | 2004-09-10 | 2006-03-23 | Sharp Corp | 半導体装置の製造方法 |
JP4501669B2 (ja) * | 2004-12-15 | 2010-07-14 | 東ソー株式会社 | エッチング用組成物 |
JP2007036116A (ja) * | 2005-07-29 | 2007-02-08 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2007150118A (ja) * | 2005-11-30 | 2007-06-14 | Stella Chemifa Corp | 微細加工処理剤、及びそれを用いた微細加工処理方法 |
JP2012038816A (ja) * | 2010-08-04 | 2012-02-23 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
WO2024048269A1 (ja) * | 2022-08-29 | 2024-03-07 | 東京エレクトロン株式会社 | 基板処理方法、および基板処理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030104706A1 (en) * | 2001-12-04 | 2003-06-05 | Matsushita Electric Industrial Co., Ltd. | Wet-etching method and method for manufacturing semiconductor device |
US20030109106A1 (en) * | 2001-12-06 | 2003-06-12 | Pacheco Rotondaro Antonio Luis | Noval chemistry and method for the selective removal of high-k dielectrics |
JP2003332297A (ja) * | 2002-05-10 | 2003-11-21 | Daikin Ind Ltd | エッチング液及びエッチング方法 |
-
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- 2004-07-29 JP JP2004221896A patent/JP4699719B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030104706A1 (en) * | 2001-12-04 | 2003-06-05 | Matsushita Electric Industrial Co., Ltd. | Wet-etching method and method for manufacturing semiconductor device |
US20030109106A1 (en) * | 2001-12-06 | 2003-06-12 | Pacheco Rotondaro Antonio Luis | Noval chemistry and method for the selective removal of high-k dielectrics |
JP2003332297A (ja) * | 2002-05-10 | 2003-11-21 | Daikin Ind Ltd | エッチング液及びエッチング方法 |
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