TWI449132B - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
TWI449132B
TWI449132B TW099109213A TW99109213A TWI449132B TW I449132 B TWI449132 B TW I449132B TW 099109213 A TW099109213 A TW 099109213A TW 99109213 A TW99109213 A TW 99109213A TW I449132 B TWI449132 B TW I449132B
Authority
TW
Taiwan
Prior art keywords
film
insulating film
metal
region
channel type
Prior art date
Application number
TW099109213A
Other languages
English (en)
Chinese (zh)
Other versions
TW201044508A (en
Inventor
門島勝
坂下真介
川原孝昭
由上二郎
Original Assignee
瑞薩電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子股份有限公司 filed Critical 瑞薩電子股份有限公司
Publication of TW201044508A publication Critical patent/TW201044508A/zh
Application granted granted Critical
Publication of TWI449132B publication Critical patent/TWI449132B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW099109213A 2009-04-30 2010-03-26 Manufacturing method of semiconductor device TWI449132B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009110663A JP5329294B2 (ja) 2009-04-30 2009-04-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201044508A TW201044508A (en) 2010-12-16
TWI449132B true TWI449132B (zh) 2014-08-11

Family

ID=43030710

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099109213A TWI449132B (zh) 2009-04-30 2010-03-26 Manufacturing method of semiconductor device

Country Status (3)

Country Link
US (1) US8293632B2 (enExample)
JP (1) JP5329294B2 (enExample)
TW (1) TWI449132B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5268829B2 (ja) 2009-08-21 2013-08-21 パナソニック株式会社 半導体装置
JP2011100822A (ja) * 2009-11-05 2011-05-19 Hitachi High-Technologies Corp 半導体素子加工方法
JP5449026B2 (ja) * 2010-05-24 2014-03-19 パナソニック株式会社 半導体装置及びその製造方法
JP2012049227A (ja) * 2010-08-25 2012-03-08 Renesas Electronics Corp 半導体集積回路装置および半導体集積回路装置の製造方法
JP2012209331A (ja) * 2011-03-29 2012-10-25 Renesas Electronics Corp 半導体集積回路装置の製造方法
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
KR20130017664A (ko) * 2011-08-11 2013-02-20 삼성전자주식회사 금속 패턴 형성 방법 및 반도체 소자의 제조 방법
EP2717308A1 (en) 2012-10-08 2014-04-09 Imec A method for manufacturing a dual work function semiconductor device
US9190409B2 (en) 2013-02-25 2015-11-17 Renesas Electronics Corporation Replacement metal gate transistor with controlled threshold voltage
CN113809012B (zh) * 2020-06-12 2024-02-09 长鑫存储技术有限公司 半导体器件及其制造方法
CN114361018A (zh) * 2022-01-07 2022-04-15 长鑫存储技术有限公司 一种半导体结构的制备方法及半导体结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200731410A (en) * 2005-09-22 2007-08-16 Tokyo Electron Ltd Manufacturing method of semiconductor apparatus and surface processing method of SiN and SiO2 film
TW200746302A (en) * 1997-03-05 2007-12-16 Hitachi Ltd Method of making semiconductor IC device
TW200810110A (en) * 2006-05-15 2008-02-16 Toshiba Kk Semiconductor device and manufacturing method thereof

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JP3998665B2 (ja) * 2004-06-16 2007-10-31 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US7569466B2 (en) * 2005-12-16 2009-08-04 International Business Machines Corporation Dual metal gate self-aligned integration
JP2007234861A (ja) * 2006-03-01 2007-09-13 Renesas Technology Corp 半導体装置の製造方法
JP2007243009A (ja) * 2006-03-10 2007-09-20 Renesas Technology Corp 半導体装置およびその製造方法
JP4282691B2 (ja) * 2006-06-07 2009-06-24 株式会社東芝 半導体装置
TWI492367B (zh) * 2007-12-03 2015-07-11 瑞薩電子股份有限公司 Ｃｍｏｓ半導體裝置之製造方法
JP5288789B2 (ja) * 2007-12-28 2013-09-11 株式会社東芝 半導体装置及びその製造方法
JP2009194352A (ja) * 2008-01-17 2009-08-27 Toshiba Corp 半導体装置の製造方法
JP2009283770A (ja) * 2008-05-23 2009-12-03 Renesas Technology Corp 半導体装置の製造方法
US7994036B2 (en) * 2008-07-01 2011-08-09 Panasonic Corporation Semiconductor device and fabrication method for the same
JP5314964B2 (ja) * 2008-08-13 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2010103130A (ja) * 2008-10-21 2010-05-06 Panasonic Corp 半導体装置及びその製造方法
JP2010177265A (ja) * 2009-01-27 2010-08-12 Fujitsu Semiconductor Ltd 半導体装置の製造方法
JP2010238685A (ja) * 2009-03-30 2010-10-21 Fujitsu Semiconductor Ltd 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200746302A (en) * 1997-03-05 2007-12-16 Hitachi Ltd Method of making semiconductor IC device
TW200731410A (en) * 2005-09-22 2007-08-16 Tokyo Electron Ltd Manufacturing method of semiconductor apparatus and surface processing method of SiN and SiO2 film
TW200810110A (en) * 2006-05-15 2008-02-16 Toshiba Kk Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
US20100279496A1 (en) 2010-11-04
TW201044508A (en) 2010-12-16
JP2010262977A (ja) 2010-11-18
JP5329294B2 (ja) 2013-10-30
US8293632B2 (en) 2012-10-23

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