TWI449132B - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- TWI449132B TWI449132B TW099109213A TW99109213A TWI449132B TW I449132 B TWI449132 B TW I449132B TW 099109213 A TW099109213 A TW 099109213A TW 99109213 A TW99109213 A TW 99109213A TW I449132 B TWI449132 B TW I449132B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- insulating film
- metal
- region
- channel type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 202
- 238000004519 manufacturing process Methods 0.000 title claims description 108
- 229910052751 metal Inorganic materials 0.000 claims description 339
- 239000002184 metal Substances 0.000 claims description 339
- 150000004767 nitrides Chemical class 0.000 claims description 102
- 238000010438 heat treatment Methods 0.000 claims description 71
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 67
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 56
- 238000005530 etching Methods 0.000 claims description 48
- 239000007788 liquid Substances 0.000 claims description 47
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 35
- 229910052707 ruthenium Inorganic materials 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 31
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 29
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical group O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 29
- 239000010936 titanium Substances 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 229910052715 tantalum Inorganic materials 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 11
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 5
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 4
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 description 925
- 239000010410 layer Substances 0.000 description 239
- 230000015572 biosynthetic process Effects 0.000 description 186
- 229920002120 photoresistant polymer Polymers 0.000 description 72
- 238000001039 wet etching Methods 0.000 description 48
- 239000012535 impurity Substances 0.000 description 20
- 238000005468 ion implantation Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000011810 insulating material Substances 0.000 description 14
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 229910052735 hafnium Inorganic materials 0.000 description 10
- 230000004913 activation Effects 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 230000005669 field effect Effects 0.000 description 8
- 229910052727 yttrium Inorganic materials 0.000 description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 8
- 230000002411 adverse Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 7
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 7
- 229910001936 tantalum oxide Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910004143 HfON Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910004129 HfSiO Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- -1 hafnium nitride Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical group [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000003785 decidua Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0181—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009110663A JP5329294B2 (ja) | 2009-04-30 | 2009-04-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201044508A TW201044508A (en) | 2010-12-16 |
| TWI449132B true TWI449132B (zh) | 2014-08-11 |
Family
ID=43030710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099109213A TWI449132B (zh) | 2009-04-30 | 2010-03-26 | Manufacturing method of semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8293632B2 (enExample) |
| JP (1) | JP5329294B2 (enExample) |
| TW (1) | TWI449132B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5268829B2 (ja) * | 2009-08-21 | 2013-08-21 | パナソニック株式会社 | 半導体装置 |
| JP2011100822A (ja) * | 2009-11-05 | 2011-05-19 | Hitachi High-Technologies Corp | 半導体素子加工方法 |
| JP5449026B2 (ja) * | 2010-05-24 | 2014-03-19 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| JP2012049227A (ja) * | 2010-08-25 | 2012-03-08 | Renesas Electronics Corp | 半導体集積回路装置および半導体集積回路装置の製造方法 |
| JP2012209331A (ja) * | 2011-03-29 | 2012-10-25 | Renesas Electronics Corp | 半導体集積回路装置の製造方法 |
| US8735987B1 (en) | 2011-06-06 | 2014-05-27 | Suvolta, Inc. | CMOS gate stack structures and processes |
| KR20130017664A (ko) * | 2011-08-11 | 2013-02-20 | 삼성전자주식회사 | 금속 패턴 형성 방법 및 반도체 소자의 제조 방법 |
| EP2717308A1 (en) * | 2012-10-08 | 2014-04-09 | Imec | A method for manufacturing a dual work function semiconductor device |
| US9190409B2 (en) | 2013-02-25 | 2015-11-17 | Renesas Electronics Corporation | Replacement metal gate transistor with controlled threshold voltage |
| CN113809012B (zh) | 2020-06-12 | 2024-02-09 | 长鑫存储技术有限公司 | 半导体器件及其制造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200731410A (en) * | 2005-09-22 | 2007-08-16 | Tokyo Electron Ltd | Manufacturing method of semiconductor apparatus and surface processing method of SiN and SiO2 film |
| TW200746302A (en) * | 1997-03-05 | 2007-12-16 | Hitachi Ltd | Method of making semiconductor IC device |
| TW200810110A (en) * | 2006-05-15 | 2008-02-16 | Toshiba Kk | Semiconductor device and manufacturing method thereof |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3998665B2 (ja) * | 2004-06-16 | 2007-10-31 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| US7569466B2 (en) * | 2005-12-16 | 2009-08-04 | International Business Machines Corporation | Dual metal gate self-aligned integration |
| JP2007234861A (ja) * | 2006-03-01 | 2007-09-13 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2007243009A (ja) * | 2006-03-10 | 2007-09-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP4282691B2 (ja) * | 2006-06-07 | 2009-06-24 | 株式会社東芝 | 半導体装置 |
| TWI492367B (zh) * | 2007-12-03 | 2015-07-11 | Renesas Electronics Corp | Ｃｍｏｓ半導體裝置之製造方法 |
| JP5288789B2 (ja) * | 2007-12-28 | 2013-09-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2009194352A (ja) * | 2008-01-17 | 2009-08-27 | Toshiba Corp | 半導体装置の製造方法 |
| JP2009283770A (ja) * | 2008-05-23 | 2009-12-03 | Renesas Technology Corp | 半導体装置の製造方法 |
| US7994036B2 (en) * | 2008-07-01 | 2011-08-09 | Panasonic Corporation | Semiconductor device and fabrication method for the same |
| JP5314964B2 (ja) * | 2008-08-13 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2010103130A (ja) * | 2008-10-21 | 2010-05-06 | Panasonic Corp | 半導体装置及びその製造方法 |
| JP2010177265A (ja) * | 2009-01-27 | 2010-08-12 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| JP2010238685A (ja) * | 2009-03-30 | 2010-10-21 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
-
2009
- 2009-04-30 JP JP2009110663A patent/JP5329294B2/ja not_active Expired - Fee Related
-
2010
- 2010-03-26 TW TW099109213A patent/TWI449132B/zh not_active IP Right Cessation
- 2010-04-06 US US12/755,058 patent/US8293632B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200746302A (en) * | 1997-03-05 | 2007-12-16 | Hitachi Ltd | Method of making semiconductor IC device |
| TW200731410A (en) * | 2005-09-22 | 2007-08-16 | Tokyo Electron Ltd | Manufacturing method of semiconductor apparatus and surface processing method of SiN and SiO2 film |
| TW200810110A (en) * | 2006-05-15 | 2008-02-16 | Toshiba Kk | Semiconductor device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010262977A (ja) | 2010-11-18 |
| US20100279496A1 (en) | 2010-11-04 |
| TW201044508A (en) | 2010-12-16 |
| US8293632B2 (en) | 2012-10-23 |
| JP5329294B2 (ja) | 2013-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |