JP2013102204A5 - - Google Patents

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Publication number
JP2013102204A5
JP2013102204A5 JP2013009850A JP2013009850A JP2013102204A5 JP 2013102204 A5 JP2013102204 A5 JP 2013102204A5 JP 2013009850 A JP2013009850 A JP 2013009850A JP 2013009850 A JP2013009850 A JP 2013009850A JP 2013102204 A5 JP2013102204 A5 JP 2013102204A5
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JP
Japan
Prior art keywords
electrode layer
layer
organic compound
tin
semiconductor device
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Application number
JP2013009850A
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English (en)
Japanese (ja)
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JP5809651B2 (ja
JP2013102204A (ja
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Priority to JP2013009850A priority Critical patent/JP5809651B2/ja
Priority claimed from JP2013009850A external-priority patent/JP5809651B2/ja
Publication of JP2013102204A publication Critical patent/JP2013102204A/ja
Publication of JP2013102204A5 publication Critical patent/JP2013102204A5/ja
Application granted granted Critical
Publication of JP5809651B2 publication Critical patent/JP5809651B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013009850A 2006-11-29 2013-01-23 半導体装置 Expired - Fee Related JP5809651B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013009850A JP5809651B2 (ja) 2006-11-29 2013-01-23 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006321032 2006-11-29
JP2006321032 2006-11-29
JP2013009850A JP5809651B2 (ja) 2006-11-29 2013-01-23 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007307170A Division JP5259160B2 (ja) 2006-11-29 2007-11-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2013102204A JP2013102204A (ja) 2013-05-23
JP2013102204A5 true JP2013102204A5 (enExample) 2013-09-26
JP5809651B2 JP5809651B2 (ja) 2015-11-11

Family

ID=39467881

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007307170A Expired - Fee Related JP5259160B2 (ja) 2006-11-29 2007-11-28 半導体装置の作製方法
JP2013009850A Expired - Fee Related JP5809651B2 (ja) 2006-11-29 2013-01-23 半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2007307170A Expired - Fee Related JP5259160B2 (ja) 2006-11-29 2007-11-28 半導体装置の作製方法

Country Status (6)

Country Link
US (1) US7712676B2 (enExample)
EP (1) EP2084745A4 (enExample)
JP (2) JP5259160B2 (enExample)
CN (1) CN101529596B (enExample)
TW (1) TWI446529B (enExample)
WO (1) WO2008066091A1 (enExample)

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Publication number Priority date Publication date Assignee Title
EP1946374A4 (en) * 2005-11-09 2014-01-01 Semiconductor Energy Lab SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
JP5121432B2 (ja) * 2007-12-11 2013-01-16 キヤノン株式会社 液晶表示装置及びその製造方法並びに液晶プロジェクション装置
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
US8853664B2 (en) * 2009-07-28 2014-10-07 Sharp Kabushiki Kaisha Organic element and organic device including the same
WO2011063103A1 (en) * 2009-11-18 2011-05-26 The Trustees Of Princeton University Semiconductor coated microporous graphene scaffolds
TWI429090B (zh) * 2010-05-21 2014-03-01 國立成功大學 Crystal element and manufacturing method thereof
JP2011249556A (ja) * 2010-05-27 2011-12-08 Panasonic Corp 半導体レーザ装置及びその製造方法
KR20120042151A (ko) * 2010-10-22 2012-05-03 삼성모바일디스플레이주식회사 플렉서블 디스플레이 장치의 제조 방법
JP5856827B2 (ja) * 2010-12-09 2016-02-10 株式会社半導体エネルギー研究所 半導体装置
JP5621690B2 (ja) * 2011-03-31 2014-11-12 富士通株式会社 電子装置及びフレキシブル基板
US9001564B2 (en) 2011-06-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for driving the same
WO2014165225A1 (en) * 2013-03-12 2014-10-09 New Jersey Institute Of Technology System and method for thin film photovoltaic modules and back contact for thin film solar cells
TWI695525B (zh) * 2014-07-25 2020-06-01 日商半導體能源研究所股份有限公司 剝離方法、發光裝置、模組以及電子裝置
JP2016224297A (ja) * 2015-06-01 2016-12-28 株式会社ジャパンディスプレイ 表示装置
US10374093B2 (en) 2016-12-08 2019-08-06 Electronics And Telecommunications Research Institute Method of fabricating a flexible substrate and the flexible substrate fabricated thereby
TWI678772B (zh) * 2017-04-28 2019-12-01 矽品精密工業股份有限公司 電子封裝件及其製法
JP7351335B2 (ja) * 2019-04-25 2023-09-27 株式会社レゾナック ドルメン構造を有する半導体装置及びその製造方法、支持片の製造方法、並びに、支持片形成用積層フィルム
JP7665512B2 (ja) * 2019-05-10 2025-04-21 株式会社半導体エネルギー研究所 半導体装置

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JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP3116085B2 (ja) 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
JP4632628B2 (ja) * 2000-09-07 2011-02-16 出光興産株式会社 有機電界発光素子
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004002929A (ja) * 2001-08-03 2004-01-08 Furuya Kinzoku:Kk 銀合金、スパッタリングターゲット、反射型ｌｃｄ用反射板、反射配線電極、薄膜、その製造方法、光学記録媒体、電磁波遮蔽体、電子部品用金属材料、配線材料、電子部品、電子機器、金属膜の加工方法、電子光学部品、積層体及び建材ガラス
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JP4954537B2 (ja) * 2004-12-03 2012-06-20 株式会社半導体エネルギー研究所 半導体装置
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WO2006085633A1 (en) * 2005-02-10 2006-08-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device
TWI243460B (en) * 2005-02-16 2005-11-11 Ind Tech Res Inst Organic semiconductor device with multi-protective layers and the making method
JP5008323B2 (ja) * 2005-03-28 2012-08-22 株式会社半導体エネルギー研究所 メモリ装置
US8030643B2 (en) 2005-03-28 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
JP4918994B2 (ja) * 2005-05-30 2012-04-18 住友電気工業株式会社 金属被膜の形成方法および金属配線
EP1946374A4 (en) 2005-11-09 2014-01-01 Semiconductor Energy Lab SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

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