JP2014220492A5 - - Google Patents
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- Publication number
- JP2014220492A5 JP2014220492A5 JP2014079306A JP2014079306A JP2014220492A5 JP 2014220492 A5 JP2014220492 A5 JP 2014220492A5 JP 2014079306 A JP2014079306 A JP 2014079306A JP 2014079306 A JP2014079306 A JP 2014079306A JP 2014220492 A5 JP2014220492 A5 JP 2014220492A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- electrode
- gate
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010410 layer Substances 0.000 claims 39
- 239000004065 semiconductor Substances 0.000 claims 27
- 239000011229 interlayer Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014079306A JP2014220492A (ja) | 2013-04-10 | 2014-04-08 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013081882 | 2013-04-10 | ||
| JP2013081882 | 2013-04-10 | ||
| JP2014079306A JP2014220492A (ja) | 2013-04-10 | 2014-04-08 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014220492A JP2014220492A (ja) | 2014-11-20 |
| JP2014220492A5 true JP2014220492A5 (enExample) | 2017-05-18 |
Family
ID=51686184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014079306A Withdrawn JP2014220492A (ja) | 2013-04-10 | 2014-04-08 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20140306219A1 (enExample) |
| JP (1) | JP2014220492A (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9153650B2 (en) | 2013-03-19 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor |
| TWI652822B (zh) * | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體膜及其形成方法 |
| JP6400961B2 (ja) | 2013-07-12 | 2018-10-03 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TWI608523B (zh) | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
| KR102244553B1 (ko) | 2013-08-23 | 2021-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자 및 반도체 장치 |
| JP2015179247A (ja) | 2013-10-22 | 2015-10-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102317297B1 (ko) | 2014-02-19 | 2021-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물, 반도체 장치, 모듈, 및 전자 장치 |
| KR101562932B1 (ko) * | 2014-11-28 | 2015-10-26 | 연세대학교 산학협력단 | 산화물 반도체 소자 및 이의 제조 방법 |
| US10192957B2 (en) | 2014-12-16 | 2019-01-29 | Lg Display Co., Ltd. | Thin-film transistor array substrate |
| KR102342694B1 (ko) * | 2015-02-17 | 2021-12-23 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| KR102334360B1 (ko) * | 2015-04-09 | 2021-12-01 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| KR102354972B1 (ko) * | 2015-06-01 | 2022-01-25 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| US9852926B2 (en) | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
| US10333004B2 (en) | 2016-03-18 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module and electronic device |
| CN109661701A (zh) | 2016-09-01 | 2019-04-19 | 夏普株式会社 | 有源矩阵基板和显示装置 |
| CN110268529A (zh) | 2017-02-16 | 2019-09-20 | 三菱电机株式会社 | 薄膜晶体管、薄膜晶体管基板、液晶显示装置以及薄膜晶体管基板的制造方法 |
| KR102447148B1 (ko) | 2017-03-13 | 2022-09-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| KR102315554B1 (ko) | 2019-04-09 | 2021-10-21 | 한양대학교 산학협력단 | 수소 확산 방지막을 포함하는 표시 장치 및 그 제조 방법 |
| GB2610886B (en) * | 2019-08-21 | 2023-09-13 | Pragmatic Printing Ltd | Resistor geometry |
| GB2587793B (en) * | 2019-08-21 | 2023-03-22 | Pragmatic Printing Ltd | Electronic circuit comprising transistor and resistor |
| EP4160697A4 (en) * | 2020-12-01 | 2023-10-11 | BOE Technology Group Co., Ltd. | Oxide thin film transistor and preparation method therefor, and display device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8174053B2 (en) * | 2006-09-08 | 2012-05-08 | Sharp Kabushiki Kaisha | Semiconductor device, production method thereof, and electronic device |
| US8106400B2 (en) * | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| EP2202802B1 (en) * | 2008-12-24 | 2012-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| KR101082174B1 (ko) * | 2009-11-27 | 2011-11-09 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
| KR20190100462A (ko) * | 2009-11-28 | 2019-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| TWI635613B (zh) * | 2013-04-03 | 2018-09-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
-
2014
- 2014-04-07 US US14/246,418 patent/US20140306219A1/en not_active Abandoned
- 2014-04-08 JP JP2014079306A patent/JP2014220492A/ja not_active Withdrawn