JP2014220492A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2014220492A
JP2014220492A JP2014079306A JP2014079306A JP2014220492A JP 2014220492 A JP2014220492 A JP 2014220492A JP 2014079306 A JP2014079306 A JP 2014079306A JP 2014079306 A JP2014079306 A JP 2014079306A JP 2014220492 A JP2014220492 A JP 2014220492A
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Japan
Prior art keywords
oxide semiconductor
semiconductor layer
film
transistor
layer
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Japanese (ja)
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JP2014220492A5 (enExample
Inventor
山崎　舜平
Shunpei Yamazaki
舜平 山崎
岡崎　健一
Kenichi Okazaki
健一 岡崎
片山　雅博
Masahiro Katayama
雅博 片山
貴士 羽持
Takashi Hamochi
貴士 羽持
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2014079306A priority Critical patent/JP2014220492A/ja
Publication of JP2014220492A publication Critical patent/JP2014220492A/ja
Publication of JP2014220492A5 publication Critical patent/JP2014220492A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2014079306A 2013-04-10 2014-04-08 半導体装置 Withdrawn JP2014220492A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014079306A JP2014220492A (ja) 2013-04-10 2014-04-08 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013081882 2013-04-10
JP2013081882 2013-04-10
JP2014079306A JP2014220492A (ja) 2013-04-10 2014-04-08 半導体装置

Publications (2)

Publication Number Publication Date
JP2014220492A true JP2014220492A (ja) 2014-11-20
JP2014220492A5 JP2014220492A5 (enExample) 2017-05-18

Family

ID=51686184

Family Applications (1)

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JP2014079306A Withdrawn JP2014220492A (ja) 2013-04-10 2014-04-08 半導体装置

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US (1) US20140306219A1 (enExample)
JP (1) JP2014220492A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017531322A (ja) * 2014-12-16 2017-10-19 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタアレイ基板
WO2018043424A1 (ja) * 2016-09-01 2018-03-08 シャープ株式会社 アクティブマトリクス基板および表示装置
US10741690B2 (en) 2017-02-16 2020-08-11 Mitsubishi Electric Corporation Thin film transistor, thin film transistor substrate, and liquid crystal display device
WO2020209535A1 (ko) * 2019-04-09 2020-10-15 한양대학교 산학협력단 수소 확산 방지막을 포함하는 표시 장치 및 그 제조 방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
TWI652822B (zh) * 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 氧化物半導體膜及其形成方法
JP6400961B2 (ja) 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 表示装置
TWI608523B (zh) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
KR102244553B1 (ko) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 용량 소자 및 반도체 장치
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
KR102317297B1 (ko) 2014-02-19 2021-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물, 반도체 장치, 모듈, 및 전자 장치
KR101562932B1 (ko) * 2014-11-28 2015-10-26 연세대학교 산학협력단 산화물 반도체 소자 및 이의 제조 방법
KR102342694B1 (ko) * 2015-02-17 2021-12-23 삼성디스플레이 주식회사 액정 표시 장치
KR102334360B1 (ko) * 2015-04-09 2021-12-01 삼성디스플레이 주식회사 액정 표시 장치
KR102354972B1 (ko) * 2015-06-01 2022-01-25 삼성디스플레이 주식회사 액정 표시 장치
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
US10333004B2 (en) 2016-03-18 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module and electronic device
CN118102714A (zh) 2017-03-13 2024-05-28 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
GB2587793B (en) * 2019-08-21 2023-03-22 Pragmatic Printing Ltd Electronic circuit comprising transistor and resistor
GB2610886B (en) 2019-08-21 2023-09-13 Pragmatic Printing Ltd Resistor geometry
US12261225B2 (en) * 2020-12-01 2025-03-25 Fuzhou Boe Optoelectronics Technology Co., Ltd. Oxide thin film transistor, method for preparing same, and display apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008029544A1 (fr) * 2006-09-08 2008-03-13 Sharp Kabushiki Kaisha Composant à semiconducteur, son procédé de fabrication et composant électronique
JP2010171394A (ja) * 2008-12-24 2010-08-05 Semiconductor Energy Lab Co Ltd 論理回路及び半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8106400B2 (en) * 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101082174B1 (ko) * 2009-11-27 2011-11-09 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
WO2011065243A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI635613B (zh) * 2013-04-03 2018-09-11 半導體能源研究所股份有限公司 半導體裝置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008029544A1 (fr) * 2006-09-08 2008-03-13 Sharp Kabushiki Kaisha Composant à semiconducteur, son procédé de fabrication et composant électronique
JP2010171394A (ja) * 2008-12-24 2010-08-05 Semiconductor Energy Lab Co Ltd 論理回路及び半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017531322A (ja) * 2014-12-16 2017-10-19 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタアレイ基板
US10192957B2 (en) 2014-12-16 2019-01-29 Lg Display Co., Ltd. Thin-film transistor array substrate
US10692975B2 (en) 2014-12-16 2020-06-23 Lg Display Co., Ltd. Thin-film transistor array substrate
WO2018043424A1 (ja) * 2016-09-01 2018-03-08 シャープ株式会社 アクティブマトリクス基板および表示装置
US10942409B2 (en) 2016-09-01 2021-03-09 Sharp Kabushiki Kaisha Active-matrix substrate and display device
US10741690B2 (en) 2017-02-16 2020-08-11 Mitsubishi Electric Corporation Thin film transistor, thin film transistor substrate, and liquid crystal display device
WO2020209535A1 (ko) * 2019-04-09 2020-10-15 한양대학교 산학협력단 수소 확산 방지막을 포함하는 표시 장치 및 그 제조 방법
US12009372B2 (en) 2019-04-09 2024-06-11 Isac Research Inc. Display device including hydrogen diffusion barrier film, and method for manufacturing same

Also Published As

Publication number Publication date
US20140306219A1 (en) 2014-10-16

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