JP2016537292A5 - - Google Patents
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- Publication number
- JP2016537292A5 JP2016537292A5 JP2016543267A JP2016543267A JP2016537292A5 JP 2016537292 A5 JP2016537292 A5 JP 2016537292A5 JP 2016543267 A JP2016543267 A JP 2016543267A JP 2016543267 A JP2016543267 A JP 2016543267A JP 2016537292 A5 JP2016537292 A5 JP 2016537292A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- heating
- sic
- nickel
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 55
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 52
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 49
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 28
- 229910021389 graphene Inorganic materials 0.000 claims description 21
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 5
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 description 7
- 239000010408 film Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2013903547A AU2013903547A0 (en) | 2013-09-16 | Process for forming graphene layers on silicon carbide | |
| AU2013903547 | 2013-09-16 | ||
| AU2014902792 | 2014-07-18 | ||
| AU2014902792A AU2014902792A0 (en) | 2014-07-18 | Process for forming graphene layers on silicon carbide | |
| PCT/AU2014/050218 WO2015035465A1 (en) | 2013-09-16 | 2014-09-08 | Process for forming graphene layers on silicon carbide |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016537292A JP2016537292A (ja) | 2016-12-01 |
| JP2016537292A5 true JP2016537292A5 (enExample) | 2019-02-14 |
| JP6680678B2 JP6680678B2 (ja) | 2020-04-15 |
Family
ID=52664840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016543267A Expired - Fee Related JP6680678B2 (ja) | 2013-09-16 | 2014-09-08 | シリコンカーバイド上のグラフェン層の形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9771665B2 (enExample) |
| EP (1) | EP3046872A4 (enExample) |
| JP (1) | JP6680678B2 (enExample) |
| KR (1) | KR20160070073A (enExample) |
| CN (1) | CN105745173B (enExample) |
| WO (1) | WO2015035465A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180044840A (ko) * | 2015-03-06 | 2018-05-03 | 유니버서티 오브 테크놀러지 시드니 | 방법, 구조 및 슈퍼커패시터 |
| JP6426636B2 (ja) * | 2016-02-10 | 2018-11-21 | 日本電信電話株式会社 | センサ |
| CN106517165B (zh) * | 2016-11-07 | 2018-06-05 | 山东大学 | 一种在6H/4H-SiC硅面上用金属辅助内外碳源结合方式生长石墨烯的方法 |
| TWI607966B (zh) * | 2016-12-22 | 2017-12-11 | 國家中山科學研究院 | 不同相之石墨結構製作方法 |
| CN106946244B (zh) * | 2017-03-22 | 2019-03-29 | 西京学院 | 一种基于无电镀铜SiC颗粒制备石墨烯和碳纳米管混合物的方法 |
| KR101944385B1 (ko) * | 2017-09-14 | 2019-02-01 | 김동호 | 메커니컬 실 |
| CN108101028A (zh) * | 2017-09-18 | 2018-06-01 | 山东大学 | 一种在6H/4H-SiC硅面上利用复合金属辅助生长石墨烯的方法 |
| MY188501A (en) * | 2018-12-26 | 2021-12-16 | Mimos Berhad | Method of forming graphene bump structure |
| CN109742379A (zh) * | 2019-01-28 | 2019-05-10 | 哈工大机器人（岳阳）军民融合研究院 | 一种在Si/C复合材料上生长石墨烯的方法、利用该方法制得的材料以及其应用 |
| CN111747372B (zh) * | 2019-03-26 | 2024-06-14 | 深圳清力技术有限公司 | 一种无边缘凸起的金属盖石墨岛及其制备方法 |
| CN110124526B (zh) * | 2019-04-30 | 2022-06-28 | 湖北工业大学 | 一种碳化硅无机陶瓷膜的生产方法 |
| WO2022087681A1 (en) * | 2020-10-30 | 2022-05-05 | University Of Technology Sydney | Graphene based electrode for electrophysiological readings |
| CN115465856B (zh) * | 2021-06-10 | 2024-07-19 | 中国科学院上海微系统与信息技术研究所 | 图形化石墨烯的制备方法 |
| CN113604100B (zh) * | 2021-07-30 | 2022-12-20 | 雷索新材料(苏州)有限公司 | 一种石墨烯/铜/微米颗粒复合材料及其制备方法、石墨烯高温发热油墨及应用 |
| TWI780901B (zh) * | 2021-09-09 | 2022-10-11 | 合晶科技股份有限公司 | 複合基板及其製造方法 |
| CN114314569B (zh) * | 2022-01-10 | 2024-01-09 | 厦门大学 | 一种在基体上形成石墨烯的方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101622306B1 (ko) * | 2009-10-29 | 2016-05-19 | 삼성전자주식회사 | 그라펜 시트, 이를 포함하는 그라펜 기재 및 그의 제조방법 |
| KR101344493B1 (ko) * | 2007-12-17 | 2013-12-24 | 삼성전자주식회사 | 단결정 그라펜 시트 및 그의 제조방법 |
| US20120161098A1 (en) * | 2009-08-20 | 2012-06-28 | Nec Corporation | Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element |
| KR101636442B1 (ko) * | 2009-11-10 | 2016-07-21 | 삼성전자주식회사 | 촉매합금을 이용한 그라핀의 제조방법 |
| KR101156355B1 (ko) * | 2009-12-07 | 2012-06-13 | 서울대학교산학협력단 | 탄소가 용해된 실리콘 박막을 이용한 그래핀 제조방법 |
| KR101132706B1 (ko) * | 2010-02-01 | 2012-04-06 | 한국과학기술원 | 그래핀 층 형성 방법 |
| CN101834206B (zh) * | 2010-04-12 | 2012-10-10 | 清华大学 | 半导体器件结构及其形成方法 |
| JP2012025004A (ja) * | 2010-07-22 | 2012-02-09 | Seiko Epson Corp | グラフェンシート付き基材及びグラフェンシートの製造方法 |
| FR2982281B1 (fr) * | 2011-11-07 | 2014-03-07 | Commissariat Energie Atomique | Procede de synthese d'un feuillet de graphene sur un siliciure de platine, structures obtenues par ce procede et leurs utilisations |
| TWI448427B (zh) * | 2012-02-08 | 2014-08-11 | Nat Univ Tsing Hua | 利用低頻電磁波製備石墨烯之方法 |
| US9117667B2 (en) * | 2012-07-11 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Carbon layer and method of manufacture |
| KR102059129B1 (ko) * | 2012-11-21 | 2019-12-24 | 삼성전자주식회사 | 그래핀의 제조 방법 및 이를 포함하는 그래핀 적용 소자 |
| KR101425376B1 (ko) * | 2013-02-12 | 2014-08-01 | 한국과학기술연구원 | 고분자 기반의 대면적 탄소 나노그물 및 그 제조방법 |
| WO2014131043A1 (en) * | 2013-02-25 | 2014-08-28 | Solan, LLC | Methods for fabricating graphite-based structures and devices made therefrom |
-
2014
- 2014-09-08 JP JP2016543267A patent/JP6680678B2/ja not_active Expired - Fee Related
- 2014-09-08 US US15/022,532 patent/US9771665B2/en not_active Expired - Fee Related
- 2014-09-08 KR KR1020167009705A patent/KR20160070073A/ko not_active Abandoned
- 2014-09-08 WO PCT/AU2014/050218 patent/WO2015035465A1/en not_active Ceased
- 2014-09-08 CN CN201480056975.4A patent/CN105745173B/zh not_active Expired - Fee Related
- 2014-09-08 EP EP14843830.2A patent/EP3046872A4/en not_active Withdrawn
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